Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Abstract: A joystick includes a stick head, an actuating component, a substrate, a bearing base, a resilient recovering component, a first rotation component and a second rotation component. The actuating component has a first end and a second end opposite to each other. The first end is connected to the stick head, and an identification feature is disposed on the second end. The substrate has a detector used to detect the identification feature and determine motion of the stick head. The bearing base is disposed on the substrate. The resilient recovering component is disposed between the substrate and the bearing base. The first rotation component is movably disposed on the bearing base and rotatable in a first direction. The second rotation component is movably connected to the first rotation component and rotatable in a second direction different from the first direction, and connected to the actuating component in a rotatable manner.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A joystick includes a stick head, an actuating component, a substrate, a bearing base, a resilient recovering component and a constraining component. The actuating component has a first end and a second end opposite to each other. The first end is connected to the stick head, and an identification feature is disposed on the second end. The substrate has a detection module used to detect the identification feature and determine motion of the stick head. The bearing base is disposed on the substrate. An opening portion of the bearing base aligns with the detection module and the actuating component. The resilient recovering component is disposed between the substrate and the bearing base. The constraining component is disposed on the resilient recovering component and movably disposed inside the opening portion, and used to abut against the actuating component in a detachable manner.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Abstract: A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.

Abstract: A portable electronic device including a first body, a second body, a stand, and a hinge structure is provided. The stand has a first pivot part and a second pivot part opposite to the first pivot part, wherein the first pivot part is pivotally connected to the first body, and the second body is pivotally connected to the second pivot part. The hinge structure includes a first bracket secured to the second body, a second bracket secured to the second pivot part of the stand, a first movable base, a first shaft secured to the first bracket and pivoted to the first movable base, a second movable base, a second shaft secured to the first movable base and pivoted to the second movable base, and a sliding shaft fixed to the second movable base and slidably connected to the second bracket.

Abstract: A booting method is provided, applied to a computer system. The computer system includes a transmission interface, a power key, and a trigger element. The transmission interface includes a transmission specification and is electrically connected to a graphics card, and the power key is used for driving the computer system to perform a booting procedure. The booting method includes: detecting, in the booting procedure, whether the trigger element is triggered or not; and lowering the transmission specification and restarting the computer system when the trigger element is triggered. A computer system adopting the booting method is further provided.

Abstract: A booting method is provided, applied to a computer system. The computer system includes a transmission interface, a power key, and a trigger element. The transmission interface includes a transmission specification and is electrically connected to a graphics card, and the power key is used for driving the computer system to perform a booting procedure. The booting method includes: detecting, in the booting procedure, whether the trigger element is triggered or not; and lowering the transmission specification and restarting the computer system when the trigger element is triggered. A computer system adopting the booting method is further provided.

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract: Disclosed herein is a method of identifying a plurality of mesenchymal stem cells (MSCs) that are therapeutic to a subject having an immune-related disease, for example, arthritis. According to embodiments of the present disclosure, the MSCs exhibiting to the immune-related disease are characterized in having an immunosuppressive protein binding value (IPBv) greater than 170 toward indoleamine 2,3-dioxygenase (IDO) after being exposed to 50-800 U/ml of IFN-?. Also disclosed herein are uses of the identified MSCs for the manufacture of a medicament, and methods of treating an immune-related disease by use of the identified MSCs or medicament.

Abstract: A method and a device for analyzing data are provided. The method includes following steps. A plurality of queries for an event stored in a database are integrated to obtain a plurality of features. Each feature is limited at a searching condition. A plurality of items of searched data are obtained from the database according to respective searching condition of each feature. Whether a data volume of the searched data is higher or lower than a predetermined range is determined. If the data volume is higher than the predetermined range, the data volume of the searched data is reduced according to the features. If the data volume is lower than the predetermined range, the data volume of the searched data is increased according to the features. A correlation between the features and the event is analyzed according to the searched data.

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device has a first outermost sidewall and includes a light-emitting diode and an electrode. The light-emitting diode has a pad and a side surface. The electrode has a segment formed on the pad to extend beyond the side surface, and a first protrusion extending from the segment to the first outermost sidewall.

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract: A data analysis method is provided. The data analysis method includes collecting a user data; generating a number of situation conditions from the user data; calculating a distribution ratio of each of the situation conditions to obtain a first data; calculating a success ratio of information association of an information association algorithm under each of the situation conditions to obtain a second data; obtaining at least one evaluating parameter of the information association algorithm under the situation conditions according to the first data and the second data; and generating a suggestion information relating to the information association algorithm according to the at least one evaluating parameter.

Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.