Abstract: A method for writing and reading data in memory cells, comprising, when writing a data in a block of a first memory zone, a step consisting of writing in a second memory zone a temporary information structure metadata comprising a start flag, an identifier of the temporary information structure, an information about the location of the block in the first memory zone, and a final flag, and, after a power on of the first memory zone, searching for an anomaly in temporary information structures present in the second memory zone.

Abstract: A method for writing and reading data in memory cells, comprising, when writing a data in a block of a first memory zone, a step consisting of writing in a second memory zone a temporary information structure metadata comprising a start flag, an identifier of the temporary information structure, an information about the location of the block in the first memory zone, and a final flag, and, after a power on of the first memory zone, searching for an anomaly in temporary information structures present in the second memory zone.

Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

Abstract: A method for writing and reading data in memory cells, comprising, when writing a data in a block of a first memory zone, a step consisting of writing in a second memory zone a temporary information structure metadata comprising a start flag, an identifier of the temporary information structure, an information about the location of the block in the first memory zone, and a final flag, and, after a power on of the first memory zone, searching for an anomaly in temporary information structures present in the second memory zone.

Abstract: A method for writing and reading data in memory cells, comprises the steps of: defining a virtual memory, defining write commands and read commands of data (DT) in the virtual memory, providing a first nonvolatile physical memory zone (A1), providing a second nonvolatile physical memory zone (A2), and, in response to a write command of an initial data, searching for a first erased location in the first memory zone, writing the initial data (DT1a) in the first location (PB1(DPP0)), and writing, in the metadata (DSC0) an information (DS(PB1)) allowing the first location to be found and an information (LPA, DS(PB1)) forming a link between the first location and the location of the data in the virtual memory.

Abstract: An example method for writing and reading data in electrically erasable and programmable nonvolatile memory (EEPROM) cells may include writing, in erased blocks of a first memory zone, data each having a logical address defined in relation to a virtual memory; writing, in a second memory zone, metadata structures associated with the data present in the first memory zone, configuring, in a volatile memory zone, for each logical address of a data stored in the first memory zone, addresses of metadata structures comprising the logical address, reading the look-up table and then reading metadata structures that the look-up table designates, to find, from the logical address of a data, an address in the first memory zone of a block containing a valid data having the logical address.

Abstract: A system and method of making a firmware self updatable depending on option information stored in a configuration module. The configuration module can either be in a memory device or a memory controller. The self-updation flexibility can be achieved by customizing the options as per the customer's requirements and can be done either through an USB interface or by pre-programming the configuration module or any other communication or programming options. The option information is provided by using a configurable module inside either the memory or the memory controller. After the basic initialization operations, the firmware reads the option information from the controller itself or any other non-volatile memory and performs the tasks to enhance the overall performance.

Abstract: A methodology for efficiently copying data is presented. An internal controller RAM is multiplexed between storing existing RAM data such as look up table data) and storing copy back data with respect to a flash memory. The data in the controller RAM is temporarily stored in a free space of the flash memory. The data of the flash memory, which is to be copied, is read from a source page and is stored in the free space of the controller RAM, and from there, the data is written to a destination block of the flash memory. After completion of the copy back operation, the data of the controller RAM that was moved to the free space is retrieved for storage back in the controller RAM.

Abstract: A method for writing and reading data in memory cells, comprising, when writing a data in a block of a first memory zone, a step consisting of writing in a second memory zone a temporary information structure metadata comprising a start flag, an identifier of the temporary information structure, an information about the location of the block in the first memory zone, and a final flag, and, after a power on of the first memory zone, searching for an anomaly in temporary information structures present in the second memory zone.

Abstract: A method for writing and reading data memory cells, comprising: defining in a first memory zone erasable data pages and programmable data blocks; and, in response to write commands of data, writing data in erased blocks of the first memory zone, and writing, in a second memory zone, metadata structures associated with data pages and comprising, for each data page, a wear counter containing a value representative of the number of times that the page has been erased.

Abstract: An example method for writing and reading data in electrically erasable and programmable nonvolatile memory (EEPROM) cells may include writing, in erased blocks of a first memory zone, data each having a logical address defined in relation to a virtual memory; writing, in a second memory zone, metadata structures associated with the data present in the first memory zone, configuring, in a volatile memory zone, for each logical address of a data stored in the first memory zone, addresses of metadata structures comprising the logical address, reading the look-up table and then reading metadata structures that the look-up table designates, to find, from the logical address of a data, an address in the first memory zone of a block containing a valid data having the logical address.

Abstract: A method for writing and reading data in memory cells, comprises the steps of: defining a virtual memory, defining write commands and read commands of data (DT) in the virtual memory, providing a first nonvolatile physical memory zone (A1), providing a second nonvolatile physical memory zone (A2), and, in response to a write command of an initial data, searching for a first erased location in the first memory zone, writing the initial data (DT1a) in the first location (PB1(DPP0)), and writing, in the metadata (DSC0) an information (DS(PB1)) allowing the first location to be found and an information (LPA, DS(PB1)) forming a link between the first location and the location of the data in the virtual memory.

Abstract: A system and method of making a firmware self updatable depending on option information stored in a configuration module. The configuration module can either be in a memory device or a memory controller. The self-updation flexibility can be achieved by customizing the options as per the customer's requirements and can be done either through an USB interface or by pre-programming the configuration module or any other communication or programming options. The option information is provided by using a configurable module inside either the memory or the memory controller. After the basic initialization operations, the firmware reads the option information from the controller itself or any other non-volatile memory and performs the tasks to enhance the overall performance.

Abstract: A methodology for efficiently copying data is presented. An internal controller RAM is multiplexed between an existing RAM data and a copy back operation RAM. The data in the controller RAM is temporarily stored in a free space. The data of the internal RAM, which is to be copied, is read from a source page and is stored in the free space of the controller RAM, and from there, the data is written to a destination block of the internal RAM. After completion of the copy back operation, the data of the controller RAM that was moved to the free space is retrieved.