Abstract: Radio frequency switches with improved switching speed are provided. In certain embodiments, an RF switching circuit includes a FET switch including a gate, a digital buffer configured to provide a first output voltage to the gate of the FET during a steady-state, and a fast switching circuit in parallel with the digital buffer and configured to provide a second output voltage to the gate of the FET during a switching state. The fast switching circuit includes at least one charge pump configured to boost at least one supply voltage to a multiple of the at least one supply voltage. The fast switching circuit is configured to generate the second output voltage based on the boosted at least one supply voltage.

Abstract: System and methods for reducing nonlinearity in radio frequency (RF) circuitries (e.g., RF switch circuitry and/or RF amplifier circuitry) are provided. A high-linearity RF integrated circuit device includes an input port; an output port; nonlinear circuitry arranged on a signal path between the input port and the output port; a shunt path including signal adjustment circuitry; and adjustable nonlinearity generation circuitry coupled to the signal adjustment circuitry, the adjustable nonlinearity generation circuitry including one or more metal-oxide-semiconductor (MOS) devices; and at least one nonlinearity generation activation element connected in parallel with a source terminal and a drain terminal of a first MOS device of the one or more MOS devices and responsive to an activation control signal. The nonlinear circuitry may include at least one of switching circuitry or amplifier circuitry. The shunt path may be coupled to the input port or the output port.

Abstract: System and methods for reducing nonlinearity in radio frequency (RF) circuitries (e.g., RF switch circuitry and/or RF amplifier circuitry) are provided. A high-linearity RF integrated circuit device includes an input port; an output port; nonlinear circuitry arranged on a signal path between the input port and the output port; a shunt path including signal adjustment circuitry; and adjustable nonlinearity generation circuitry coupled to the signal adjustment circuitry, the adjustable nonlinearity generation circuitry including one or more metal-oxide-semiconductor (MOS) devices; and at least one nonlinearity generation activation element connected in parallel with a source terminal and a drain terminal of a first MOS device of the one or more MOS devices and responsive to an activation control signal. The nonlinear circuitry may include at least one of switching circuitry or amplifier circuitry. The shunt path may be coupled to the input port or the output port.

Abstract: Radio frequency switches with improved switching speed are provided. In certain embodiments, an RF switching circuit includes a FET switch including a gate, a digital buffer configured to provide a first output voltage to the gate of the FET during a steady-state, and a fast switching circuit in parallel with the digital buffer and configured to provide a second output voltage to the gate of the FET during a switching state. The fast switching circuit includes at least one charge pump configured to boost at least one supply voltage to a multiple of the at least one supply voltage. The fast switching circuit is configured to generate the second output voltage based on the boosted at least one supply voltage.

Abstract: Apparatus and methods for biasing radio frequency (RF) switches to achieve fast switching are disclosed herein. In certain configurations, a switch bias circuit generates a switch control voltage for turning on or off a switch that handles RF signals. The switch bias circuit provides the switch control voltage to a control input of the switch by way of a resistor. Additionally, the switch bias circuit pulses the switch control voltage when turning on or off the switch to thereby shorten switching time. Thus, the switch can be turned on or off quickly, which allows the switch to be available for use soon after the state of the switch has been changed.

Abstract: Apparatus and methods for biasing radio frequency (RF) switches to achieve fast switching are disclosed herein. In certain configurations, a switch bias circuit generates a switch control voltage for turning on or off a switch that handles RF signals. The switch bias circuit provides the switch control voltage to a control input of the switch by way of a resistor. Additionally, the switch bias circuit pulses the switch control voltage when turning on or off the switch to thereby shorten switching time. Thus, the switch can be turned on or off quickly, which allows the switch to be available for use soon after the state of the switch has been changed.

Abstract: The present invention presents unit cell architecture for infrared imaging, which has two input stages covering for both low and high light levels, and automatic input selection circuitry inside to extend dynamic range. The invention mainly helps to extend dynamic range of near visible (NIR) and short wave infrared (SWIR) image sensors by improving SNR value. The idea is applicable to not only infrared bands including NIR, SWIR, MWIR and LWIR but also full spectrum light.

Abstract: The present invention proposes a CMOS sensor pixel with a pulse frequency modulated digital readout integrated circuit (DROIC) comprising a photon sensitive element for receiving a plurality of photons and providing a charge signal indicative of the received photons, an integration capacitor connected to said photon sensitive element for determining a cumulative signal based on the charge signal for a certain integration time and producing an integrator output signal based on the cumulative signal and a comparator connected to the integrator for producing a comparator output signal. Each of said pixels further comprises a DAC that switches at each clock cycle following the end of an integration time and two counters respectively counting number of resets of said integration capacitor and voltage difference between an integrator output residue signal and a reference voltage of said comparator.

Abstract: The present invention presents unit cell architecture for infrared imaging, which has two input stages covering for both low and high light levels, and automatic input selection circuitry inside to extend dynamic range. The invention mainly helps to extend dynamic range of near visible (NIR) and short wave infrared (SWIR) image sensors by improving SNR value. The idea is applicable to not only infrared bands including NIR, SWIR, MWIR and LWIR but also full spectrum light.

Abstract: The present invention proposes a CMOS sensor pixel with a pulse frequency modulated digital readout integrated circuit (DROIC) comprising a photon sensitive element for receiving a plurality of photons and providing a charge signal indicative of the received photons, an integration capacitor connected to said photon sensitive element for determining a cumulative signal based on the charge signal for a certain integration time and producing an integrator output signal based on the cumulative signal and a comparator connected to the integrator for producing a comparator output signal. Each of said pixels further comprises a DAC that switches at each clock cycle following the end of an integration time and two counters respectively counting nunber of resets of said integration capacitor and voltage difference between an integrator output residue signal and a reference voltage of said comparator.