Abstract: A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using through mold vias (TMVs) is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die is formed. A through mold via (TMV) electrically coupled with the integrated circuit die and extending between a top surface of the housing and the integrated circuit die is formed. The structure resulting from application of the method is also provided.

Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

Abstract: A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using wire bonds is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A conductive stud or external wire bond electrically coupled with the integrated circuit die and extending vertically up is formed. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die, and with a top surface approximately coplanar with a top surface of the conductive stud or external wire bond, is formed. The structure resulting from application of the method is also provided.

Abstract: A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using through mold vias (TMVs) is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die is formed. A through mold via (TMV) electrically coupled with the integrated circuit die and extending between a top surface of the housing and the integrated circuit die is formed. The structure resulting from application of the method is also provided.

Abstract: A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using wire bonds is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A conductive stud or external wire bond electrically coupled with the integrated circuit die and extending vertically up is formed. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die, and with a top surface approximately coplanar with a top surface of the conductive stud or external wire bond, is formed. The structure resulting from application of the method is also provided.

Abstract: A method of forming a semiconductor device includes bonding a capping wafer and a base wafer to form a wafer package. The base wafer includes a first chip package portion, a second chip package portion, and a third chip package portion. The capping wafer includes a plurality of isolation trenches. Each isolation trench of the plurality of isolation trenches is substantially aligned with a corresponding trench region of one of the first chip package portion, the second chip package portion or the third chip package portion. The method also includes removing a portion of the capping wafer to expose a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact. The method further includes separating the wafer package into a first chip package configured to perform a first operation, a second chip package configured to perform a second operation, and a third chip package configured to perform a third operation.

Abstract: A vacuum sealed MEMS and CMOS package and a process for making the same may include a capping wafer having a surface with a plurality of first cavities, a first device having a first surface with a second plurality of second cavities, a hermetic seal between the first surface of the first device and the surface of the capping wafer, and a second device having a first surface bonded to a second surface of the first device. The second device is a CMOS device with conductive through vias connecting the first device to a second surface of the second device, and conductive bumps on the second surface of the second device. Conductive bumps connect to the conductive through vias and wherein a plurality of conductive bumps connect to the second device. The hermetic seal forms a plurality of micro chambers between the capping wafer and the first device.

Abstract: An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.

Abstract: A method of forming a semiconductor device having through molding vias includes eutectic bonding a capping wafer and a base wafer to form a wafer package. The base wafer includes a first chip package portion, a second chip package portion, and a third chip package portion. The capping wafer includes a plurality of isolation trenches and a plurality of separation trenches having a depth greater than the isolation trenches with respect to a same surface of the capping wafer. The method also includes removing a portion of the capping wafer exposing a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact. The method further includes separating the wafer package to separate the wafer package into a first chip package, a second chip package, and a third chip package.

Abstract: An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.

Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

Abstract: A micro electromechanical system (MEMS) device includes a MEMS section attached to a substrate, and a cap bonded to a first surface of the substrate. The MEMS device further includes a carrier bonded to a second surface of the substrate opposite the first surface, wherein the carrier is free of active devices, and the cap and the carrier define a vacuum region surrounding the MEMS section. The MEMS device further includes a bond pad on a surface of the carrier opposite the MEMS section, wherein the bond pad is electrically connected to the MEMS section.

Abstract: A method of forming a semiconductor device having through molding vias comprises eutectic bonding a capping wafer and a base wafer to form a wafer package. The base wafer comprises a first chip package portion, a second chip package portion, and a third chip package portion. The capping wafer comprises a plurality of isolation trenches and a plurality of separation trenches having a depth greater than the isolation trenches with respect to a same surface of the capping wafer. The method also comprises removing a portion of the capping wafer exposing a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact. The method further comprises separating the wafer package to separate the wafer package into a first chip package, a second chip package, and a third chip package.

Abstract: A method of forming a semiconductor device comprises bonding a capping wafer and a base wafer to form a wafer package. The base wafer comprises a plurality of chip package portions. The capping wafer comprises a plurality of isolation trenches. Each isolation trench of the plurality of isolation trenches is configured to substantially align with a corresponding chip package portion of the plurality of chip package portions. The method also comprises separating the wafer package into a plurality of chip packages. Each chip package of the plurality of chip packages comprises at least one chip package portion of the plurality of chip package portions.

Abstract: A method of forming a semiconductor device comprises forming a base wafer comprising a first chip package portion, a second chip package portion, and a third chip package portion. The method also comprises forming a capping wafer comprising a plurality of isolation trenches, each of the plurality of isolation trenches being configured to substantially align with one of the first chip package portion, the second chip package portion or the third chip package portion. The method further comprises eutectic bonding the capping wafer and the base wafer to form a wafer package. The method additionally comprises dicing the wafer package into a first chip package, a second chip package, and a third chip package. The method also comprises placing the first chip package, the second chip package, and the third chip package onto a substrate.

Abstract: An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.