Abstract: An integrated circuit structure is provided. The integrated circuit structure includes a die that contains a substrate, an interconnection structure, active connectors and dummy connectors. The interconnection structure is disposed over the substrate. The active connectors and the dummy connectors are disposed over the interconnection structure. The active connectors are electrically connected to the interconnection structure, and the dummy connectors are electrically insulated from the interconnection structure.

Abstract: A management circuit is coupled to multiple processor cores for performing current suppression. The management circuit includes a detection circuit and a throttle signal generator. The detection circuit is operative to receive an activity signal from each processor core, and estimate a total current consumed by the plurality of processor cores based on activity signals. The activity signal indicates a current index proportional to current consumption of the processor core in a given time period. The throttle signal generator is operative to assert or de-assert throttle signals to the processor cores, one processor core at a time, based on one or more metrics calculated from the total current.

Abstract: A conductive structure, includes: a plurality of conductive layers; a plurality of conductive pillars being formed on the plurality of conductive layers, respectively; and a molding compound laterally coating the plurality of conductive pillars. Each of the plurality of conductive pillars is a taper-shaped conductive pillar, and is tapered from the conductive layers.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: Devices and method for forming a switch including a heater layer including a first heater pad, a second heater pad, and a heater line connecting the first heater pad and the second heater pad, a phase change material (PCM) layer positioned in a same vertical plane as the heater line, and a floating spreader layer including a first portion positioned in the same vertical plane as the heater line and the PCM layer, in which the first portion has a first width that is less than or equal to a distance between proximate sidewalls of the first heater pad and the second heater pad.

Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.

Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: The present invention provides a steam-off gel nail removal device comprising a casing. A plurality of finger insertion holes for finger insertion is disposed on one side of the casing, and a receiving space is disposed on the inner side of the casing. The receiving space has therein a heating device and a control device connected to the heating device. A gel polish removing solution container is disposed on the inner side of the receiving space. The heating device is disposed on one side of the gel polish removing solution container to heat the gel polish removing solution container. The steam-off gel nail removal device of the present invention further comprises a safety switch and a finger separation unit for taking safety-enhancing measures to ensure user safety. The finger insertion holes are sufficient for every user's left hand or right hand to be placed comfortably on the steam-off gel nail removal device.

Abstract: A method for forming a printed circuit board includes providing a substrate including a first device region, a second device region and a dicing channel region between the first device region and the second device region. A first circuit is formed on the substrate. An insulating layer is formed on the first circuit and the substrate. At least one build-up circuit is formed on the insulating layer. A photoresist layer is formed on the at least one build-up circuit. An image transferring process is performed to pattern the photoresist layer to form a dam structure in the dicing channel region. A solder mask layer is formed on the at least one build-up circuit. The dam structure is removed to form a trench in the solder mask layer.

Abstract: A method for forming a printed circuit board is disclosed. A substrate including a first device region, a second device region and a dicing channel region between the first device region and the second device region is provided. A first circuit is formed on the substrate. An insulating layer is formed on the first circuit and the substrate. At least one build-up circuit is formed on the insulating layer. A photoresist layer is formed on the at least one build-up circuit. An image transferring process is performed to pattern the photoresist layer to form a dam structure in the dicing channel region. A solder mask layer is formed on the at least one build-up circuit. The dam structure is removed to form a trench in the solder mask layer.

Abstract: A metal shock absorber, an assembly of a metal shock absorber and a media recording unit, and a media recording device are provided. The metal shock absorber has a pair of horizontal portions, a perpendicular portion connected between the horizontal portions, and a pair of limiting portions. Each of the horizontal portions has a first arcuate protrusion protruding towards another first arcuate protrusion. The perpendicular portion is perpendicularly connected between the pair of horizontal portions, and has an assembling arm. The limiting portions are disposed at opposite sides of the perpendicular portion that are not connected with the horizontal portions. Since the thickness, the tolerance and costs of the metal shock absorber are less than those of the conventional rubber shock absorber, the assembly of the metal shock absorber with the media recording unit has a favorable assembly reliability, and therefore costs of the recording device are effectively lowered.

Abstract: An on-road energy conversion and vibration absorber apparatus receives the kinetic energy from moving vehicles and pedestrians when being weighed down, and converts the received kinetic energy into a potential energy using a restorable elastic element compressing a fluid thereby storing the potential energy in a pressure chamber, and then conducting the pressurized fluid to pass though a check valve along a conduit and drive a vane wheel by releasing its potential energy. The vane wheel in turn drives a generator to generate electric energy, and the vibration of the vehicles is alleviated by cushion effect provided by the apparatus.

Abstract: An on-road energy conversion and vibration absorber apparatus receives the kinetic energy from moving vehicles and pedestrians when being weighed down, and converts the received kinetic energy into a potential energy using a restorable elastic element compressing a fluid thereby storing the potential energy in a pressure chamber, and then conducting the pressurized fluid to pass though a check valve along a conduit and drive a vane wheel by releasing its potential energy. The vane wheel in turn drives a generator to generate electric energy, and the vibration of the vehicles is alleviated by cushion effect provided by the apparatus.