Abstract: The disclosure provides a test platform and a redundancy fuse latch analysis method. In a DRAM chip, a first redundant memory cell group is used to repair a failed memory cell group. The DRAM chip performs a write operation for a repaired address corresponding to the failed memory cell group, so as to write identification data corresponding to the repaired address into a second redundant memory cell group actually corresponding to the repaired address. The DRAM chip performs a read operation for a redundancy address corresponding to the repaired address to read the readout data from the first redundant memory cell group corresponding to the redundancy address. The test platform compares the readout data with the identification data to verify whether the first redundant memory cell group corresponding to the redundancy address and the second redundant memory cell group actually corresponding to the repaired address are the same one.

Abstract: A method for estimating resistances of a source contact and a drain contact of a MOS transistor includes the following steps. A MOS transistor is provided. The MOS transistor includes a substrate, a gate, a source region and a drain region, a source contact electrically connected to the source region, and a drain contact electrically connected to the drain region. A resistance difference between a source contact resistance and a drain contact resistance is obtained. A resistance sum of the source contact resistance and the drain contact resistance is obtained. The source contact resistance and the drain contact resistance are calculated based on the resistance sum of the source contact resistance and the drain contact resistance, and on the resistance difference between the source contact resistance and the drain contact resistance.

Abstract: A method for estimating resistances of a source contact and a drain contact of a MOS transistor includes the following steps. A MOS transistor is provided. The MOS transistor includes a substrate, a gate, a source region and a drain region, a source contact electrically connected to the source region, and a drain contact electrically connected to the drain region. A resistance difference between a source contact resistance and a drain contact resistance is obtained. A resistance sum of the source contact resistance and the drain contact resistance is obtained. The source contact resistance and the drain contact resistance are calculated based on the resistance sum of the source contact resistance and the drain contact resistance, and on the resistance difference between the source contact resistance and the drain contact resistance.