Abstract: One or more graphene layers may be formed on a diamond substrate by reforming sp3 hybrid orbitals of C—C bonds in a portion of the diamond substrate into sp2 hybrid orbitals. Forming sp2 hybrid orbitals may be achieved by ion bombardment to damage the sp3 hybrid orbitals of the C—C bonds in the diamond substrate and subsequent heating of the diamond substrate to allow annealing to take place. If more than ten graphene layers are formed on the diamond substrate, the graphene layers may be reduced to ten or less graphene layers. Removal of the graphene layers may be performed by peeling a desired number of layers using an adhesive material.

Abstract: One or more graphene layers may be formed on a diamond substrate by reforming sp3 hybrid orbitals of C—C bonds in a portion of the diamond substrate into sp2 hybrid orbitals. Forming sp2 hybrid orbitals may be achieved by ion bombardment to damage the sp3 hybrid orbitals of the C—C bonds in the diamond substrate and subsequent heating of the diamond substrate to allow annealing to take place. If more than ten graphene layers are formed on the diamond substrate, the graphene layers may be reduced to ten or less graphene layers. Removal of the graphene layers may be performed by peeling a desired number of layers using an adhesive material.