Abstract: One embodiment of the present disclosure describes a loopback network including a loopback datapath and a plurality of memory devices. The plurality of memory devices may include a first memory device coupled to a first trunk connector of the first loopback datapath via a first branch connector. The plurality of memory devices may also include a second memory device coupled to the first trunk connector of the first loopback datapath via a second branch connector. When data communicated with the first memory device is targeted by loopback parameters, the first memory device may output a first loopback data signal generated based at least in part on the first data to the first loopback datapath, and the second memory device may block output from the second memory device to the first loopback datapath.

Abstract: A video interaction method, performed by a terminal, includes: playing an interactive video in a video playing interface, the interactive video comprising a target story node; displaying, based on the interactive video being played to the target story node, an interactive control on a target video picture of the interactive video; receiving a trigger operation on the interactive control; and displaying, based on the trigger operation, interactive content corresponding to the interactive control.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a structure includes a first dielectric layer over a substrate, a first conductive feature in the first dielectric layer, a second dielectric layer over the first dielectric layer, a second conductive feature in the second dielectric layer, and a blocking region disposed between the first conductive feature and the second conductive feature. The second conductive feature is disposed between and abutting a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer. The blocking region extends laterally at least from the first sidewall of the second dielectric layer to the second sidewall of the second dielectric layer.

Abstract: The present invention is related to a use of a composition comprising ferrous amino acid chelate for the manufacture of a medicament for inhibiting angiogenesis, wherein the medicament comprises an effective amount of the ferrous amino acid chelate composition and a pharmaceutically acceptable carrier. The amino acid can be glycine and the angiogenesis can be related to cancer or eye disease.

Abstract: A video production method and apparatus, a storage medium, and a computer device are disclosed. The method includes: receiving a follow-shot instruction in a case that reference video content is played on a video play interface, the follow-shot instruction including a reference video identifier; displaying a first video display region and a second video display region on a terminal screen; playing the reference video content in the first video display region, and recording displayed real-time video content in the second video display region; and generating a target video based on the recorded real-time video content and the reference video content. The first video display region and the second video display region are displayed on the terminal screen, the reference video content is played in the first video display region, and the displayed real-time video content is recorded in the second video display region.

Abstract: A bonding device includes a flexible platen disposed between an upper platen assembly (9) and a transmission device and within a vacuum chamber (6). The flexible platen can expand to apply a downward pressure to the upper platen assembly (9) connected thereto. Under the effect of the pressure, the upper platen assembly (9) slowly moves downward until the upper platen assembly (9) itself and a lower platen assembly (7) respectively come into tight contact with objects to be bonded. After that, the flexible platen continues exerting the downward pressure on the upper platen assembly (9). In this way, the pressure applied by the upper platen assembly (9) to the objects to be bonded is uniform. Meanwhile, because of slow expansion of the flexible platen, the uniform pressure is applied slowly by the upper platen assembly (9).

Abstract: Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.

Abstract: The present invention is related to a method for cancer treatment comprising a step of administering to a subject in need thereof a therapeutically effective amount of a pharmaceutical composition comprising ferrous amino acid chelate and a pharmaceutically acceptable carrier. By means of amino acid chelating to ferrous and maintaining chelating state through the stomach, the pharmaceutical composition in accordance with the present invention would not cause any weight variation, and is suitable for inhibiting or treating cancer.

Abstract: A method for fabricating a semiconductor arrangement includes removing a portion of a first dielectric layer to form a first recess defined by sidewalls of the first dielectric layer, forming a first conductive layer in the first recess, removing a portion of the first conductive layer to form a second recess defined by the sidewalls of the first dielectric layer, forming a second conductive layer in the second recess, where the second conductive layer contacts the first conductive layer, forming a second dielectric layer over the second conductive layer, removing a portion of the second dielectric layer to form a third recess defined by sidewalls of the second dielectric layer, where the second conductive layer is exposed through the third recess, and forming a third conductive layer in the third recess, where the third conductive layer contacts the second conductive layer.

Abstract: A vacuumizing device and vacuumizing methods for providing a vacuum environment for bonding of substrate. The vacuumizing device includes a vacuum chamber, a bonding fixture and a vacuumizing system. The bonding fixture is disposed in the vacuum chamber and includes a substrate table provided with a plurality of grooves for retention of the substrate by suction. The vacuumizing system is disposed in communication with both the vacuum chamber and grooves. During vacuumizing by the vacuumizing system, a vacuum value in the grooves is smaller than or equal to a vacuum value in the vacuum chamber. In the device and methods, the vacuumizing system is used to vacuumize the grooves in the substrate table and the vacuum chamber so that the vacuum value in the grooves is always smaller than or equal to that in the vacuum chamber. As a result, the substrates are firmly retained on the substrate table without warping, thereby improving the quality of substrate bonding.

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a structure includes a first dielectric layer over a substrate, a first conductive feature in the first dielectric layer, a second dielectric layer over the first dielectric layer, a second conductive feature in the second dielectric layer, and a blocking region disposed between the first conductive feature and the second conductive feature. The second conductive feature is disposed between and abutting a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer. The blocking region extends laterally at least from the first sidewall of the second dielectric layer to the second sidewall of the second dielectric layer.

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a structure includes a first dielectric layer over a substrate, a first conductive feature in the first dielectric layer, a second dielectric layer over the first dielectric layer, a second conductive feature in the second dielectric layer, and a blocking region disposed between the first conductive feature and the second conductive feature. The second conductive feature is disposed between and abutting a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer. The blocking region extends laterally at least from the first sidewall of the second dielectric layer to the second sidewall of the second dielectric layer.

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Abstract: Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.

Abstract: A bonding device includes a flexible platen disposed between an upper platen assembly (9) and a transmission device and within a vacuum chamber (6). The flexible platen can expand to apply a downward pressure to the upper platen assembly (9) connected thereto. Under the effect of the pressure, the upper platen assembly (9) slowly moves downward until the upper platen assembly (9) itself and a lower platen assembly (7) respectively come into tight contact with objects to be bonded. After that, the flexible platen continues exerting the downward pressure on the upper platen assembly (9). In this way, the pressure applied by the upper platen assembly (9) to the objects to be bonded is uniform. Meanwhile, because of slow expansion of the flexible platen, the uniform pressure is applied slowly by the upper platen assembly (9).

Abstract: Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.

Abstract: Provided is a method for regulation of lipid metabolism comprising a step of administering to a subject in need thereof a therapeutically amount of pharmaceuticals. The pharmaceuticals comprise an effective amount of a composition containing a ferrous amino acid chelate and pharmaceutically acceptable carriers to regulate lipid metabolism. The amino acid is capable of being chelated with the ferrous iron in a chelated state stably as passing through a stomach. The composition containing the ferrous amino acid chelate can effectively control the variances of body weight and enhance metabolism of body fat of a subject. The pharmaceuticals prepared by the composition containing the ferrous amino acid chelate have effects on regulation of lipid metabolism.

Abstract: One embodiment of the present disclosure describes a loopback network including a loopback datapath and a plurality of memory devices. The plurality of memory devices may include a first memory device coupled to a first trunk connector of the first loopback datapath via a first branch connector. The plurality of memory devices may also include a second memory device coupled to the first trunk connector of the first loopback datapath via a second branch connector. When data communicated with the first memory device is targeted by loopback parameters, the first memory device may output a first loopback data signal generated based at least in part on the first data to the first loopback datapath, and the second memory device may block output from the second memory device to the first loopback datapath.