Patents by Inventor Hung-Tai Chang

Hung-Tai Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240176353
    Abstract: The present invention provides a method of alerting to stationary objects for vehicle. When a vehicle moves at a first speed, an optical scanning device, an infrared image extraction device, and an image extraction device extract a first optical scanning image, a first infrared image, and a first ambient image of the ambiance on one side of the vehicle. According to the fusion algorithm and the optical flow method, the first obstacle information of the first obstacle in the first image will be given. According to the location information of the first obstacle, the vehicle computer judges and generates an alert message when the relative distance is smaller than a distance threshold value and the obstacle volume is greater than a volume threshold value.
    Type: Application
    Filed: July 6, 2023
    Publication date: May 30, 2024
    Inventors: TSUNG-HAN LEE, JINN-FENG JIANG, SHIH-CHUN HSU, TSU-KUN CHANG, CHENG-TAI LEI, HUNG-YUAN WEI
  • Publication number: 20230282746
    Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.
    Type: Application
    Filed: May 15, 2023
    Publication date: September 7, 2023
    Inventors: Hung-Tai Chang, Han-Yu Tang, Ming-Hua Yu, Yee-Chia Yeo
  • Patent number: 11688807
    Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.
    Type: Grant
    Filed: March 29, 2021
    Date of Patent: June 27, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Tai Chang, Han-Yu Tang, Ming-Hua Yu, Yee-Chia Yeo
  • Publication number: 20220246611
    Abstract: An embodiment includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes a first epitaxial source/drain region in the first fin and adjacent the first gate spacer, an outer surface of the epitaxial first source/drain region having more than eight facets in a first plane, the first plane being orthogonal to a top surface of the substrate.
    Type: Application
    Filed: January 29, 2021
    Publication date: August 4, 2022
    Inventors: Han-Yu Tang, Hung-Tai Chang, Ming-Hua Yu, Yee-Chia Yeo
  • Publication number: 20220131006
    Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.
    Type: Application
    Filed: March 29, 2021
    Publication date: April 28, 2022
    Inventors: Hung-Tai Chang, Han-Yu Tang, Ming-Hua Yu, Yee-Chia Yeo
  • Patent number: 5979734
    Abstract: A multipurpose staper includes a base, a sliding anvil assembly mounted on the base and move between a front side position and rear side position, a magazine and tie plate assembly pivoted to the base above the sliding anvil assembly, a press plate, a top cap pivoted to the base and depressed to force down the press plate, causing the press plate to drive a staple out of the magazine and tie plate assembly, enabling the driven staple to be forced into sheets of paper put on the front end of the base when the sliding anvil assembly is moved to the rear side position, or squeezed into a straight shape when the sliding anvil assembly is moved to the front side position, a front cap mounted on the top cap and moved between a first position to lock the press plate and a second position to unlock the press, and a rear cap pivoted to the top cap and integral with a pencil sharpener for sharpening a pencil.
    Type: Grant
    Filed: August 19, 1998
    Date of Patent: November 9, 1999
    Inventor: Hung-Tai Chang