Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating; a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.

Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

Abstract: The present invention discloses a method for maintaining or improving gastrointestinal condition, which includes: administering a lactic acid bacterial composition to a subject in need thereof, wherein the lactic acid bacterial composition comprises: a Lactobacillus paracasei ET-66 strain with a deposition number CGMCC 13514. The present invention also discloses a method for maintaining or improving gastrointestinal condition, which includes: administering a lactic acid bacterial fermentation composition to a subject in need thereof, wherein the lactic acid bacterial fermentation composition comprises: a fermentation product of a Lactobacillus paracasei ET-66 strain.

Abstract: A motor is provided and driven by two phase. The first and second control signals have a phase difference of 90 degrees and are configured to control the first and second driving units, respectively, and the first and second control signals drive the first and second coil sets, respectively. Each of the first and second poles of the permanent magnet occupies a mechanical angle of 360/2n degrees of the permanent magnet, respectively, and n is 1 or 3. The four sets of the coils of the stator are equally located on the stator, each set of the coil occupies a mechanical angle of 360/2m degrees of the stator, any two sets of the coils adjacent to each other are separated by a mechanical angle of 90?(360/2m) degrees, and m is 3 or 2, wherein m corresponds to 2 when n is 1, m corresponds to 3 when n is 3.

Abstract: A semiconductor structure includes a semiconductor fin extending from a substrate, a source/drain (S/D) feature disposed over the semiconductor fin, a silicide layer disposed over the S/D feature, where the silicide layer extends along a sidewall of the S/D feature, and an etch-stop layer (ESL) disposed along a sidewall of the silicide layer.

Abstract: An integrated antenna package structure includes a first redistribution structure, a first chip, a heat dissipation structure, a second chip, and an antenna structure. The first chip is located on a first side of the first redistribution structure, and is electrically connected to the first redistribution structure. The heat dissipation structure is thermally connected to the first chip, and the first chip is located between the heat dissipation structure and the first redistribution structure. The second chip is located on a second side of the first redistribution structure opposite to the first side, and is electrically connected to the first redistribution structure. The antenna structure is electrically connected to the first redistribution structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an epitaxial structure over the fin portion. The semiconductor device structure includes a dielectric fin over the base portion. The semiconductor device structure includes a silicide layer between the dielectric fin and the epitaxial structure. A void is between the silicide layer and the dielectric fin.

Abstract: A smart power stage (SPS) circuit of a power converter and a current monitoring circuit thereof are disclosed. The SPS circuit includes an output stage circuit and a driver. The output stage circuit receives an input voltage and the power converter provides an output voltage and an inductor current. The driver includes a driving circuit, a monitoring signal generation circuit and a compensation circuit. The driving circuit receives a PWM signal and provides a driving signal to the output stage circuit. The monitoring signal generation circuit receives the PWM signal, input voltage and output voltage for generating a monitoring signal related to the inductor current. The monitoring signal includes a simulated current signal. The compensation circuit is coupled to the monitoring signal generation circuit. When the simulated current signal is greater than a default value, the compensation circuit generates a compensation signal superposing to the simulated current signal.

Abstract: A manufacturing method of a meltblown fiber membrane includes the following step. A meltblown film is made to pass between a first pressing roller and a second pressing roller, such that a calendering process is performed on the meltblown film, in which the meltblown film includes a plurality of meltblown fibers, each of the meltblown fibers includes a high-fluidity polyester and a modified polyester, a melt index of the high-fluidity polyester under a temperature of 230° C. ranges from 350 g/10 min to 550 g/10 min, a melt index of the modified polyester under a temperature of 230° C. ranges from 200 g/10 min to 400 g/10 min, and a roller temperature of each of the first pressing roller and the second pressing roller ranges from 100° C. to 155° C.

Abstract: An integrated circuit includes a plurality of transistors and a vertical local interconnection. The transistors include a plurality of gate components, a plurality of front-side source/drain epitaxies and a plurality of back-side source/drain epitaxies, wherein the front-side source/drain epitaxies are closer to a front-side side of the integrated circuit than the back-side source/drain epitaxies. The vertical local interconnection connects a first connected-one of the front-side source/drain epitaxies with a second connected-one of the back-side source/drain epitaxies. A covered-one of the gate components is located between the first connected-one and the second connected-one, the covered-one comprises an front-side portion, a back-side portion and a covered portion connecting the front-side portion with the back-side portion, and the vertical local interconnection crosses the covered portion and exposes the front-side portion and the back-side portion.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. An alignment process is performed on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins. The first semiconductor workpiece is bonded to the second semiconductor workpiece. A shift value is determined between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece. A layer of an integrated circuit (IC) structure is formed over the second semiconductor workpiece based at least in part on the shift value.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: A semiconductor device includes a first semiconductor layer below a second semiconductor layer; first and second gate dielectric layers surrounding the first and the second semiconductor layers, respectively; and a gate electrode surrounding both the first and the second gate dielectric layers. The first gate dielectric layer has a first top section above the first semiconductor layer and a first bottom section below the first semiconductor layer. The second gate dielectric layer has a second top section above the second semiconductor layer and a second bottom section below the second semiconductor layer. The first top section has a first thickness. The second top section has a second thickness. The second thickness is greater than the first thickness.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A semiconductor substrate is provided. A plurality of dielectric layers and a plurality of first conductive features in the dielectric layers are formed on the semiconductor substrate. At least one polymer layer and a plurality of second conductive features in the at least one polymer layer on the dielectric layers are formed. A plurality of conductive connectors are formed to electrically connect to the second conductive features. The semiconductor substrate, the dielectric layers and the at least one polymer layer are cut into a plurality of dies.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate, a first semiconductor die, and a second semiconductor die. The substrate includes a first substrate partition and a second substrate partition. The first substrate partition has a first wiring structure. The second substrate partition is adjacent to the first substrate partition and has a second wiring structure. The first substrate partition and the second substrate partition are surrounded by a first molding material. The first semiconductor die is disposed over the substrate and electrically coupled to the first wiring structure. The second semiconductor die is disposed over the substrate and electrically coupled to the second wiring structure.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a molded semiconductor device, a first redistribution structure, and conductive vias. The molded semiconductor device comprises a sensor die with a first surface and a second surface opposite the first surface, wherein the sensor die has an input/output region and a sensing region at the first surface. The first redistribution structure is disposed on the first surface of the sensor die, wherein the first redistribution structure covers the input/output region and exposes the sensing region, and the first redistribution structure comprises a conductive layer having a redistribution pattern and a ring structure. The redistribution pattern is electrically connected with the sensor die. The ring structure surrounds the sensing region and is separated from the redistribution pattern, wherein the ring structure is closer to the sensing region than the redistribution pattern.

Abstract: A method for promoting growth of a probiotic microorganism includes cultivating the probiotic microorganism in a growth medium containing a fermented culture of lactic acid bacterial strains that include Lactobacillus salivarius subsp. salicinius AP-32 deposited at the China Center for Type Culture Collection (CCTCC) under CCTCC M 2011127, Lactobacillus plantarum LPL28 deposited at the China General Microbiological Culture Collection Center (CGMCC) under CGMCC 17954, Lactobacillus acidophilus TYCA06 deposited at the CGMCC under CGMCC 15210, and Bifidobacterium longum subsp. infantis BLI-02 deposited at the CGMCC under CGMCC 15212.

Abstract: A method and system to ensure correct firmware image execution in a computer system. The computer system has a processor executing a basic input/output system (BIOS) and a baseboard management controller (BMC). A first flash memory device is coupled to the processor storing a BIOS firmware image and a project name. A second flash memory device is coupled to the BMC storing a BMC firmware image and the project name. A programmable logic device is coupled to the first and second flash memory devices. The programmable logic device including a non-volatile memory storing a project name. The programmable logic device is configured to execute a Platform Firmware Resilience routine to compare the project name of the BIOS firmware image and the project name of the BMC firmware image with the stored project name before starting the BMC or executing the BIOS firmware image by the processor.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a layer of dielectric material over the gate structure, a source/drain (S/D) contact layer formed through and adjacent to the gate structure, and a trench conductor layer over and in contact with the S/D contact layer. The S/D contact layer can include a layer of platinum-group metallic material and a silicide layer formed between the substrate and the layer of platinum-group metallic material. A top width of a top portion of the layer of platinum-group metallic material can be greater than or substantially equal to a bottom width of a bottom portion of the layer of platinum-group metallic material.

Abstract: A keyswitch structure includes a base, a keycap, a first support, a second support, and a connection structure. The keycap moves up and down relative to the base through the first support and the second support. The connection structure is disposed on the base and includes a vertical-motion limiting part and a horizontal-motion limiting part. The first support includes a rod-shaped connection portion and is connected to the connection structure through the rod-shaped connection portion. The vertical-motion limiting part prevents the rod-shaped connection portion from vertically moving. The horizontal-motion limiting part limits the horizontal movement of the rod-shaped connection portion. The vertical-motion limiting part and the horizontal-motion limiting part are separated in the rotation axis of the rod-shaped connection portion.