Abstract: A planar metal antenna mounted on a semiconductor body and incorporating an active circuit element, for example a diode, integrated in the path of the antenna. Connection between the antenna metal and a peripheral contact is provided by a connecting link of resistive sheet material sub-divided, by voids or by inclusions of high resistive material, into a number of conductive tracks each of width and spacing of dimension small compared with the width of the antenna. The link thus exhibits an effectively high sheet resistivity at high frequency—i.e. at a frequency at or near to the frequency of antenna resonance and thus affords effective hf isolation between the antenna and the contact. At the same time, at dc and at intermediate frequency, a relatively low resistance path is afforded for bias and for extraction of IF signal. The number, width and spacing of the tracks may be varied with distance from the antenna metal to minimize the dc resistivity.

Abstract: A field-effect transistor (FET) for use at microwave frequencies has electrodes which act as transmission lines. Gate electrodes can comprise a narrow operative part between the source and drain electrodes which provides gating action, and a gate supply part which lies outside the source and drain electrodes and is connected to the operative part by a plurality of connections distributed along its length. In one form the device can be used as an amplifier and as such is capable of providing higher power handling capacity than conventional FETs, since the device can be extended in size and phase differences between various parts of the device compensate for one another. Other forms and applications are disclosed as a modulator and as a convoluter.

Abstract: A semiconductor transferred electron device of the kind which includes indium phosphide as a major constituent is provided with a cathode consisting of oxidized silver gallium. The cathode preferably contains 4 times more silver than gallium by weight, and the oxygen content is preferably from 2 to 20 atomic per cent of the gallium content of the cathode. This improved device provides high electrical to microwave conversion efficiencies for a high proportion of devices produced together in any given batch.