Patents by Inventor Hudson McD. Hobgood

Hudson McD. Hobgood has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micropipe-free silicon carbide and related method of manufacture
    Patent number: 9099377
    Abstract: Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.
    Type: Grant
    Filed: September 13, 2007
    Date of Patent: August 4, 2015
    Assignee: Cree, Inc.
    Inventors: Cem Basceri, Yuri Khlebnikov, Igor Khlebnikov, Cengiz Balkas, Murat N. Silan, Hudson McD. Hobgood, Calvin H. Carter, Jr., Vijay Balakrishna, Robert T. Leonard, Adrian R. Powell, Valeri T. Tsvetkov, Jason R. Jenny
  • Micropipe-free silicon carbide and related method of manufacture
    Patent number: 8410488
    Abstract: Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.
    Type: Grant
    Filed: September 13, 2007
    Date of Patent: April 2, 2013
    Assignee: Cree, Inc.
    Inventors: Cem Basceri, Yuri Khlebnikov, Igor Khlebnikov, Cengiz Balkas, Murat N. Silan, Hudson McD. Hobgood, Calvin H. Carter, Jr., Vijay Balakrishna, Robert T. Leonard, Adrian R. Powell, Valeri T. Tsvetkov, Jason R. Jenny