Patents by Inventor Hung-Wen CHAN

Hung-Wen CHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145581
    Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.
    Type: Application
    Filed: January 4, 2024
    Publication date: May 2, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ya-Wen CHIU, Yi Che CHAN, Lun-Kuang TAN, Zheng-Yang PAN, Cheng-Po CHAU, Pin-Chu LIANG, Hung-Yao CHEN, De-Wei YU, Yi-Cheng LI
  • Patent number: 10351427
    Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: July 16, 2019
    Assignee: ASIA UNION ELECTRONIC CHEMICAL CORP.
    Inventors: Curtis Douglas Dove, Goang-Cheng Chang, Yuen-Ming Kung, Hung-Wen Chan, Wei-Hsuan Hsu
  • Publication number: 20180162731
    Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.
    Type: Application
    Filed: February 12, 2018
    Publication date: June 14, 2018
    Inventors: Curtis Douglas DOVE, Goang-Cheng CHANG, Yuen-Ming KUNG, Hung-Wen CHAN, Wei-Hsuan HSU
  • Patent number: 9926198
    Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: March 27, 2018
    Assignee: ASIA UNION ELECTRONIC CHEMICAL CORP.
    Inventors: Curtis Douglas Dove, Goang-Cheng Chang, Yuen-Ming Kung, Hung-Wen Chan, Wei-Hsuan Hsu
  • Publication number: 20140326593
    Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.
    Type: Application
    Filed: April 30, 2014
    Publication date: November 6, 2014
    Applicant: ASIA UNION ELECTRONICAL CHEMICAL CORP.
    Inventors: Curtis Douglas DOVE, Goang-Cheng CHANG, Yuen-Ming KUNG, Hung-Wen CHAN, Wei-Hsuan HSU