Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: Composite dielectric structures for semiconductor die assemblies, and associated systems and methods are disclosed. In some embodiments, the composite dielectric structure includes a flexible dielectric layer configured to conform to irregularities (e.g., particles, defects) at a bonding interface of directly bonded semiconductor dies (or wafers). The flexible dielectric layer may include a polymer material configured to deform in response to localized pressure generated by the irregularities during bonding process steps. The composite dielectric structure includes additional dielectric layers sandwiching the flexible dielectric layer such that the composite dielectric structure can provide robust bonding strength to other dielectric layers through the additional dielectric layers. In some embodiments, a chemical vapor deposition process may be used to form the composite dielectric structure utilizing siloxane derivatives as a precursor.

Abstract: The present disclosure is directed to a semiconductor device. The semiconductor device includes a substrate, an insulating layer disposed on the substrate, a first conductive feature disposed in the insulating layer, and a capacitor structure disposed on the insulating layer. The capacitor structure includes a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked. The semiconductor device also includes a first via connected to the first electrode and the third electrode, a second via connected to the second electrode, and a third via connected to the first conductive feature. A part of the first via is disposed in the insulating layer. A portion of the first conductive feature is directly under the capacitor structure.

Abstract: A waterproof zipper is provided with two halves, each including a half tape member and a row of protruding teeth along an inner edge of the half tape member; and a waterproof layer is secured to an inner surface of the halves. A process of manufacturing the waterproof zipper is also provided, including the steps of: (a) guiding the waterproof layer to a position above the two halves on a continuous flow production line, each half having a half tape member and a row of protruding teeth along an inner edge of the half tape member; (b) coating a waterproof layer on a releasing layer; (c) drying both the waterproof layer and the releasing layer in an oven.

Abstract: A waterproof zipper is provided with two halves, each including a half tape member and a row of protruding teeth along an inner edge of the half tape member; and a waterproof layer is secured to an inner surface of the halves. The waterproof layer coated on the inner surfaces of the halves may prevent the liquid from penetrating into the interior of the waterproof zipper, and simplify the structure of the waterproof zipper. A process of manufacturing the waterproof zipper is also provided.

Abstract: A waterproof zipper is provided with two halves, each including a half tape member and a row of protruding teeth along an inner edge of the half tape member; and a waterproof layer is secured to an inner surface of the halves. A process of manufacturing the waterproof zipper is also provided.

Abstract: A waterproof structure for zippers includes a waterproof layer formed on one side surface of two tapes of a half-finished zipper. The waterproof layer is formed by coating a layer of bonding glue on the one side surface of the two tapes and then the bonding glue has its upper layer stuck with an electroplating membrane. By so designing, external water can be prevented from seeping in the two tapes of the zipper, thus elevating waterproof effect of a zipper.

Abstract: A waterproof structure for zippers includes a waterproof layer formed on one side surface of two tapes of a half-finished zipper. The waterproof layer is formed by coating a layer of bonding glue on the one side surface of the two tapes and then the bonding glue has its upper layer stuck with an electroplating membrane. By so designing, external water can be prevented from seeping in the two tapes of the zipper, thus elevating waterproof effect of a zipper.