Patents by Inventor Hung-Chia Wang
Hung-Chia Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145569Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a first channel, a first source and a first drain; a second channel, a second source and a second drain; and a gate structure disposed over the first and second channels. The gate structure includes a gate dielectric layer and a gate electrode layer. The first source includes a first crystal semiconductor layer and the second source includes a second crystal semiconductor layer. The first source and the second source are connected by an alloy layer made of one or more Group IV element and one or more transition metal elements. The first crystal semiconductor layer is not in direct contact with the second crystal semiconductor layer.Type: ApplicationFiled: January 4, 2024Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yee-Chia YEO, Sung-Li WANG, Chi On CHUI, Jyh-Cherng SHEU, Hung-Li CHIANG, I-Sheng CHEN
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Patent number: 11652193Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.Type: GrantFiled: October 29, 2020Date of Patent: May 16, 2023Assignee: Lextar Electronics CorporationInventors: Yi-Ting Tsai, Hung-Chia Wang, Chia-Chun Hsieh, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
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Publication number: 20220291551Abstract: A wavelength conversion material comprises a luminous core and a covering layer. The luminous core comprises a quantum dot or a fluorescent powder. The covering layer covers the luminous core. The covering layer is an amorphous material, and an outer surface of the covering layer has at least one sharp corner.Type: ApplicationFiled: February 14, 2022Publication date: September 15, 2022Inventors: Yi-Ting TSAI, Hung-Chia WANG, Chia-Chun HSIEH, Pei-Cong YAN, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
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Patent number: 11294238Abstract: A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.Type: GrantFiled: October 29, 2020Date of Patent: April 5, 2022Assignee: Lextar Electronics CorporationInventors: Kiet Tuong Ly, Fu-Hsin Chen, Yi-Ting Tsai, Hung-Chia Wang, Chia-Chun Hsieh, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
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Patent number: 11245056Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.Type: GrantFiled: November 28, 2019Date of Patent: February 8, 2022Assignee: Lextar Electronics CorporationInventors: Chang-Zhi Zhong, Hung-Chia Wang, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
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Publication number: 20220029067Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.Type: ApplicationFiled: October 29, 2020Publication date: January 27, 2022Inventors: Yi-Ting TSAI, Hung-Chia WANG, Chia-Chun HSIEH, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
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Publication number: 20210288227Abstract: The wavelength conversion material includes a general formula (I) MmAaBbCcDdEe:ESxREy and satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements O, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.Type: ApplicationFiled: September 26, 2020Publication date: September 16, 2021Inventors: Yi-Ting TSAI, Hung-Chia WANG, Chia-Chun HSIEH, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
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Publication number: 20210167257Abstract: A light conversion material includes a general formula and complies with a condition. The general formula is MmAaCcEe:ESxREy. M is at least one element selected from a group, and 2?m?3. A is at least one element selected from a group, and 0.01?a?1. C is at least one element selected from a group, and 1?c?9, E is at least one element selected from a group, and 5?e?7. ES is at least one element selected from a group, and 0?x?3. RE is at least one element selected from a group, and 0?y?3. The condition (2) is m+x+y=3.Type: ApplicationFiled: September 7, 2020Publication date: June 3, 2021Inventors: Yi-Ting TSAI, Hung-Chia WANG, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
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Publication number: 20210126167Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.Type: ApplicationFiled: November 28, 2019Publication date: April 29, 2021Inventors: Chang-Zhi ZHONG, Hung-Chia WANG, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
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Patent number: 10816716Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.Type: GrantFiled: August 23, 2019Date of Patent: October 27, 2020Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
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Patent number: 10808172Abstract: A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.Type: GrantFiled: September 11, 2019Date of Patent: October 20, 2020Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Zhen Bao, Yu-Jui Tseng, Ru-Shi Liu, Hung-Chun Tong, Hung-Chia Wang, Yu-Chun Lee, Tzong-Liang Tsai
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Publication number: 20200248070Abstract: A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.Type: ApplicationFiled: September 11, 2019Publication date: August 6, 2020Inventors: Zhen BAO, Yu-Jui TSENG, Ru-Shi LIU, Hung-Chun TONG, Hung-Chia WANG, Yu-Chun LEE, Tzong-Liang TSAI
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Patent number: 10689569Abstract: An overcoating inorganic quantum dot and a method for preparing the same are provided. The overcoating inorganic quantum dot includes at least one perovskite quantum dot with an oxide overcoat. The method includes forming the perovskite quantum dots, and overcoating an oxide overcoat on the perovskite quantum dots.Type: GrantFiled: July 21, 2017Date of Patent: June 23, 2020Assignee: Taiwan Hopax Chemicals Mfg. Co., Ltd.Inventors: Hung-Chia Wang, An-Cih Tang, Hsin-Yu Tsai, Ru-Shi Liu, Ping-Hung Lin, Wen-Wei Chien, Li-Jane Her
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Publication number: 20190383990Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.Type: ApplicationFiled: August 23, 2019Publication date: December 19, 2019Inventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
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Patent number: 10436973Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.Type: GrantFiled: November 28, 2016Date of Patent: October 8, 2019Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
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Publication number: 20180037815Abstract: An overcoating inorganic quantum dot and a method for preparing the same are provided. The overcoating inorganic quantum dot includes at least one perovskite quantum dot with an oxide overcoat. The method includes forming the perovskite quantum dots, and overcoating an oxide overcoat on the perovskite quantum dots.Type: ApplicationFiled: July 21, 2017Publication date: February 8, 2018Applicant: Taiwan Hopax Chemicals Mfg. Co., Ltd.Inventors: Hung-Chia Wang, An-Cih Tang, Hsin-Yu Tsai, Ru-Shi Liu, Ping-Hung Lin, Wen-Wei Chien, Li-Jane Her
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Publication number: 20170153382Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.Type: ApplicationFiled: November 28, 2016Publication date: June 1, 2017Inventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
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Publication number: 20170155020Abstract: A wavelength-converting material and an application thereof are provided. The wavelength-converting material includes an all-inorganic perovskite quantum dot having a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.Type: ApplicationFiled: November 22, 2016Publication date: June 1, 2017Inventors: Shin-Ying Lin, Hung-Chia Wang, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
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Patent number: 8260074Abstract: An apparatus and a method for measuring the depth of an object in a scene and a method for computing image defocus and blur status are provided. An image analysis unit receives a plurality of reference blurred images, analyzes the reference blurred images, produces reference grey-scale distribution data, where the reference blurred images corresponds to a plurality of reference depths, respectively. A blur comparison module produces a blur model according to the reference grey-scale distribution data and the corresponding reference depths. The image analysis unit receives a target blurred image, analyzes the target blurred image, and produces and transmits target grey-scale distribution data to the blur comparison module for comparing the target grey-scale distribution data according to the blur model, and producing depth information. Moreover, the present invention further produces the corresponding blur status data, used in defocus and blur computations, according to the defocused and blurred image.Type: GrantFiled: July 28, 2009Date of Patent: September 4, 2012Assignee: National Chung Cheng UniversityInventors: Huei-Yung Lin, Kai-Da Gu, Hung-Chia Wang
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Publication number: 20100310176Abstract: An apparatus and a method for measuring the depth of an object in a scene and a method for computing image defocus and blur status are provided. An image analysis unit receives a plurality of reference blurred images, analyzes the reference blurred images, produces reference grey-scale distribution data, where the reference blurred images corresponds to a plurality of reference depths, respectively. A blur comparison module produces a blur model according to the reference grey-scale distribution data and the corresponding reference depths. The image analysis unit receives a target blurred image, analyzes the target blurred image, and produces and transmits target grey-scale distribution data to the blur comparison module for comparing the target grey-scale distribution data according to the blur model, and producing depth information. Moreover, the present invention further produces the corresponding blur status data, used in defocus and blur computations, according to the defocused and blurred image.Type: ApplicationFiled: July 28, 2009Publication date: December 9, 2010Inventors: Huei-Yung LIN, Kia-Da Gu, Hung-Chia Wang