Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Abstract: A degassing apparatus for a secondary battery, and a degassing method using same, is provided. The degassing apparatus includes a drive motor and a jig arm configured to pressurize a first surface of a gas pocket of a battery cell and a second surface opposite the first surface by controlling a separation distance by the operation of a driving motor. The degassing apparatus is capable of performing an effective degassing and sealing process for the battery cell without positional movement of the battery cell during cell activation or after cell activation.

Abstract: A semiconductor wafer cleaning composition for used in a semiconductor device manufacturing process and a method of cleaning a semiconductor wafer using the cleaning composition are provided. The cleaning composition includes surfactants represented by Formula 1 and Formula 2, respectively, an organic or inorganic acid, and water occupying for the remaining proportion. The cleaning method is a method of immersing a semiconductor wafer in the cleaning composition for 100 to 500 seconds. The cleaning composition and the cleaning method according to the present disclosure provide an incredibility improved removal rate and an effective cleaning power for contaminants, especially organic wax, during a process of polishing the surface of a wafer used to manufacture semiconductor devices, thereby providing a super-cleaned wafer surface, resulting in production of reliable semiconductor devices.

Abstract: An apparatus for autonomous driving of a vehicle may comprise a processor configured to execute instructions stored in a memory to cause the apparatus to perform receiving, from a navigation system, a first path, generating, based on the first path, a second path, and autonomously driving, following the second path, the vehicle, analyzing information provided from at least one of a sensor module of the vehicle or an external server, determining, based on an error range and a location of the vehicle, whether the vehicle deviates from the first path or the second path, and generating, based on the determining, a third path.

Abstract: The present disclosure relates to a crystallization method of branched-chain amino acids capable of sustainably cycling ammonia, and branched-chain amino acid crystal produced by the method.

Abstract: A conductive composite material, a method of preparing the same, and a secondary battery including the same. The conductive composite material may increase the proportion of an active material when forming an electrode by chemically bonding a conductive material and a binder to each other. A method of preparing the conductive composite material comprises ionizing carbon-based particles in a predetermined polarity, ionizing PTFE particles in a polarity different from that of the carbon-based particles, and chemically bonding the ionized carbon-based particles and the ionized PTFE particles, which are ionized in different polarities, to each other.

Abstract: A display device includes pixels connected to scan lines and data lines, each pixel including a driving transistor and at least one light emitting element, and a timing controller configured to generate output data using external input data. The timing controller includes a first compensator configured generate first data by correcting the external input data using at least one of optical measurement information, a threshold voltage of each of the driving transistors, mobility information, dimming information, and temperature information, and an afterimage compensator configured to generate second data based on age information of each light emitting element and the first data, generate third data based on a current amount corresponding to the first data and a current amount corresponding to the second data, and generate the age information by accumulating the third data.

Abstract: Provided is an aerogel blanket and a method for producing the same, wherein a catalyzed sol is sufficiently and uniformly impregnated into a blanket in an impregnation tank, and the catalyzed sol is allowed to stay in the impregnation tank for a specific time to control fluidity while achieving a viscosity at which the catalyzed sol can be easily introduced into the blanket, thereby forming a uniform aerogel in the blanket. As a result, the uniformity of pore structure and thermal insulation performance of an aerogel blanket are improved, the loss of raw materials is reduced through the impregnation process, the occurrence of process problems is reduced, and the generation of dust is reduced.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Abstract: Provided is a method for preparing an oligomer including: supplying a monomer stream and a solvent stream to a reactor to perform an oligomerization reaction to prepare a reaction product; supplying a discharge stream from the reactor including the reaction product to a separation device and supplying a lower discharge stream from the separation device to a settling tank; adding an organic flocculant to the settling tank to settle and remove a polymer and supplying the lower discharge stream from the separation device from which the polymer is removed to a high boiling point separation column; and removing a high boiling point material from the lower portion in the high boiling point separation column and supplying an upper discharge stream including an oligomer to a solvent separation column.

Abstract: A column driver integrated circuit (IC) which drives a first group of pixel lines connected to a first group of pixels included in a display panel, and a second group of pixel lines connected to a second group of pixels included in the display panel, the column driver IC including: a master gray scale voltage generation circuit configured to divide a reference voltage to generate tap voltages, and to generate a first low-power mode gray scale voltage based on at least one of the tap voltages; and a first low-power mode amplifier configured to drive the first group of pixel lines based on the first low-power mode gray scale voltage.

Abstract: A semiconductor manufacturing equipment includes: a first clamp fixing a dicing tape, on which a plurality of divided dies are disposed, and configured to ascend and descend; and a first expander adjacent to the first clamp and including a body, a first protrusion connected to the body, and a second protrusion connected to the body and spaced apart from the first protrusion, wherein, when no pressure is exerted on the first protrusion and the second protrusion, the first protrusion and the second protrusion protrude from the body, and wherein, when a pressure is exerted on the first protrusion and the second protrusion, the first protrusion and the second protrusion descend into the body depending on a magnitude of the pressure exerted on the first protrusion and the second protrusion.

Abstract: An apparatus for manufacturing a semiconductor device includes a substrate transfer unit configured to transfer a substrate, a rail unit including a driving rail extending in a first direction that the substrate transfer unit moves and a stopper on a side of the driving rail in a second direction crossing the first direction, and a lifting unit configured to move in the first direction and a third direction perpendicular to the first and second directions to remove the substrate transfer unit from the rail unit, wherein the lifting unit is configured to contact the stopper to move the stopper from a closed state to an open state.

Abstract: An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.

Abstract: A button type secondary battery includes a wound electrode assembly; a lower can with the electrode assembly and an electrolyte in the lower can; a top plate to close the lower can; a positive electrode terminal coupled to the top plate through a gasket to be electrically insulated from the top plate with a portion of the positive electrode terminal passing through a hole in the top plate to be bonded to a positive electrode tab; a top insulator covering a top surface of the electrode assembly; and a bottom insulator covering a bottom surface of the electrode assembly. The top insulator and the bottom insulator are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one or more of the top insulator and the bottom insulator are coated with a protective layer configured to prevent thermal shrinkage from occurring.

Abstract: The present invention relates to an electrode tab welding apparatus for welding electrode tabs of a pouch-shaped battery to each other in a state of gathering the electrode tabs using tab guides in a preliminary welding step of welding the electrode tabs to each other before welding the electrode tabs and an electrode lead of the pouch-shaped battery to each other and an electrode tab welding method using the same.

Abstract: A wafer level package includes: a substrate; an element portion disposed on one surface of the substrate; a cap disposed on the substrate to cover the element portion; a connection portion electrically connected to the element portion; and a bonding portion disposed on an outer side of the connection portion, wherein the bonding portion is disposed on a first surface of one of the substrate and the cap, wherein one end portion of the connection portion is disposed on a second surface having a step difference from the first surface, and wherein the connection portion and the bonding portion are formed of a eutectic material.

Abstract: A non-volatile memory device including a substrate including a first area and a second area, a mold structure on the substrate, the mold structure including gate electrodes and mold insulating films alternately stacked on each other in a stepwise manner, an interlayer insulating film covering the mold structure, a channel structure on the first area, the channel structure extending through the mold structure and connected to the gate electrodes, and a through-contact on the second area and extending through the interlayer insulating film, the through-contact including a first portion in a first trench and a second portion in a second trench, the first portion including a liner film along a sidewall and a bottom surface of the first trench and a filling film on the liner film, wherein the filling film being a multi-grain conductive material, and the second portion being a single grain conductive material, may be provided.

Abstract: Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a metal layer on the lower metal oxide layer, an upper metal oxide layer on the metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Abstract: A display is provided. The display device includes a display area and a non-display area located around the display area; a base layer; an organic light-emitting diode (OLED) that is located on the base layer in the display area; and a first crack detection line that is located on the base layer in the non-display area; wherein the first crack detection line comprises a first line that extends substantially in a first direction along a first edge of the display area, a second line that is separated from the first line and extends substantially in the first direction, and a third line that is connected to an end of the first line and an end of the second line, wherein a cross-sectional shape of the first line in a second direction crossing the first direction is inversely tapered.