Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: A secondary controller applied to a secondary side of a power converter includes a control signal generation circuit and a gate control signal generation circuit. The gate control signal generation circuit generates a gate control signal, and generates an injection signal according to the gate control signal. When a superposition voltage is less than a reference voltage, the control signal generation circuit generates a gate pulse control signal, wherein the gate pulse control signal corresponds to an output voltage of the power converter and the injection signal, the gate control signal generation circuit is further used for generating a gate pulse signal according to the gate pulse control signal, and the gate pulse signal is used for making a primary side of the power converter turned on.

Abstract: A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.

Abstract: A swivel bracket assembly and a method for installing an electrical component to a riser bracket assembly are disclosed. The swivel bracket assembly includes a baseplate; a swivel bracket rotatably attached to the baseplate, the swivel bracket being rotatable between an open position and a closed position; and pads attached to the swivel bracket, at least one of the pads being configured to contact and support the electrical component attached to the riser bracket assembly when the swivel bracket is in the closed position. A method for installing an electrical component to a riser bracket assembly includes receiving the electrical component into a slot of a riser circuit board and pivoting a swivel bracket rotatable coupled to a baseplate from an open position to a closed position to support the electrical component secured to the riser bracket assembly.

Abstract: A rotary bearing assembly is disclosed and includes an input shaft, an inner-ring component, an outer-ring component and a load element. The input shaft is configured to combine a rotating shaft of a motor to provide a power input. The inner-ring component includes a gear set, wherein the inner-ring component is sleeved on the input shaft through the gear set and driven by the input shaft. The outer-ring component is sleeved on the inner-ring component through a load element and engaged with the gear set, wherein when the gear set is driven by the input shaft to drive the inner-ring component, the gear set drives the outer-ring component, and the inner-ring component and the outer-ring component are rotated relatively, wherein one of the inner-ring component and the outer-ring component is served to provide a power output, and a rotational speed difference is between the power input and the power output.

Abstract: Methods and systems for thermal management of hardware resources that may be used to provide computer implemented services are disclosed. The disclosed thermal management method and systems may improve the likelihood of data processing systems providing desired computer implemented services by improving the thermal management of the hardware resources without impairment of storage devices. To improve the likelihood of the computer implemented services being provided, the systems may proactively identify whether storage devices subject to impairment due to dynamic motion are present. If such storage devices are present, then the system may automatically take action to reduce the likelihood of the storage devices being subject to dynamic motion sufficient to impair their operation.

Abstract: A thin film transistor and method of making the same, the thin film transistor including: a substrate; a word line disposed on the substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region disposed between the source and drain regions and overlapping with the word line in a vertical direction perpendicular to a plane of the substrate; a hydrogen diffusion barrier layer overlapping with the channel region in the vertical direction; a gate dielectric layer disposed between the channel region and the word line; and source and drain electrodes respectively electrically coupled to the source and drain regions.

Abstract: A display device includes a base layer, a touch sensing layer, a light guide module and a display panel. The touch sensing layer is disposed on the base layer. The light guide module is disposed on the touch sensing layer. The touch sensing layer is located between the light guide module and the display panel, and the touch sensing layer and one of the light guide module and the display panel have no adhesive material therebetween.

Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Abstract: Provided are a circuit apparatus, a manufacturing method thereof, and a circuit system. The circuit apparatus includes a flexible circuit board, a flexible packaging material layer and an electronic device. The flexible circuit board has at least one hollow pattern, wherein the flexible circuit board has an inner region and a peripheral region surrounding the inner region, and has a first surface and a second surface opposite to each other. The flexible packaging material layer is disposed in the at least one hollow pattern. The electronic device is disposed on the first surface of the flexible circuit board and electrically connected with the flexible circuit board.

Abstract: A button module is provided. The button module comprises a base, a pressing part, and an elastic part. The pressing part includes a fixed end and a free end. The fixed end is pivotally connected to the base in a first axial direction. The elastic part is disposed on a side of the pressing part facing the base. The elastic part includes a first damping portion and a second damping portion selectively pressing against the base, where a hardness of the first damping portion is different from a hardness of the second damping portion.

Abstract: An analog front-end (AFE) circuit, configured to be coupled to a sensor having a plurality of sensing units, includes a plurality of sensing circuits and a plurality of multiplexers. Each of the plurality of multiplexers is coupled between one of the plurality of sensing units and at least two of the plurality of sensing circuits.

Abstract: An SOT MRAM structure includes a word line. A second source/drain doping region and a fourth source/drain doping region are disposed at the same side of the word line. A first conductive line contacts the second source/drain doping region. A second conductive line contacts the fourth source/drain doping region. The second conductive line includes a third metal pad. A memory element contacts an end of the first conductive line. A second SOT element covers and contacts a top surface of the memory element. The third metal pad covers and contacts part of the top surface of the second SOT element.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.

Abstract: A leak check is performed on a semiconductor wafer processing tool that includes a process chamber and process gas lines, and a semiconductor wafer is processed using the semiconductor wafer processing tool if the leak check passes. Each gas line includes a mass flow controller (MFC) and normally closed valves including an upstream and downstream valves upstream and downstream of the MFC. Leak checking includes: leak checking up to the downstream valves of the gas lines with the upstream valves closed and the downstream valves of the gas lines closed; and leak checking up to the upstream valve of each the process gas line with the upstream valves of the of the process gas lines closed and with the downstream valve of the of the process gas line being leak checked open and the downstream valve of every other process gas line closed.

Abstract: A thin film transistor and method of making the same, the thin film transistor including: a substrate; a word line disposed on the substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region disposed between the source and drain regions and overlapping with the word line in a vertical direction perpendicular to a plane of the substrate; a hydrogen diffusion barrier layer overlapping with the channel region in the vertical direction; a gate dielectric layer disposed between the channel region and the word line; and source and drain electrodes respectively electrically coupled to the source and drain regions.

Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.