Abstract: An integrated circuit structure is provided. The integrated circuit structure includes a die that contains a substrate, an interconnection structure, active connectors and dummy connectors. The interconnection structure is disposed over the substrate. The active connectors and the dummy connectors are disposed over the interconnection structure. The active connectors are electrically connected to the interconnection structure, and the dummy connectors are electrically insulated from the interconnection structure.

Abstract: An apparatus (e.g., an access point (AP) or a non-AP station (STA)) detects a non-primary subband of an operating bandwidth comprising a primary subband and the non-primary subband to be idle. The apparatus controls a transmit power in performing transmission on at least the non-primary subband.

Abstract: A multi-phase coupled inductor includes a first iron core, a second iron core, and a plurality of coil windings. The first iron core includes a first body and a plurality of first core posts. The plurality of first core posts are connected to the first body. The second iron core is opposite to the first iron core. The second iron core and the first body are spaced apart from each other by a gap. The plurality of coil windings wrap around the plurality of first core posts, respectively. Each of the coil windings has at least two coils.

Abstract: An access point (AP) and a station (STA) communicate with each other, with the AP indicating to the STA either or both of a preamble detection (PD) channel and a signaling (SIG) content channel and with the STA being initially monitoring a primary frequency segment of a plurality of frequency segments in an operating bandwidth of the AP. A downlink (DL) or triggered uplink (UL) communication is performed between the AP and the STA during a transmission opportunity (TXOP) such that: (i) during the TXOP, the STA monitors a preamble on the PD channel and decodes a SIG content on the SIG content channel; and (ii) after an end of the TXOP, the STA switches to the primary frequency segment.

Abstract: A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.

Abstract: A heat dissipation structure of lighting devices is disclosed, which comprises a light emitting mechanism; a carbon nanoparticles which have hexagonal carbon ring geometry based heat dissipation unit, combined with an end of the light emitting mechanism; and a socket, electrically connected to the light emitting mechanism, and combined with an end of the carbon nanoparticles which have hexagonal carbon ring geometry based heat dissipation unit. As such, a thermal transmission efficiency is promoted, a thermal transfer bottleneck is effectively decreased, heat sink is never necessary, a heat dissipation cost is largely reduced, a volume and weight of the device is reduced, and a waste of the raw material, carbon, and energy consumption can be reduced.

Abstract: A heat dissipation structure of lighting devices is disclosed, which comprises a light emitting mechanism; a carbon nanoparticles which have hexagonal carbon ring geometry based heat dissipation unit, combined with an end of the light emitting mechanism; and a socket, electrically connected to the light emitting mechanism, and combined with an end of the carbon nanoparticles which have hexagonal carbon ring geometry based heat dissipation unit. As such, a thermal transmission efficiency is promoted, a thermal transfer bottleneck is effectively decreased, heat sink is never necessary, a heat dissipation cost is largely reduced, a volume and weight of the device is reduced, and a waste of the raw material, carbon, and energy consumption can be reduced.

Abstract: A thermal transfercatalytic heat dissipation method is disclosed, comprises steps of disposing a thermal transfer interface on a heat source; and disposing a carbon nanoparticles which have a hexagonal carbon ring geometry based heat dissipation film on at least a face of the thermal transfer interface, so that the hexagonal carbon ringed nanometer heat dissipation film dissipates the heat source after the thermal transfer interface absorbs the heat source, so that the heat is directed effectively to the ambient through the film, avoiding a thermal transfer drop between the thermal transfer interface and the air, and achieving in that a thermal transfer effectiveness is promoted, a thermal transfer bottleneck is effectively reduced, heat dissipation fins are saved, a heat dissipation cost is largely reduced, a volume and weight is reduced, a consumption of the raw material is reduced and a purpose of energy saving and carbon reduction is achieved.

Abstract: A thermal transfer catalytic heat dissipation structure is disclosed, which comprises a thermal conductive carrier; a heat source which disposed on a face of the thermal conductive carrier; and a carbon nanoparticles which have hexagonal carbon ring geometry based heat dissipation film, at least disposed on the other face of the thermal conductive carrier. A carbon nanoparticles which have hexagonal carbon ring geometry based heat dissipation film is used to dissipate a heat source when a thermal conductive carrier absorbs the heat from heat source, so that the heat is effectively transferred to the ambient through the film, avoiding a thermal transfer gap with respect to the ambient (like as air).

Abstract: A Mach-Zehnder wavelength division multiplexer (WDM) is provided. The WDM has a short length with flat passband and low crosstalk. Since passband is flattened, crosstalk is reduced and length of the WDM is shortened, the WDN can be used for optical communication and optical interconnection in a single chip.

Abstract: A single-stage 1×5 grating-assisted wavelength division multiplexer is provided. A grating-assisted asymmetric Mach-Zehnder interferometer, a plurality of grating-assisted cross-state directional couplers and a plurality of novel side-band eliminators are combined to form the multiplexer. Only general gratings are required, not Bragg grating, for 5-channel wavelength division multiplexing in a single stage. A nearly ideal square-like band-pass filtering passband is obtained. The present disclosure can be used as a core device in IC-to-IC optical interconnects for multiplexing and demultiplexing of an optical transceiver. The present disclosure has a small size and good performance.

Abstract: A wavelength division multiplexing and optical modulation apparatus includes at least two modulation region-added grating-assisted cross-state directional coupler units and a modulation region-added cross-state directional coupler. The modulation region-added grating-assisted cross-state directional coupler units and the modulation region-added cross-state directional coupler unit are connected to one another in serial. Each of the modulation region-added grating-assisted cross-state directional coupler units each includes a modulation region-added cross-state directional coupler, a grating and a modulation region. The modulation region-added cross-state directional coupler unit includes an output waveguide, an input waveguide and a modulation region.

Abstract: A low-loss optical coupling apparatus includes a silicon-on-insulator wafer, a silicon dioxide layer, a taper waveguide, a channel waveguide and a thick-film silicon dioxide layer. The silicon-on-insulator wafer is formed with a silicon substrate. The silicon dioxide layer is provided on the silicon substrate. The taper waveguide comprises a slab region formed on the silicon dioxide layer and a waveguide region formed on the slab region. An end of a chip is connected to an end of the waveguide region. The channel waveguide is formed on the slab region and connected to another end of the waveguide region. The thick-film silicon dioxide layer extends on the taper waveguide and covers the entire waveguide region.

Abstract: A Mach-Zehnder wavelength division multiplexer (WDM) is provided. The WDM has a short length with flat passband and low crosstalk. Since passband is flattened, crosstalk is reduced and length of the WDM is shortened, the WDN can be used for optical communication and optical interconnection in a single chip.

Abstract: A single-stage 1×5 grating-assisted wavelength division multiplexer is provided. A grating-assisted asymmetric Mach-Zehnder interferometer, a plurality of grating-assisted cross-state directional couplers and a plurality of novel side-band eliminators are combined to form the multiplexer. Only general gratings are required, not Bragg grating, for 5-channel wavelength division multiplexing in a single stage. A nearly ideal square-like band-pass filtering passband is obtained. The present disclosure can be used as a core device in IC-to-IC optical interconnects for multiplexing and demultiplexing of an optical transceiver. The present disclosure has a small size and good performance.

Abstract: A wavelength division multiplexing and optical modulation apparatus includes at least two modulation region-added grating-assisted cross-state directional coupler units and a modulation region-added cross-state directional coupler. The modulation region-added grating-assisted cross-state directional coupler units and the modulation region-added cross-state directional coupler unit are connected to one another in serial. Each of the modulation region-added grating-assisted cross-state directional coupler units each includes a modulation region-added cross-state directional coupler, a grating and a modulation region. The modulation region-added cross-state directional coupler unit includes an output waveguide, an input waveguide and a modulation region.

Abstract: A grating device has a waveguide array cyclically arranged. A horned waveguide is used in a star coupler of the grating device. An optical signal is divided into streams. The streams are slanted from original central axes. Or, a waveguide having an asymmetrical structure is used. Thus, a flat-top pass-band of the optical signal is obtained. The present invention can be used in any optical device.

Abstract: The present invention is an optical modulator. It is fit for various wavelengths. The present invention has a logic signal of ‘0’ with a high signal level. The present invention has a high resist to noise. The present invention has advantages of a short length and a thin width to be applied to any optoelectronic related device or system.

Abstract: The present invention comprises an arrayed waveguide grating member, a taper multimode interference coupler and a taper optical attenuator to uniform and flatten a passband in an optical device.

Abstract: The present invention comprises an arrayed waveguide grating member, a taper multimode interference coupler and a taper optical attenuator to uniform and flatten a passband in an optical device.