Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: A touch module includes a base plate, a magnet, a touchpad and a magnetic board. The magnetic board includes a first sensing line, a second sensing line, a third sensing line, a first communication part and a second communication part. The touchpad is located over the base plate. The magnetic board is arranged between the touchpad and the magnet. The first sensing line, the second sensing line and the third sensing line of the magnetic board are in parallel with each other and stacked on each other. The first sensing line is electrically connected with the second sensing line through the first communication part. The second sensing line is electrically connected with the third sensing line through the second communication part. The first sensing line, the second sensing line and the third sensing line sense a magnetic field of the magnet and generates a vibration.

Abstract: Devices and method for forming a switch including a heater layer including a first heater pad, a second heater pad, and a heater line connecting the first heater pad and the second heater pad, a phase change material (PCM) layer positioned in a same vertical plane as the heater line, and a floating spreader layer including a first portion positioned in the same vertical plane as the heater line and the PCM layer, in which the first portion has a first width that is less than or equal to a distance between proximate sidewalls of the first heater pad and the second heater pad.

Abstract: A button module is provided. The button module comprises a base, a pressing part, and an elastic part. The pressing part includes a fixed end and a free end. The fixed end is pivotally connected to the base in a first axial direction. The elastic part is disposed on a side of the pressing part facing the base. The elastic part includes a first damping portion and a second damping portion selectively pressing against the base, where a hardness of the first damping portion is different from a hardness of the second damping portion.

Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.

Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A stereolithography 3D (three-dimensional) printer and a method of adjusting temperature of printing materials thereof are provided. The stereolithography 3D printer has a material tank for accommodating print materials, a light module, a temperature-adjusting module, a temperature-sensing module, and a curing platform. The stereolithography 3D printer executes a procedure of controlling temperature for adjusting a temperature of the print material if a sensed temperature doesn't reach a default value, and executes a procedure of 3D printing for manufacturing a 3D physical model by using the print material whose temperature had been adjusted. The printing quality of the 3D physical models can be effectively improved via controlling the temperature of the print materials.

Abstract: A stereolithography 3D printer (1) and a method of adjusting temperature of printing materials thereof are provided. The stereolithography 3D printer (1) has a material tank (105) for accommodating print materials (20), a light module (103), a temperature-adjusting module (101), a temperature-sensing module (102), and a curing platform (104). The stereolithography 3D printer (1) executes a procedure of controlling temperature for adjusting a temperature of the print materials (20) if a sensed temperature doesn't reach a default value, and executes a procedure of 3D printing for manufacturing a 3D physical model by using the print materials (20) whose temperature had been adjusted. The printing quality of the 3D physical models can be effectively improved via controlling the temperature of the print materials (20).

Abstract: The present invention discloses a self-assembled monolayer with a general formula G1-R-G2, wherein G1 is SH. R of the mentioned general formula comprises one or any combination selected from the group consisting of the following: unsubstituted linear, branched, or cyclic alkyl moiety; single or multi-substituted linear, branched, or cyclic alkyl moiety with substituent selected from the group consisting of alkene and alkyne; aromatic group; multiple fused ring group; and multiple fused ring group with heteroatoms. G2 is an electron-withdrawing group.