Patents by Inventor Huangxuan GONG

Huangxuan GONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11689095
    Abstract: A gate drive control circuit is provided that charges a gate voltage of a power switch transistor during a power switch transistor on-time period. During a first portion of the on-time period, the gate drive control circuit charges the gate voltage through a relatively-low resistance. During a second portion of the on-time period, the gate drive control circuit charges the gate voltage through a relatively-high resistance. Finally, during a third portion of the on-time period, the gate drive control circuit charges the gate voltage through another relatively-low resistance.
    Type: Grant
    Filed: January 8, 2021
    Date of Patent: June 27, 2023
    Assignee: Dialog Semiconductor Inc.
    Inventors: Wenduo Liu, Huangxuan Gong, Vijay Kanagala, Hien Bui
  • Publication number: 20220224217
    Abstract: A gate drive control circuit is provided that charges a gate voltage of a power switch transistor during a power switch transistor on-time period. During a first portion of the on-time period, the gate drive control circuit charges the gate voltage through a relatively-low resistance. During a second portion of the on-time period, the gate drive control circuit charges the gate voltage through a relatively-high resistance. Finally, during a third portion of the on-time period, the gate drive control circuit charges the gate voltage through another relatively-low resistance.
    Type: Application
    Filed: January 8, 2021
    Publication date: July 14, 2022
    Inventors: Wenduo LIU, Huangxuan GONG, Vijay KANAGALA, Hien BUI