Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

Abstract: A resource integration method includes the following steps: a receiving module receives access information from a guest operating system on the host device; the access information is used to determine whether the frame rate is lower than a frame rate threshold; when the receiving module determines that the frame rate is lower than the frame rate threshold, the receiving module transmits an external resource request signal to the receiving module; after the receiving module receives the external resource request signal, a resource management module (which is located in the bridge module) selects an optimal external device from a specific category (among a plurality of categories in a candidate list), and a calculation operation or a storage operation corresponding to the specific category is transmitted to the optimal external device for calculation or storage by the bridge module.

Abstract: A temperature sensing apparatus for a liquid crystal display device is disclosed. The apparatus can measure the device temperature without the existence of a conventional PN junction. The temperature sensing apparatus comprises at least one thin-film transistor (TFT) cell, a variable current source, a buffer and a sensing circuit. Each TFT cell has its respective drain and gate coupled together and a source coupled to a ground The variable current source is coupled to the drain of the TFT cell. The buffer has an input coupled to the drain of the TFT cell. The sensing circuit has an input coupled to an output of the buffer and an output to produce a voltage output signal. The temperature of the TFT cell is determined by inputting two currents at a sub-saturation region of the TFT cell and measuring voltage output signal difference.

Abstract: A fingerprint acquisition apparatus including a plurality of sensing units is provided. The fingerprint acquisition apparatus is used for sensing the ridge portion and the valley portion of a fingerprint. Each sensing unit includes a built-in capacitor. There is an inducing capacitance generated between each of the sensing units and the fingerprint while the fingerprint touches each of the sensing units. The fingerprint acquisition apparatus of the invention generates a fingerprint pattern by detecting the difference of inducing capacitances between the ridge portion of the fingerprint and the valley portion of the fingerprint.

Abstract: A temperature sensing apparatus for a liquid crystal display device is disclosed. The apparatus can measure the device temperature without the existence of a conventional PN junction. The temperature sensing apparatus comprises at least one thin-film transistor (TFT) cell, a variable current source, a buffer and a sensing circuit. Each TFT cell has its respective drain and gate coupled together and a source coupled to a ground The variable current source is coupled to the drain of the TFT cell. The buffer has an input coupled to the drain of the TFT cell. The sensing circuit has an input coupled to an output of the buffer and an output to produce a voltage output signal. The temperature of the TFT cell is determined by inputting two currents at a sub-saturation region of the TFT cell and measuring voltage output signal difference.

Abstract: A lamp clamping and electrically connecting device includes a base, two flexible portions and two protrusions. The flexible portions are interspaced to be disposed on the base. The protrusions are correspondingly disposed on the inner sides of the flexible portions. In a natural state, the gap between the protrusions is smaller than the diameter of an electrode end of a lamp. When the electrode end is moved towards the base in the gap between the protrusions, the electrode end presses the protrusions so that the flexible portions swing outwardly. When the electrode end touches the base, the protrusions are restored to the natural state, so that the protrusions and the base clamp the electrode end, and that the electrode end is electrically connected to the device.

Abstract: A CMOS power sensor is disclosed in the present invention. The CMOS power sensor includes a current coil, a high voltage device circuit, and a Hall device. The current coil is fabricated during the process steps of forming gold bumps of a CMOS device. One end of the current coil is connected to a voltage source, and the other end of the current coil is connected to a load. The high voltage device circuit is connected to the voltage source. The Hall device is connected to the high voltage device circuit and induces a Hall voltage in response to the magnetic field generated by the current coil.

Abstract: A temperature sensing apparatus for a liquid crystal display device is disclosed. The apparatus can measure the device temperature without the existence of a conventional PN junction. The temperature sensing apparatus comprises at least one thin-film transistor (TFT) cell, a variable current source, a buffer and a sensing circuit. Each TFT cell has its respective drain and gate coupled together and a source coupled to a ground. The variable current source is coupled to the drain of the TFT cell. The buffer has an input coupled to the drain of the TFT cell. The sensing circuit has an input coupled to an output of the buffer and an output to produce a voltage output signal. The temperature of the TFT cell is determined by inputting two currents at a sub-saturation region of the TFT cell and measuring voltage output signal difference.

Abstract: A common voltage adjustment apparatus for adjusting a common voltage of a liquid crystal display (LCD) panel includes a data-read-write circuit and an output circuit. The data-read-write circuit includes a one-time-programmable (OTP) memory module and a control interface unit. The OTP memory module includes several OTP memories. The control interface unit outputs common-voltage-setting data according to a control signal and selectively stores the common-voltage-setting data into an unwritten OTP memory in the OTP memory module. The output circuit includes a reference-voltage generator and a digital-to-analog converter (DAC). The reference-voltage generator generates a reference voltage. The DAC converts the common-voltage-setting data into an output voltage according to the reference voltage.

Abstract: A temperature sensor, which comprises a temperature-dependent element, a comparator unit, first/second capacitors and first/second switching capacitors, is provided. The temperature-dependent element has an input terminal selectively coupled to one of a first current source and a second current source, and has an output terminal. The comparator unit comprises a comparator and first/second feedback capacitors. One end of the first switching capacitor is coupled to the first comparator input terminal, and another end of the first switching capacitor is selectively coupled to one of two different voltages. One end of the second switching capacitor is coupled to the second comparator input terminal, and another end of the second switching capacitor is selectively coupled to one of two different voltages.

Abstract: A fingerprint acquisition apparatus including a plurality of sensing units is provided. The fingerprint acquisition apparatus is used for sensing the ridge portion and the valley portion of a fingerprint. Each sensing unit includes a built-in capacitor. There is an inducing capacitance generated between each of the sensing units and the fingerprint while the fingerprint touches each of the sensing units. The fingerprint acquisition apparatus of the invention generates a fingerprint pattern by detecting the difference of inducing capacitances between the ridge portion of the fingerprint and the valley portion of the fingerprint.

Abstract: A temperature sensor, which comprises a temperature-dependent element, a comparator unit, first/second capacitors and first/second switching capacitors, is provided. The temperature-dependent element has an input terminal selectively coupled to one of a first current source and a second current source, and has an output terminal. The comparator unit comprises a comparator and first/second feedback capacitors. One end of the first switching capacitor is coupled to the first comparator input terminal, and another end of the first switching capacitor is selectively coupled to one of two different voltages. One end of the second switching capacitor is coupled to the second comparator input terminal, and another end of the second switching capacitor is selectively coupled to one of two different voltages.

Abstract: A direct type backlight module comprises a front panel, a back cover and at least one light source. The back cover comprises an inner surface and an outer surface. The at least one light source is disposed on the inner surface of the back cover and comprises a power line for connecting to the at least one light source and the front panel. The direct type backlight provides a mechanism allowing the direct backlight module to be opened from rear. The direct type backlight prevents interfere between the power line and the front panel via the design of the mechanism. The display apparatus includes the direct type backlight module.

Abstract: A lamp clamping and electrically connecting device includes a base, two flexible portions and two protrusions. The flexible portions are interspaced to be disposed on the base. The protrusions are correspondingly disposed on the inner sides of the flexible portions. In a natural state, the gap between the protrusions is smaller than the diameter of an electrode end of a lamp. When the electrode end is moved towards the base in the gap between the protrusions, the electrode end presses the protrusions so that the flexible portions swing outwardly. When the electrode end touches the base, the protrusions are restored to the natural state, so that the protrusions and the base clamp the electrode end, and that the electrode end is electrically connected to the device.

Abstract: A CMOS power sensor is disclosed in the present invention. The CMOS power sensor includes a current coil, a high voltage device circuit, and a Hall device. The current coil is fabricated during the process steps of forming gold bumps of a CMOS device. One end of the current coil is connected to a voltage source, and the other end of the current coil is connected to a load. The high voltage device circuit is connected to the voltage source. The Hall device is connected to the high voltage device circuit and induces a Hall voltage in response to the magnetic field generated by the current coil.

Abstract: This specification discloses a non-volatile static random access memory (SRAM) cell with the feature of keeping data even after the power is turned off. It includes a static random access unit and a non-volatile memory unit. Therefore, it has the random access property of the SRAM normally. After the power is turned off, it can store data in the non-volatile memory unit, so that the data can be automatically restored to the static random access unit from the non-volatile memory unit when the power is turned on.

Abstract: A CMOS power sensor is disclosed in the present invention. The CMOS power sensor includes a current coil, a high voltage device circuit, and a Hall device. The current coil is fabricated during the process steps of forming gold bumps of a CMOS device. One end of the current coil is connected to a voltage source, and the other end of the current coil is connected to a load. The high voltage device circuit is connected to the voltage source. The Hall device is connected to the high voltage device circuit and induces a Hall voltage in response to the magnetic field generated by the current coil.

Abstract: A CMOS power sensor is disclosed in the present invention. The CMOS power sensor includes a current coil, a high voltage device circuit, and a Hall device. The current coil is fabricated during the process steps of forming gold bumps of a CMOS device. One end of the current coil is connected to a voltage source, and the other end of the current coil is connected to a load. The high voltage device circuit is connected to the voltage source. The Hall device is connected to the high voltage device circuit and induces a Hall voltage in response to the magnetic field generated by the current coil.

Abstract: A temperature sensing apparatus for a liquid crystal display device is disclosed. The apparatus can measure the device temperature without the existence of a conventional PN junction. The temperature sensing apparatus comprises at least one thin-film transistor (TFT) cell, a variable current source, a buffer and a sensing circuit. Each TFT cell has its respective drain and gate coupled together and a source coupled to a ground. The variable current source is coupled to the drain of the TFT cell. The buffer has an input coupled to the drain of the TFT cell. The sensing circuit has an input coupled to an output of the buffer and an output to produce a voltage output signal. The temperature of the TFT cell is determined by inputting two currents at a sub-saturation region of the TFT cell and measuring voltage output signal difference.

Abstract: This specification discloses a non-volatile static random access memory (SRAM) cell with the feature of keeping data even after the power is turned off. It includes a static random access unit and a non-volatile memory unit. Therefore, it has the random access property of the SRAM normally. After the power is turned off, it can store data in the non-volatile memory unit, so that the data can be automatically restored to the static random access unit from the non-volatile memory unit when the power is turned on.