Abstract: The invention relates to an active matrix of thin-film transistors or TFTs for an optical sensor, comprising a matrix of transistors formed on a substrate comprising a gate, a drain and a source, a set of rows and a set of columns that are connected to the gates and to an electrode of the transistor, respectively, pixel electrodes and, according to the invention, a set of capacitive electrodes lying at the same level as the electrodes of the transistors so as to form, with the pixel electrodes, storage capacitors.

Abstract: The present invention relates to a process for displaying data on a matrix display consisting of N data lines and P selection lines at the intersections of which are situated the image points or pixels. The N data lines are grouped into {dot over (P)} blocks if N? lines where N={grave over (P)}×N?. Each block receives in parallel one of the P? data signals which is demultiplexed on the N? lines of the said block. The scanning of the N? data lines of a block is carried out from 1 to N? or from N? to 1, alternately, according to the selection lines.

Abstract: In a method for the manufacture of an active matrix for an electro-optical display device, the active zone exposure fields CH1, CH2 are obtained by the transfer of an active zone mask in such a way that there is a non-null overlap zone zl, zr, zt, zb between two successive exposure fields. The active zone mask is exposed a first time. This mask is positioned for the next exposure so as to overlap the first exposed field on a certain width F1, F2. In the overlap zones, an exposure of the mask provides only a part of the patterns.

Abstract: The invention concerns a display screen with active matrix comprising first and second transparent substrates enclosing a crystal liquid material, at least one counter electrode, pixel electrodes in lines and in columns, data lines, perpendicular selection lines, control devices for connecting the lines to the pixel electrodes, the pixel electrodes being controlled such that the electrodes connected to a common selection line have the same polarity while, for two adjacent selection lines the polarity is reversed, the pixel electrodes being located in a first plane while the other elements are located in a second plane distanced from the first plane, and a transparent mass plane being located between the two planes. Moreover, the mass plane has a structure such that at least the part found between two pixel electrodes of same polarity is recessed. The invention is applicable to LCD.

Abstract: The present invention relates to a process for compensating a circuit comprising at least one first conductor (lj) with a specified potential, at least one second conductor (ci) generating disturbances on the first conductor by capacitive coupling, and a first bus (CE) with a reference voltage, coupled capacitively to the first conductor.

Abstract: A device for encapsulating and passivating integrated control circuits of flat screens. A sealing bead is placed on a substrate plate in order to encapsulate and passivate an integrated control circuit mounted on the plate. In one embodiment, the sealing bead is placed directly on top of the control circuit. In a second embodiment, the sealing bead is placed on both sides of the circuit so as to form a chamber which is separate from that which contains the active matrix. In a third embodiment, an opaque material is also placed on top of the circuit which acts as a spacer and may also act as a "black matrix".

Abstract: Method for producing a display screen with a matrix of transistors provided with an optical mask. This method consists of depositing on a substrate (100) a layer of black polyimide (102) absorbing the visible light and followed by a layer of photosensitive resin, of insolating the resin through a mask masking the channels of the transistors to be embodied, of eliminating the zones insolated with the resin and the sub-adjacent zones of the polyimide, of depositing an ITO layer (106) on the unit, of eliminating the rest of the resin and the ITO surmounting said resin so as to form the drains/sources of the transistors, of successively depositing a layer of hydrogenated amorphous silicon (110), a layer of silicon nitride (112) and a layer of aluminium (114), then of photoengraving the stack of these layers so as to form the gate of the transistors, and finally to render passive the unit with a layer of silicon (116).

Abstract: Method for producing a display screen with a matrix of transistors provided with an optical mask. This method consists of depositing on a substrate (100) a layer of black polyimide (102) absorbing the visible light and followed by a layer of photosensitive resin, of insolating the resin through a mask masking the channels of the transistors to be embodied, of eliminating the zones insolated with the resin and the sub-adjacent zones of the polyimide, of depositing an ITO layer (106) on the unit, of eliminating the rest of the resin and the ITO surmounting said resin so as to form the drains/sources of the transistors, of successively depositing a layer of hydrogenated amorphous silicon (110), a layer of silicon nitride (112) and a layer of aluminium (114), then of photoengraving the stack of these layers so as to form the grid of the transistors, and finally to render passive the unit with a layer of silicon (116).