Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.

Abstract: The present disclosure provides a method of forming a semiconductor device. The method includes: forming an interconnect structure over a substrate; forming a first gate structure and a second gate structure in a first layer of the interconnect structure; forming a first metal oxide layer and a second metal oxide layer in a second layer of the interconnect structure over the first gate structure and the second gate structure, respectively; forming an implant mask over the first metal oxide layer and the second metal oxide layer, the implant mask having different thicknesses corresponding to the first metal oxide layer and the second oxide layer; and performing an implantation operation on the first metal oxide layer and the second metal oxide layer.

Abstract: A cis-TEVP fusion protein including a TEVP protease, a TEVP cleavage site and a target protein provide a platform for expression of the target protein. A trans-TEVP fusion protein including a TEVP cleavage site and a target protein, the amino-terminal portion of the target protein adjacent to the C-terminal portion of the TEVP cleavage site, the amino acidic residue in position P2 of the TEVP cleavage site being a Valine also produces the target protein by the same process. A cis-TEVP fusion protein system comprising the first fusion protein and a suitable host cell; a trans-TEVP fusion protein system comprising the second fusion protein and a suitable host cell; associated methods to produce target proteins, and kits of parts are also disclosed herein.

Abstract: An adhesive tape adhering device includes a table unit, a wafer bearing unit, an adhesive tape pull-tight unit, an adhesive tape clipping unit, and a rolling unit. The wafer bearing unit movably disposes on the table unit upwardly and downwardly for bearing a wafer. The adhesive tape pull-tight unit has a bundle of adhesive tape, and the adhesive tape pull-tight unit disposes on the table unit and next to one side of the wafer bearing unit. The adhesive tape clipping unit disposes on the table unit and next to the other side of the wafer bearing unit for tightly clipping an end side of a tape of the bundle of adhesive tape.

Abstract: An apparatus and method of vacuum metallic sintering for a semiconductor uses a quartz tube, a vacuum air-extracting apparatus, a furnace and a gas injection pipe. The metal sintered does not produce metal oxide in a vacuum established by the vacuum air-extracting apparatus. After sintering, a movable furnace can withdraw from the quartz tube immediately to decrease cooling time.