Patents by Inventor Hussein Nili AHMADABADI

Hussein Nili AHMADABADI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10985318
    Abstract: A memristor device is disclosed comprising: a first electrode; a second electrode; a cathode metal layer disposed on a surface of the first electrode; and an active region disposed between and in electrical contact with the second electrode and the cathode metal layer, the active region comprising at least one layer of an amorphous metal oxide, wherein when a switching voltage is applied between the first and second electrodes, the active region exhibits a resistive switching behaviour. A method of fabricating a memristor device is also disclosed.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: April 20, 2021
    Assignee: ROYAL MELBOURNE INSTITUTE OF TECHNOLOGY
    Inventors: Madhu Bhaskaran, Sharath Sriram, Sumeet Walia, Hussein Nili Ahmadabadi
  • Patent number: 10812084
    Abstract: A security primitive for an integrated circuit comprises an array of floating-gate transistors monolithically integrated into the integrated circuit and coupled to one another in a crossbar configuration. The floating-gate transistors have instance-specific process-induced variations in analog behavior to provide one or more reconfigurable physically unclonable functions (PUFs).
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: October 20, 2020
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Dmitri Strukov, Hussein Nili Ahmadabadi, Mohammad Reza Mahmoodi, Zahra Fahimi
  • Publication number: 20200145008
    Abstract: A security primitive for an integrated circuit comprises an array of floating-gate transistors monolithically integrated into the integrated circuit and coupled to one another in a crossbar configuration. The floating-gate transistors have instance-specific process-induced variations in analog behavior to provide one or more reconfigurable physically unclonable functions (PUFs).
    Type: Application
    Filed: November 6, 2019
    Publication date: May 7, 2020
    Inventors: Dmitri Strukov, Hussein Nili Ahmadabadi, Mohammad Reza Mahmoodi, Zahra Fahimi
  • Publication number: 20180351095
    Abstract: A memristor device is disclosed comprising: a first electrode; a second electrode; a cathode metal layer disposed on a surface of the first electrode; and an active region disposed between and in electrical contact with the second electrode and the cathode metal layer, the active region comprising at least one layer of an amorphous metal oxide, wherein when a switching voltage is applied between the first and second electrodes, the active region exhibits a resistive switching behaviour. A method of fabricating a memristor device is also disclosed.
    Type: Application
    Filed: November 23, 2016
    Publication date: December 6, 2018
    Inventors: Madhu BHASKARAN, Sharath SRIRAM, Sumeet WALIA, Hussein Nili AHMADABADI