Patents by Inventor Hun Jae Chung
Hun Jae Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9419176Abstract: A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.Type: GrantFiled: December 16, 2013Date of Patent: August 16, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung-wook Hwang, Han-kyu Seong, Hun-jae Chung, Nam-goo Cha
-
Publication number: 20150325745Abstract: A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.Type: ApplicationFiled: December 16, 2013Publication date: November 12, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung-wook HWANG, Han-kyu SEONG, Hun-jae CHUNG, Nam-goo CHA
-
Patent number: 9166099Abstract: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.Type: GrantFiled: September 16, 2011Date of Patent: October 20, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-won Hwang, Geun-woo Ko, Sung-hyun Sim, Hun-jae Chung, Han-kyu Seong, Cheol-soo Sone, Jin-hyun Lee, Hyung-duk Ko, Suk-ho Choi, Sung Kim
-
Patent number: 9024294Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.Type: GrantFiled: April 9, 2014Date of Patent: May 5, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Han Kyu Seong, Hun Jae Chung, Jung Ja Yang, Cheol Soo Sone
-
Patent number: 8941140Abstract: A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.Type: GrantFiled: March 15, 2013Date of Patent: January 27, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung-wook Hwang, Seong-eun Park, Hun-jae Chung
-
Patent number: 8907320Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.Type: GrantFiled: January 31, 2013Date of Patent: December 9, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Won Hwang, Geun-Woo Ko, Sung-Hyun Sim, Jung-Sub Kim, Hun-Jae Chung, Cheol-Soo Sone
-
Patent number: 8853671Abstract: A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods.Type: GrantFiled: October 22, 2012Date of Patent: October 7, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Nam-Goo Cha, Geon-Wook Yoo, Han-Kyu Seong, Sam-Mook Kang, Hun-Jae Chung
-
Patent number: 8847199Abstract: A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode.Type: GrantFiled: November 8, 2012Date of Patent: September 30, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Nam-Go Cha, Geon-Wook Yoo, Han-Kyu Seong, Sam-Mook Kang, Hun-Jae Chung
-
Publication number: 20140217361Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.Type: ApplicationFiled: April 9, 2014Publication date: August 7, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han Kyu SEONG, Hun Jae CHUNG, Jung Ja YANG, Cheol Soo SONE
-
Patent number: 8735867Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.Type: GrantFiled: September 13, 2011Date of Patent: May 27, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Han Kyu Seong, Hun Jae Chung, Jung Ja Yang, Cheol Soo Sone
-
Publication number: 20130313514Abstract: There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer.Type: ApplicationFiled: March 15, 2013Publication date: November 28, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Wook HWANG, Geon Wook YOO, Nam Goo CHA, Jae Hyeok HEO, Han Kyu SEONG, Hun Jae CHUNG
-
Publication number: 20130252363Abstract: A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.Type: ApplicationFiled: May 15, 2013Publication date: September 26, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han Kyu SEONG, Hun Jae CHUNG, Jung Ja YANG, Cheol Soo SONE
-
Patent number: 8455284Abstract: A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.Type: GrantFiled: September 13, 2011Date of Patent: June 4, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Han Kyu Seong, Hun Jae Chung, Jung Ja Yang, Cheol Soo Sone
-
Patent number: 8274069Abstract: There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InxGa(1-x)N layers (0<x<1) and at least one AlyGa(1-y)N layer (0?y<1), and the AlyGa(1-y)N layer is stacked between the InxGa(1-x)N layers.Type: GrantFiled: December 12, 2008Date of Patent: September 25, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hun Jae Chung, Cheol Soo Sone, Sung Hwan Jang, Rak Jun Choi, Soo Min Lee
-
Publication number: 20120068154Abstract: A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufacturing a graphene quantum dot light emitting device includes: forming a first graphene doped with a first dopant; forming a graphene quantum dot layer including a plurality of graphene quantum dots on the first graphene; and forming a second graphene doped with a second dopant on the graphene quantum dot layer.Type: ApplicationFiled: September 16, 2011Publication date: March 22, 2012Applicant: SAMSUNG LED CO., LTD.Inventors: Sung-won HWANG, Geun-woo KO, Sung-hyun SIM, Hun-jae CHUNG, Cheol-soo SONE, Jin-hyun LEE, Byung-hee HONG, Su-kang BAE
-
Publication number: 20120068152Abstract: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.Type: ApplicationFiled: September 16, 2011Publication date: March 22, 2012Applicant: SAMSUNG LED CO., LTD.Inventors: Sung-won HWANG, Geun-woo KO, Sung-hyun SIM, Hun-jae CHUNG, Han-kyu SEONG, Cheol-soo SONE, Jin-hyun LEE, Hyung-duk KO, Suk-ho CHOI, Sung KIM
-
Publication number: 20120068153Abstract: A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.Type: ApplicationFiled: September 13, 2011Publication date: March 22, 2012Inventors: Han Kyu Seong, Hun Jae Chung, Jung Ja Yang, Cheol Soo Sone
-
Publication number: 20120061641Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.Type: ApplicationFiled: September 13, 2011Publication date: March 15, 2012Inventors: Han Kyu Seong, Hun Jae Chung, Jung Ja Yang, Cheol Soo Sone
-
Publication number: 20090278113Abstract: There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InxGa(1-x)N layers (0<x<1) and at least one AlyGa(1-y)N layer (0?y<1), and the AlyGa(1-y)N layer is stacked between the InxGa(1-x)N layers.Type: ApplicationFiled: December 12, 2008Publication date: November 12, 2009Inventors: Hun Jae CHUNG, Cheol Soo SONE, Sung Hwan JANG, Rak Jun CHOI, Soo Min LEE