Patents by Inventor Huiling Wu

Huiling Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240170726
    Abstract: This application provides a non-aqueous electrolyte and a preparation method thereof, and a secondary battery and an electric apparatus containing the same. The non-aqueous electrolyte contains the non-aqueous solvent and lithium ions, first cations, and first anions dissolved therein, where the first cation is a metal cation Men+ other than the lithium ion, n representing a chemical valence of the metal cation; the first anion is a tetrafluoroborate anion BF4?; mass concentration of the first cations in the non-aqueous electrolyte is D1 ppm, and mass concentration of the first anions in the non-aqueous electrolyte is D2 ppm, both based on total mass of the non-aqueous electrolyte; and the non-aqueous electrolyte satisfies that D1 is 0.1 to 1250 and that D1/D2 is 0.02 to 2. The non-aqueous electrolyte in this application enables the secondary battery to have good cycling performance, safety performance, and kinetic performance.
    Type: Application
    Filed: January 30, 2024
    Publication date: May 23, 2024
    Inventors: Zeli Wu, Huiling Chen, Changlong Han, Bin Jiang, Qian Liu, Jianfu He, Jingxuan Sun, Lei Huang
  • Patent number: 11948998
    Abstract: A method includes forming a semiconductor substrate having an oxide layer embedded therein, forming a multi-layer (ML) stack including alternating channel layers and non-channel layers over the semiconductor substrate, forming a dummy gate stack over the ML, forming an S/D recess in the ML to expose the oxide layer, forming an epitaxial S/D feature in the S/D recess, removing the non-channel layers from the ML to form openings between the channel layers, where the openings are formed adjacent to the epitaxial S/D feature, and forming a high-k metal gate stack (HKMG) in the openings between the channel layers and in place of the dummy gate stack.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Xusheng Wu, Chang-Miao Liu, Huiling Shang
  • Publication number: 20240102979
    Abstract: A calibration concentration selection method includes steps of: using a gas sensor array to obtain a concentration variation sequence and a response variation sequence of the gas mixture; constructing and training an AE-BP model; constructing VAE and identically distributing the response variation sequence; inputting the identically distributed response variation sequence into the trained AE-BP model to output a predicted concentration variation sequence; and then normalizing the predicted concentration variation sequence to generate a target concentration variation sequence; sorting a target concentration variation sequence and calculating a response gradient sequence; processing the response gradient sequence for obtaining a corresponding smoothed gradient sequence; if the spike is greater than a preset hyperparameter, finding a large gradient concentration interval; and selecting concentration test points by random uniform sampling according to weights; and selecting concentration test points from all othe
    Type: Application
    Filed: December 8, 2023
    Publication date: March 28, 2024
    Inventors: Huiling Tai, Yadong Jiang, Yilun Ma, Zaihua Duan, Yuanming Wu, Zhen Yuan
  • Publication number: 20240105517
    Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises first semiconductor stack over a substrate, wherein the first semiconductor stack includes first semiconductor layers separated from each other and stacked up along a direction substantially perpendicular to a top surface of the substrate; second semiconductor stack over the substrate, wherein the second semiconductor stack includes second semiconductor layers separated from each other and stacked up along the direction substantially perpendicular to the top surface of the substrate; inner spacers between edge portions of the first semiconductor layers and between edge portions of the second semiconductor layers; and a bulk source/drain (S/D) feature between the first semiconductor stack and the second semiconductor stack, wherein the bulk S/D feature is separated from the substrate by a first air gap, and the bulk S/D feature is separated from the inner spacers by second air gaps.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 28, 2024
    Inventors: Xusheng Wu, Ying-Keung Leung, Huiling Shang
  • Publication number: 20240096971
    Abstract: A method including providing a device including a gate structure and a source/drain feature adjacent to the gate structure. An insulating layer (e.g., CESL, ILD) is formed over the source/drain feature. A trench is etched in the insulating layer to expose a surface of the source/drain feature. A semiconductor material is then formed in the etched trench on the surface of the source/drain feature. The semiconductor material is converted to a silicide.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 21, 2024
    Inventors: Xusheng WU, Chang-Miao LIU, Ying-Keung LEUNG, Huiling SHANG, Youbo LIN
  • Publication number: 20240092760
    Abstract: The present disclosure provides compounds that are cGAS antagonists, methods of preparation of the compounds, pharmaceutical compositions comprising the compounds, and their use in medical therapy.
    Type: Application
    Filed: June 13, 2023
    Publication date: March 21, 2024
    Inventors: Jian QIU, Qi WEI, Matt TSCHANTZ, Heping SHI, Youtong WU, Huiling TAN, Lijun SUN, Chuo CHEN, Zhijian CHEN
  • Publication number: 20240079651
    Abstract: Provided are a non-aqueous electrolyte and a preparation method thereof, and a secondary battery and an electric apparatus containing the same. The non-aqueous electrolyte contains a non-aqueous solvent and lithium ions, first cations, and first anions dissolved therein, where the first cation is a metal cation Men+ other than the lithium ion, n representing a chemical valence of the metal cation; the first anion is a difluoroxalate borate anion DFOB?; mass concentration of the first cations in the non-aqueous electrolyte is D1 ppm, and mass concentration of the first anions in the non-aqueous electrolyte is D2 ppm, both based on total mass of the non-aqueous electrolyte; and the non-aqueous electrolyte satisfies that D1 is 0.5 to 870 and that D1/D2 is 0.02 to 2. The non-aqueous electrolyte in this application enables the secondary battery to have good cycling performance, safety performance, and kinetic performance.
    Type: Application
    Filed: November 7, 2023
    Publication date: March 7, 2024
    Inventors: Zeli Wu, Bin Jiang, Changlong Han, Huiling Chen, Lei Huang, Cuiping Zhang, Jie Guo, Wenhao Liu
  • Patent number: 11667717
    Abstract: Disclosed are antibodies binding to human IL-4R, having identical variable regions and different constant regions, wherein the variable regions can specifically bind to human IL-4R, and the constant regions affect the activity of the whole antibody through an amino acid site mutation. The above-mentioned antibodies can be used to treat diseases related to IL-4R overexpression, such as atopic dermatitis, asthma, etc., and thus possesses good clinical application prospects.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: June 6, 2023
    Assignee: SUNSHINE GUOJIAN PHARMACEUTICAL (SHANGHAI) CO., LTD.
    Inventors: Jie Zhao, Liangfeng Jiang, Chen Chen, Huiling Wu, Yuping Huang, Haomin Huang, Zhenping Zhu
  • Publication number: 20210206861
    Abstract: Disclosed are antibodies binding to human IL-4R, having identical variable regions and different constant regions, wherein the variable regions can specifically bind to human IL-4R, and the constant regions affect the activity of the whole antibody through an amino acid site mutation. The above-mentioned antibodies can be used to treat diseases related to IL-4R overexpression, such as atopic dermatitis, asthma, etc., and thus possesses good clinical application prospects.
    Type: Application
    Filed: August 20, 2019
    Publication date: July 8, 2021
    Inventors: Jie ZHAO, Liangfeng JIANG, Chen CHEN, Huiling WU, Yuping HUANG, Haomin HUANG, Zhenping ZHU
  • Publication number: 20150132302
    Abstract: The present disclosure provides immunogenic compositions, such as vaccines, including DNA vaccines, and uses thereof, e.g., to suppress or prevent an immune response and/or to treat or prevent an autoimmune disease.
    Type: Application
    Filed: May 1, 2013
    Publication date: May 14, 2015
    Inventors: Stephen Alexander, Yuan Min Wang, Guoping Zheng, Huiling Wu, David Charles Hamlyn Harris, Yiping Wang
  • Publication number: 20060194752
    Abstract: Methods for treating or preventing renal disease or inducing passive immunity against renal disease by administering polynucleotides encoding MCP-1 or both MCP-1 and RANTES are provided. Compositions containing polynucleotides encoding MCP-1 or both MCP-1 and RANTES are also provided.
    Type: Application
    Filed: June 7, 2005
    Publication date: August 31, 2006
    Applicant: The Children's Hospital at Westmead Sydney West Area Health Service
    Inventors: Stephen Alexander, David Harris, Yiping Wang, Huiling Wu, Guoping Zheng