Abstract: A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a layer stack over a substrate, where the layer stack includes alternating layers of a first dielectric material and a word line (WL) material; forming first trenches extending vertically through the layer stack; filling the first trenches, where filling the first trenches includes forming, in the first trenches, a ferroelectric material, a channel material over the ferroelectric material, and a second dielectric material over the channel material; after filling the first trenches, forming second trenches extending vertically through the layer stack, the second trenches being interleaved with the first trenches; and filling the second trenches, where filling the second trenches includes forming, in the second trenches, the ferroelectric material, the channel material over the ferroelectric material, and the second dielectric material over the channel material.

Abstract: A method of forming a three-dimensional (3D) memory device includes: forming, over a substrate, a layer stack having alternating layers of a first conductive material and a first dielectric material; forming trenches extending vertically through the layer stack from an upper surface of the layer stack distal from the substrate to a lower surface of the layer stack facing the substrate; lining sidewalls and bottoms of the trenches with a memory film; forming a channel material over the memory film, the channel material including an amorphous material; filling the trenches with a second dielectric material after forming the channel material; forming memory cell isolation regions in the second dielectric material; forming source lines (SLs) and bit lines (BLs) that extend vertically in the second dielectric material on opposing sides of the memory cell isolation regions; and crystallizing first portions of the channel material after forming the SLs and BLs.

Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.

Abstract: Provided is a method for treating a cancer in a subject in need thereof. The method comprises administering to the subject an anti-PD-1 agent in combination with one or more anticancer agents.

Abstract: Provided is a method for treating a cancer in a subject in need thereof. The method comprises administering to the subject an anti-PD-1 agent in combination with one or more anticancer agents.

Abstract: Systems and method for reading data samples in reverse group order are described herein according to various embodiments of the present disclosure. In one embodiment, a method for reading data samples in a memory is provided, wherein the data samples correspond to an operand of a vector operation, the data samples are grouped into a plurality of different groups, and the different groups are spaced apart by a plurality of addresses in the memory. The method comprises reading the groups of data samples in reverse group order, and, for each group, reading the data samples in the group in forward order.

Abstract: Systems and methods for generating twiddle factors are described herein according to various embodiments of the present disclosure. In one embodiment, a method for twiddle factor generation comprises generating a first twiddle phase, wherein the first twiddle phase is from a set of radix-M1 twiddle phases, and M1 is an integer. The method also comprises converting the first twiddle phase into a second twiddle phase, wherein the second twiddle phase is from a set of radix-M2 twiddle phases, and M2 is an integer that is different from M1. The method further comprises generating a twiddle factor based on the second twiddle phase.

Abstract: Systems and method for reading data samples in reverse group order are described herein according to various embodiments of the present disclosure. In one embodiment, a method for reading data samples in a memory is provided, wherein the data samples correspond to an operand of a vector operation, the data samples are grouped into a plurality of different groups, and the different groups are spaced apart by a plurality of addresses in the memory. The method comprises reading the groups of data samples in reverse group order, and, for each group, reading the data samples in the group in forward order.

Abstract: An optical recognition pattern for length measurement is mounted on an optical contact surface and includes a plurality of optical recognition units, each of which corresponds to a length value. The sequence of the optical recognition units on the optical contact surface is consistent with that of the corresponding length values in such a way that the optical recognition pattern imitating the conventional measuring ruler can be constituted. Besides, the optical recognition pattern can further work with an optical recognition device to constitute a length measurement system that the optical recognition is applied to.

Abstract: An optical recognition pattern for length measurement is mounted on an optical contact surface and includes a plurality of optical recognition units, each of which corresponds to a length value. The sequence of the optical recognition units on the optical contact surface is consistent with that of the corresponding length values in such a way that the optical recognition pattern imitating the conventional measuring ruler can be constituted. Besides, the optical recognition pattern can further work with an optical recognition device to constitute a length measurement system that the optical recognition is applied to.

Abstract: A scaling device for an image processor includes an image enlarging device and an integer divider. The image enlarging device receives an input image data, and enlarges the input image data, outputting an enlarging image data and a sample signal. The integer divider receives the enlarging image data, and samples the enlarging image data, outputting an object image data. By only adding an external integer divider at the output of the image enlarging device for obtain the scaling function of the image processor, a simpler circuit for image scaling is presented.

Abstract: A scaling device of image process comprises an image Enlarging device and an integer divider; wherein the image enlarging device receives an input image data, and enlarges the input image data, outputting an enlarging image data and a sample signal; wherein the integer divider receives the enlarging image data, and samples the enlarging image data, outputting an object image data. According to only add an external integer divider provided out of the image enlarging device for obtain the scaling function of image process, the simpler circuit of image scaling is presented.

Abstract: A ventilator hood for a stove includes a separator, a housing having a back plate, a top plate and two side plates and an inlet formed by an inclined bottom plate and a hood. A passage is defined between the hood and the inclined bottom plate. A guiding plate is attached to the hood and has a groove defined therein. A W-shaped screen is attached to the guiding plate in the passage. The inclined bottom plate and the back plate form the separator having a drain hose, an oil hose and an inlet hose attached thereto. The inlet hose includes at least one branch with each having a nozzle attached thereto. A deflector plate corresponding to each nozzle is attached to the groove in order to form a water curtain when the water spouts from the nozzle.

Abstract: A ventilator hood includes a hood body having a first lengthwise wall, a second lengthwise wall, and a bottom wall. A bottom plate extends from a lower portion of the second lengthwise wall. A supporting plate extends upwardly from the bottom plate. An upright plate extends downwardly from the bottom wall, and an inlet opening is defined between the upright plate and the supporting plate. A spraying device includes an L-shaped plate having a vertical section extending downwardly from the bottom wall. A baffle extends upwardly from a horizontal section of the L-shaped plate and a space is defined between the L-shaped plate and the baffle. A passage is defined between the baffle and the upright plate. A wiper plate extends downwardly from a lower portion of the baffle and a channel is defined between the wiper plate and the supporting plate.