Abstract: An intelligent window includes two substrates and a dimming layer. Each substrate is electrically connected to a voltage source. A switchable electric field is formed between the two substrates. The dimming layer is formed by filling a liquid crystal material between the two substrates. The liquid crystal material is formed by mixing a chiral molecule, a dichroic dye, and a salt ion in a nematic liquid crystal. A weight percentage concentration of the chiral molecule in the liquid crystal material is determined according to a limitation formula (I). C is the weight percentage concentration, n is a birefringence index of the liquid crystal material, p is a chiral force of the chiral molecule in micrometer?1, D is a thickness of the dimming layer in micrometer, m1 is a constant of multiaxial absorption condition in micrometer, and m2 is a constant of normally transparent condition.

Abstract: A semiconductor package includes a first heat dissipation plate, a second heat dissipation plate, a plurality of heat generating assemblies, and a plurality of fixture components. The first heat dissipation plate has a first upper surface and a first lower surface. The first heat dissipation plate includes first through holes extended from the first upper surface to the first lower surface. The second heat dissipation plate has a second upper surface and a second lower surface. The second heat dissipation plate includes second through holes extended from the second upper surface to the second lower surface. The heat generating assemblies are disposed between the first heat dissipation plate and the second heat dissipation plate. The fixture components include fix screws and nuts. The fix screws penetrate through the first heat dissipation plate and the second heat dissipation plate along the first through holes and the second through holes.

Abstract: A touch screen may be formed from a display and perimeter touch electrodes. Touches detected at one or more of the perimeter touch electrodes can be imputed to touch on a region of the display of the touch screen adjacent to the perimeter touch electrodes. In some examples, the perimeter touch electrodes comprise segmented frit metal arranged around the perimeter of the display (e.g., frit metal used to encapsulate the display). In some examples, the perimeter touch electrodes can be coupled to one or more touch sensing circuits via switching circuitry. In some examples, the switching circuitry can be operated based on control signals shared with the display circuitry.

Abstract: Structures with doping free connections and methods of fabrication are provided. An exemplary structure includes a substrate; a first region of a first conductivity type formed in the substrate; an overlying layer located over the substrate; a well region of a second conductivity type formed in the overlying layer; a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region; and a passivation layer located between the conductive plug and the well region.

Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Abstract: A device includes a substrate; semiconductor fins extending from the substrate; a liner layer on sidewalls of the semiconductor fins; an etch stop layer over the substrate and extending laterally from a first portion of the liner layer on a first one of the semiconductor fins to a second portion of the line layer on a second one of the semiconductor fins; an isolation structure over the etch stop layer, wherein the etch stop layer and the isolation structure include different materials; a gate dielectric layer over a top surface of the isolation structure; and a dielectric feature extending through the gate dielectric layer and into the isolation structure, wherein the isolation structure and the dielectric feature collectively extend laterally from the first portion of the liner layer to the second portion of the line layer.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.

Abstract: A dynamic object monitoring method including, setting types of monitored zones of a monitored region in a video frame captured by a network camera and setting device parameters and sensitivity values corresponding to each of the monitored zones. Analyzing the predicted macro blocks of a current shooting frame retrieved by the network camera according to the prediction mode of the MPEG-4 encoding algorithm. Counting a number of the predicted macro blocks of each of the monitored zones. Determining whether a number of predicted macro blocks of a monitored zone is equal to or greater than a corresponding preset value. A monitored zone is determined where a dynamic object is located. The device parameters of the network camera as device parameters of the monitored zone are adjusted where the dynamic object is located for recording.

Abstract: A method for controlling a docking apparatus using a portable electronic device permits enhanced functionality for the portable electronic device. In the control method, the docking apparatus receives I2C messages in a first byte format from the portable electronic device over a first I2C bus. The docking apparatus translates the I2C message from the first byte format to a second byte format and transmits the translated I2C message over a second I2C bus to an I2C-compatible device.

Abstract: A dynamic object monitoring method including, setting types of monitored zones of a monitored region in a video frame captured by a network camera and setting device parameters and sensitivity values corresponding to each of the monitored zones. Analyzing the predicted macro blocks of a current shooting frame retrieved by the network camera according to the prediction mode of the MPEG-4 encoding algorithm. Counting a number of the predicted macro blocks of each of the monitored zones. Determining whether a number of predicted macro blocks of a monitored zone is equal to or greater than a corresponding preset value. A monitored zone is determined where a dynamic object is located. The device parameters of the network camera as device parameters of the monitored zone are adjusted where the dynamic object is located for recording.

Abstract: A set-top box receives a multimedia program from a headend server. The multimedia program includes a video content and a plurality of corresponding audio contents each corresponding to a sign. The set-top box transmits the video content and one of the audio contents to a multimedia playing device. The set-top box connects to each earphone, transmits the signs corresponding to the audio contents to each earphone, and receives one of the signs and the corresponding unique identifier from each earphone. The set-top box transmits one of the audio contents corresponding to the received sign to one of the earphones according to the received corresponding unique identifier.

Abstract: Digital media controller and a method for sharing media data include setting an account and a password. The method further includes when the second DMC sending input account and input password and logging on legally, searching and storing first shared media data in a first DMS into the shared folder and informing the second DMC to obtain a list of the first shared media data from the shared folder. The method further includes sending the first shared media data using a stream packet to the second DLNA network, in response that the first DLNA network receiving a request of accessing the first shared media data in the shared folder from the second DLNA network through a VPN.

Abstract: A method for generating feedback signal in a device includes steps of receiving user input, and setting resolution of the device and media types of the television signals according to the user input; tuning a channel according to the user input to receive channel signals; decoding the channel signals; counting a period; detecting whether the device receives television signals; detecting whether an interrupt instruction is received if the device does not receive the television signals; generating a feedback signal according to the interrupt instruction if the interrupt instruction is received, and transmitting the feedback signal to a media server if the interrupt instruction is received.

Abstract: A method for generating feedback signal in a device includes steps of receiving user input; tuning a channel according to the user input; decoding channel signals; counting a period; detecting whether the device receives television signals; detecting whether an interrupt instruction is received if the device does not receive the television signals; generating a feedback signal according to the interrupt instruction, and transmitting the feedback signal to a media server if the interrupt instruction is received.

Abstract: A MOSFET can operate as a resistor by operating in the linear or ohmic region of the drain V-I characteristics. This region can be obtained by floating the gate of the MOSFET, when the dc current and the voltage drop are given. Multiple resistors can be duplicated (or mirrored) by sharing the same source and floating gate. The floating gate voltage can be simulated using a closed loop equivalent circuit. Alternatively, the gate voltage can also be derived from the given drain-to-source voltage and the given current in a feedback loop. With this adaptive MOSFET resistor, the minimum supply voltage can be as low as the sum of the BJT threshold and the complementary BJT saturation voltage, e.g. VCC?VBE+Vsat (e.g. 0.8+0.15<1.0V). The threshold voltage Vt should be less than VBE.

Abstract: A BJT operating as a mixer has its collector biased at the knee of the IC vs VCE characteristic. A local oscillator voltage is applied to the base and an RF signal voltage is applied to the collector through a singled-ended emitter follower. The nonlinear curvature at the knee produces a beat frequency current. The base of the emitter follower can be fed from a current mirror or through an ohmic resistor. This mixer requires less supply voltage, and results in more conversion gain and less feed-through of the RF input signal than the Gilbert multiplier. Alternatively, the RF voltage can be applied to the gate and the local oscillator voltage can be applied to the drain. Sometimes, it is more desirable to invert the collector and the emitter, or to connect a normal transistor and an inverted transistor in parallel to optimize conversion gain.

Abstract: An integrated circuit is divided into a number of sub-circuits by isolation walls in the substrate. A conducting shield overlays every sub-circuit to form a grounded cage with the underlying substrate for trapping electromagnetic radiation generated inside the sub-circuit, and to prevent cross-talk between the sub-circuits.

Abstract: An ac input voltage is fed to one input of a multiplier serving phase comparator of a phase-locked loop. The output voltage of the VCO feeding the second input of the phase comparator to lock the frequency has a &pgr;/4 phase shift with respect to the input voltage. When two such phase locked loops are connected in tandem, a &pgr;/2 quadrature voltage is obtained. When more than two phase-locked loops are connected in tandem, any multiples of &pgr;/4 phase shift can be obtained.

Abstract: Two resonant tunneling diodes with hysteretic folding V-I characteristics are connected in series. The node voltage and the series current of the cell determine the memory state and there can be a large number of states. During writing, one writing pulse sets the pull-down RTD to one of the positive differential resistance region of the hysteretic V-I characteristic, and a second writing pulse sets the pull-up RTD to one of positive differential resistance region. During writing, the series current is sensed by measuring the colon ground current.