Patents by Inventor Hung-duen Yang

Hung-duen Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composite dielectric material doped with rare earth metal oxide and manufacturing method thereof
    Patent number: 8552426
    Abstract: A composite dielectric material doped with rare earth metal oxide and a manufacturing method thereof are provided. The composite dielectric material is doped with nano-crystalline rare metal oxide which is embedded in silicon dioxide glass matrix, and the composite dielectric material of the nano-crystalline rare metal oxide and the silicon dioxide glass matrix is synthesized by the manufacturing method using sol-gel route. The dielectric value of the glass composite dielectric material is greater than that of pure rare metal oxide or that of silicon dioxide. In presence of magnetic field, the dielectric value of the composite dielectric material is substantially enhanced compared with that of the composite dielectric material at zero field.
    Type: Grant
    Filed: March 20, 2013
    Date of Patent: October 8, 2013
    Assignee: National Sun Yat-Sen University
    Inventors: Hung-Duen Yang, Sudip Mukherjee, Ching-Hsuan Chen
  • Composite dielectric material doped with rare earth metal oxide and manufacturing method thereof
    Patent number: 8551811
    Abstract: A composite dielectric material doped with rare earth metal oxide and a manufacturing method thereof are provided. The composite dielectric material is doped with nano-crystalline rare metal oxide which is embedded in silicon dioxide glass matrix, and the composite dielectric material of the nano-crystalline rare metal oxide and the silicon dioxide glass matrix is synthesized by the manufacturing method using sol-gel route. The dielectric value of the glass composite dielectric material is greater than that of pure rare metal oxide or that of silicon dioxide. In presence of magnetic field, the dielectric value of the composite dielectric material is substantially enhanced compared with that of the composite dielectric material at zero field.
    Type: Grant
    Filed: March 20, 2013
    Date of Patent: October 8, 2013
    Assignee: National Sun Yat-Sen University
    Inventors: Hung-Duen Yang, Sudip Mukherjee, Ching-Hsuan Chen
  • Composite dielectric material doped with rare earth metal oxide and manufacturing method thereof
    Patent number: 8546798
    Abstract: A composite dielectric material doped with rare earth metal oxide and a manufacturing method thereof are provided. The composite dielectric material is doped with nano-crystalline rare metal oxide which is embedded in silicon dioxide glass matrix, and the composite dielectric material of the nano-crystalline rare metal oxide and the silicon dioxide glass matrix is synthesized by the manufacturing method using sol-gel route. The dielectric value of the glass composite dielectric material is greater than that of pure rare metal oxide or that of silicon dioxide. In presence of magnetic field, the dielectric value of the composite dielectric material is substantially enhanced compared with that of the composite dielectric material at zero field.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: October 1, 2013
    Assignee: National Sun Yat-Sen University
    Inventors: Hung-duen Yang, Sudip Mukherjee, Ching-hsuan Chen
  • COMPOSITE DIELECTRIC MATERIAL DOPED WITH RARE EARTH METAL OXIDE AND MANUFACTURING METHOD THEREOF
    Publication number: 20110253996
    Abstract: A composite dielectric material doped with rare earth metal oxide and a manufacturing method thereof are provided. The composite dielectric material is doped with nano-crystalline rare metal oxide which is embedded in silicon dioxide glass matrix, and the composite dielectric material of the nano-crystalline rare metal oxide and the silicon dioxide glass matrix is synthesized by the manufacturing method using sol-gel route. The dielectric value of the glass composite dielectric material is greater than that of pure rare metal oxide or that of silicon dioxide. In presence of magnetic field, the dielectric value of the composite dielectric material is substantially enhanced compared with that of the composite dielectric material at zero field.
    Type: Application
    Filed: March 29, 2011
    Publication date: October 20, 2011
    Applicant: National Sun Yat-Sen University
    Inventors: Hung-duen Yang, Sudip Mukherjee, Ching-hsuan Chen