Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.

Abstract: A pulse width modulation (PWM) based Real-time clock (RTC) system includes a voltage regulator circuit, a capacitor, an RTC circuit and an on-off logic. The voltage regulator circuit is arranged to generate a regulated voltage to a connection node when enabled; the capacitor is coupled to the connection node; the RTC circuit is coupled to the connection node; and the on-off logic is coupled to the voltage regulator circuit and arranged to alternately enable and disable the voltage regulator circuit.

Abstract: A pulse width modulation (PWM) based Real-time clock (RTC) system includes a voltage regulator circuit, a capacitor, an RTC circuit and an on-off logic. The voltage regulator circuit is arranged to generate a regulated voltage to a connection node when enabled; the capacitor is coupled to the connection node; the RTC circuit is coupled to the connection node; and the on-off logic is coupled to the voltage regulator circuit and arranged to alternately enable and disable the voltage regulator circuit.

Abstract: A wavelength conversion device includes a photodetector for generating a photocurrent in response to the detection of radiation at a first wavelength. An avalanche multiplier amplifies the signal photocurrent and feeds this to a light emitting element that produces radiation at a second wavelength shorter than the first wavelength and corresponding to the detected radiation at the first wavelength. The components are assembled together in an integrated stacked arrangement either by epitaxial growth or wafer fusion of the individual components. The device is useful as an image intensifier or thermal imaging device.

Abstract: A wavelength conversion device includes a photodetector for generating a photocurrent in response to the detection of radiation at a first wavelength. An avalanche multiplier amplifies the signal photocurrent and feeds this to a light emitting element that produces radiation at a second wavelength shorter than the first wavelength and corresponding to the detected radiation at the first wavelength. The components are assembled together in an integrated stacked arrangement either by epitaxial growth or wafer fusion of the individual components. The device is useful as an image intensifier or thermal imaging device.

Abstract: A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.

Abstract: A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials.

Abstract: An infrared photodetector for high absorption efficiency at room or near room temperature is disclosed. The invention teaches a special design of quantum wells to obtain the desired performance. A quantum well infrared photodetector having a multi-quantum well structure for providing high absorption at room temperature and providing substantial dark current at room temperature is disclosed. The device also has contacts for receiving current from the multi-quantum well structure.

Abstract: A photodetector capable of normal incidence detection over a broad range of long wavelength light signals to efficiently convert infrared light into electrical signals. It is capable of converting long wavelength light signals into electrical signals with direct normal incidence sensitivity without the assistance of light coupling devices or schemes. In the apparatus, stored charged carriers are ejected by photons from quantum dots, then flow over the other barrier and quantum dot layers with the help of an electric field produced with a voltage applied to the device, producing a detectable photovoltage and photocurrent. The photodetector has multiple layers of materials including at least one quantum dot layer between an emitter layer and a collector layer, with a barrier layer between the quantum dot layer and the emitter layer, and another barrier layer between the quantum dot layer and the collector.

Abstract: A photodetector capable of normal incidence detection over a broad range of long wavelength light signals to efficiently convert infrared light into electrical signals. It is capable of converting long wavelength light signals into electrical signals with direct normal incidence sensitivity without the assistance of light coupling devices or schemes. In the apparatus, stored charged carriers are ejected by photons from quantum dots, then flow over the other barrier and quantum dot layers with the help of an electric field produced with a voltage applied to the device, producing a detectable photovoltage and photocurrent. The photodetector has multiple layers of materials including at least one quantum dot layer between an emitter layer and a collector layer, with a barrier layer between the quantum dot layer and the emitter layer, and another barrier layer between the quantum dot layer and the collector.

Abstract: A method for infrared (IR) imaging using a panel made of integrated GaAs quantum well infrared photodetector (QWIP) and near-infrared (NIR) or visible light emitting diode (LED). The panel is a large area diode with an optical window for top illumination or without the window for backside illumination. The integrated device acts as a photon energy up-converter which converts infrared light of wavelength longer than about 1.1 .mu.m to near infrared or visible light which falls into the silicon detector spectral range. Using this device, an IR image is up-converted and the resulting NIR or visible image is then detected by an off-the-shelf silicon charge-coupled-device (CCD) camera The image detected on the CCD camera represents the original infrared image. A specific device embodiment for converting 9 .mu.m IR to 870 nm NIR is given.

Abstract: A quantum well intersubband infrared (IR) photodetector has a spectral response tunable by an external voltage. The photodetector consists of multiple doped quantum wells with different well widths and barrier heights. The preferred embodiment is made by repeating the whole structure of the active region of a multiple quantum well intersubband IR photodetector. Differences between repeats or groups of well widths and barrier heights result in differences in the spectral IR response of the different repeats. The device resistance of a given group is designed to be very different from those for all the other groups. As a function of an applied voltage, the repeat with the highest resistance will be turned on to detect IR with the response peak at a wavelength .lambda..sub.1. Subsequently, the next highest resistance repeat will turn on when increasing voltage with its response peaked at .lambda..sub.2, and so on. Since .lambda..sub.1, .lambda..sub.