Patents by Inventor Hui Wang

Hui Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11957064
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
    Type: Grant
    Filed: October 18, 2022
    Date of Patent: April 9, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 11957023
    Abstract: A light-emitting diode display panel, a manufacturing method thereof, and an organic light-emitting diode display device are provided. The light-emitting diode display panel includes: a base substrate including a display region and a peripheral region surrounding the display region; a plurality of sub-pixels located in the display region and located at a side of the base substrate; a color-resistance layer located at a side of a second electrode in the sub-pixel away from the base substrate; and a light-blocking structure located in the peripheral region and being an annular structure surrounding the plurality of sub-pixels. The light-blocking structure includes a first light-blocking structure and a second light-blocking structure. The first light-blocking structure includes at least one interval extending in a direction from the display region pointing to the peripheral region. The second light-blocking structure at least fully fills the interval.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: April 9, 2024
    Inventors: Dongsheng Li, Kuanta Huang, Shengji Yang, Pengcheng Lu, Yunlong Li, Qing Wang, Yongfa Dong, Xiaobin Shen, Hui Tong, Xiong Yuan, Yu Wang, Xiaochuan Chen
  • Patent number: 11954171
    Abstract: Method of generating frustration score starts with processor receiving data associated with interactions by users with website including webpages displayed during sessions. Processor generates page view scores based on page view experience indicators and zone experience indicators associated with the webpages, generates session scores based on the page view scores and session experience indicators, and generates webpage scores based on page view scores. Processor identifies the webpage associated with highest level of frustration based on page view and webpage scores and identifies the session that is associated with highest level of frustration based on the session scores. Processor causes a user interface to be displayed on a display device that includes a visualization of interactions by a user with the website associated with the session with the highest level of frustration and an identification of the webpage associated with the highest level of frustration. Other embodiments are described herein.
    Type: Grant
    Filed: November 6, 2023
    Date of Patent: April 9, 2024
    Assignee: Content Square SAS
    Inventors: Vincent Colombet, Victor Cojocaru, Hui Wang, Sihem Abdoun
  • Patent number: 11955401
    Abstract: A package structure includes a semiconductor device and an adhesive pattern. The adhesive pattern surrounds the semiconductor device, wherein an angle ? is formed between a sidewall of the semiconductor device and a sidewall of the adhesive pattern, 0°<?<90° wherein the adhesive layer has a first opening misaligned with a corner of the semiconductor device closest to the first opening.
    Type: Grant
    Filed: March 13, 2023
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Hui Wang, Der-Chyang Yeh, Shih-Peng Tai, Tsung-Shu Lin, Yi-Chung Huang
  • Patent number: 11952450
    Abstract: A compound for an encapsulation film and a composition thereof, a film, an organic light-emitting device, and an encapsulation method are provided. The composition comprises the compound, one or more photocurable and thermocurable propenyl compounds, and one or more compounds that produce a free radical and produce an acid under light or heat. The encapsulation film includes the composition as a film of an organic layer. The organic light-emitting device includes the film. The encapsulation method involves encapsulating the organic light-emitting device using the encapsulation film. The composition containing the compound serves as an organic layer. An encapsulation film for the organic light-emitting device is manufactured by repetitively and alternately laminating an inorganic layer and the organic layer.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: April 9, 2024
    Assignee: Jilin OLED Optical and Electronic Materials Co., Ltd.
    Inventors: Enxin Yin, Xiaochen Jiang, Weiwei Duan, Zhe Yu, Hui Wang
  • Patent number: 11953518
    Abstract: The present disclosure provides a switching matrix system and an operating method thereof for semiconductor characteristic measurement. The switching matrix system is configured to: detect an assembly of at least one switching matrix module inserted into a plurality of slots of the switching matrix system; determine a user interface according to the assembly of the at least one switching matrix module inserted into the slots, wherein the user interface includes an operable object corresponding to the assembly; and provide the user interface.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: April 9, 2024
    Assignee: STAR TECHNOLOGIES, INC.
    Inventors: Choon Leong Lou, Hsiao Hui Hsieh, Li Min Wang
  • Publication number: 20240110255
    Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.
    Type: Application
    Filed: October 27, 2021
    Publication date: April 4, 2024
    Inventors: Meng XIA, Baoqiao WU, Meizhuang WU, Jun XING, Jie WANG, Hui CHEN, Jingcheng YAN, Qi HUANG, Lin PENG, Junwei HE, Zhaohui DING, Qiancheng SHEN
  • Publication number: 20240114688
    Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.
    Type: Application
    Filed: November 21, 2022
    Publication date: April 4, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Chia-Wen Wang, Chien-Hung Chen, Chia-Hui Huang, Ling Hsiu Chou, Jen Yang Hsueh, Chih-Yang Hsu
  • Publication number: 20240114201
    Abstract: Provided are a video preloading method and apparatus, a device, and a medium. The method includes: in response to determining that a length of a buffered video reaches a first numerical value, creating and executing a preloading task, where the buffered video is a current video that is buffered and is to be played, and the preloading task is used for preloading a subsequent video; and in an execution process of the preloading task, in response to determining that the length of the buffered video is less than or equal to a second numerical value, cancelling the preloading task, where the second numerical value is less than the first numerical value.
    Type: Application
    Filed: January 30, 2022
    Publication date: April 4, 2024
    Inventors: Shenglan HUANG, Haiqing TAO, Hui WANG, Chao MA, Bing YAN, Xiaocheng LI
  • Patent number: 11948949
    Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.
    Type: Grant
    Filed: July 15, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Hsiao-Hui Tseng, Jen-Cheng Liu, Jhy-Jyi Sze, Shyh-Fann Ting, Wei Chuang Wu, Yen-Ting Chiang, Chia Ching Liao, Yen-Yu Chen
  • Patent number: 11946083
    Abstract: The present invention relates to the production of capsaicinoid compounds including Capsaicin and Nonivamide via microbial fermentation.
    Type: Grant
    Filed: August 24, 2022
    Date of Patent: April 2, 2024
    Assignee: Conagen Inc.
    Inventors: Hui Chen, Xiaodan Yu, LanLan Zhou, Hongxue Wang, Min Wang
  • Patent number: 11945650
    Abstract: The present disclosure discloses a movable box and a method for controlling the same, and a package storage device. The movable box includes a box body, a box door, a security lock and a verification component. The security lock is connected between the box body and the box door, the verification component is disposed on a surface of the box door and is connected to the security lock, and the verification component is configured to acquire verification information, and control the security lock to be unlocked in response to the verification information being preset information, and a first locking member is further disposed in the box body at a bottom thereof, and the first locking member protrudes downward from the bottom of the box body.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: April 2, 2024
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Shu Wang, Hui Rao, Zhiguo Zhang, Xin Li
  • Patent number: 11946161
    Abstract: A method for synthesizing an intergrown twin Ni2Mo6S6O2/MoS2 two-dimensional nanosheet with exposed (00L) crystal planes is disclosed. An Ni—Mo bonded precursor is formed by using an ion insertion method to restrict Ni ions to be located in a lattice matrix of a Mo-based compound; a dinuclear metal sulfide Ni2Mo6S6O2 is formed by precisely adjusting and controlling a concentration of a sulfur atmosphere and utilizing a reconstruction effect of Ni element in the lattice matrix of the Mo-based compound; and meanwhile, a growth direction of Ni2Mo6S6O2 is precisely adjusted and controlled by using a method for growing a single crystal in a limited area, so that Ni2Mo6S6O2 is grown, taking a single crystal MoS2 as a growth template, with the single crystal MoS2 alternately along a crystal plane (110) of the single crystal MoS2, so as to form a twin Ni2Mo6S6O2/MoS2 two-dimensional nanosheet in which Ni2Mo6S6O2 and MoS2 are intergrown.
    Type: Grant
    Filed: January 13, 2021
    Date of Patent: April 2, 2024
    Assignee: Institute of Analysis, Guangdong Academy of Sciences (China National Analytical Center, Guangzhou)
    Inventors: Fuxian Wang, Hui Cheng, Liling Wei, Qiong Liu
  • Publication number: 20240102955
    Abstract: A non-invasive time domain reflection probe calibration method includes: using different volume ratio of ethanol and deionized water mixed solution to calculate a test target's medium weight coefficient and waveguide length of the non-invasive time domain reflection probes; using different concentrations of NaCl solutions to calibrate a waveguide geometric dimensioning of the non-invasive time domain reflection probes; preparing compacted soil samples with known different moisture contents and densities, and calibrating a correlation parameter of compacted soil samples' dielectric constant and conductivity with moisture content and density. The method not only determines the sensitivity of the test target medium of the non-invasive time domain reflection probes, but also obtains the waveguide length and geometric dimensioning of the probe, and realizes an accurate test of moisture content and density of the soil.
    Type: Application
    Filed: July 28, 2023
    Publication date: March 28, 2024
    Applicants: China Jikan Research Institute Of Engineering Investigations And Design, Co.,Ltd, Xi'an Jiaotong University
    Inventors: Jie CAO, Yonglin YANG, Zaixin WAN, Peng GAO, Qingyi MU, Dongjing WANG, Yuanqiang ZHOU, Zhi LIU, Long ZHANG, Hui LI, Jian CHEN, Teng YANG, Lei RAN, Jiao LIN, Xiao DONG, Shuai LIU, Weiwei ZHAO
  • Publication number: 20240105496
    Abstract: The present invention provides a substrate supporting apparatus having a spin chuck and a plurality of locating pins. The spin chuck configured to support and rotate a substrate has a supporting surface. The locating pins are disposed at the periphery of the supporting surface for limiting the substrate horizontal displacement. The supporting surface defines a first annular region. The first annular region is divided into a plurality of pin regions and a plurality of non-pin regions. The pin regions and the non-pin regions are arranged alternatively in a circumferential direction of the first annular region. Each of the pin regions is corresponding to one locating pin. A plurality of Bernoulli holes are set in the first annular region and is configured as an uneven structure in the first annular region so as to supply stronger gas flow in the pin regions than in the non-pin regions.
    Type: Application
    Filed: December 16, 2020
    Publication date: March 28, 2024
    Applicant: ACM RESEARCH (SHANGHAI), INC.
    Inventors: Hui Wang, Feng Liu, Xiaofeng Tao, Shena Jia, Fuping Chen, Haibo Hu, Yang Liu
  • Publication number: 20240100697
    Abstract: The present disclosure relates to a multi-thread controller for a parallel robot. All tasks are concentrated in four layered threads, namely, a main thread, a real-time thread, a preprocessing thread and a background thread; different priorities of tasks are placed in different levels of threads, so that motion logic is first ensured, second motion planning, then communication and interface interaction, and finally file reading and time consumption calculation; various operations are strictly performed in respective threads; and between the threads are provided a thread security queue for data interaction and a thread clock calling and task pushing mechanism, so that the security of communication calling and the flexibility of data interaction are realized between the threads.
    Type: Application
    Filed: April 12, 2022
    Publication date: March 28, 2024
    Inventors: Pingbu Zhu, Yanhua Li, Hui Wang, Zhifeng Li, Songtao Liu
  • Publication number: 20240105091
    Abstract: The present disclosure provides a gate driving circuit, a method of driving a gate driving circuit, and a display panel. The gate driving circuit includes a plurality of driving units connected in cascade. Each driving unit includes: N shift register units; and a mode control circuit connected to the N shift register units, wherein the mode control circuit is configured to receive a control signal for the driving unit, and connect the N shift register units in one of a plurality of resolution modes under the control of the control signal.
    Type: Application
    Filed: October 20, 2023
    Publication date: March 28, 2024
    Applicant: BOE Technology Group Co., Ltd.
    Inventors: Weixing Liu, Wei Qin, Kuanjun Peng, Tieshi Wang, Chunfang Zhang, Hui Zhang, Changfeng Li, Shunhang Zhang, Kai Hou, Hongrun Wang, Liwei Liu, Yunsik Im, Wanpeng Teng, Xiaolong Li, Kai Guo, Zhiqiang Xu
  • Patent number: D1020466
    Type: Grant
    Filed: January 3, 2024
    Date of Patent: April 2, 2024
    Assignee: SHEN ZHEN QUICK FIT PLASTIC CO., LTD.
    Inventors: Qi Wang, Hui Kang
  • Patent number: D1021816
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: April 9, 2024
    Assignee: Schneider Electric Industries SAS
    Inventors: Yingzhi Guan, Benoit Lecoanet, Leihong Zheng, Min Xu, Chuanwu Li, Xu Han, Zhibao Wang, Hui Li
  • Patent number: D1021817
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: April 9, 2024
    Assignee: Schneider Electric Industries SAS
    Inventors: Yingzhi Guan, Benoit Lecoanet, Leihong Zheng, Min Xu, Chuanwu Li, Xu Han, Zhibao Wang, Hui Li