Publication number: 20150041959
Abstract: A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, a stabilizer, the stabilizer including methyl acetoacetate, ethyl-2-ethylacetoacetate, nonanol, decanol, undecanol, dodecanol, acetic acid, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, or mixtures thereof, and a solvent, wherein the solvent includes acetone, tetrahydrofuran, benzene, toluene, diethyl ether, chloroform, dichloromethane, ethyl acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, ethyl lactate, ? butyrolactone, methyl isobutyl ketone, or mixtures thereof, the solvent is present in an amount of about 70 to about 99.
Type:
Application
Filed:
October 24, 2014
Publication date:
February 12, 2015
Inventors:
Sang Ran KOH, Sang Kyun KIM, Sang Hak LIM, Mi Young KIM, Hui Chan YUN, Do Hyeon KIM, Dong Seon UH, Jong Seob KIM