Abstract: The present invention relates to a technology with enables an image signal processor to output image data at a faster speed while using a memory having a smaller capacity. The image signal processor includes a pair of line memories for storing image data output from an analog-digital converter such that the image data alternates in units of horizontal lines, and outputting the stored image data in units of blocks according to a first-in-first-out method.

Abstract: The present invention provides an image processing package comprising: an image sensor for receiving an image of a subject, which is incident from the outside, in the form of light and converting the image of the subject into an image signal; and an image signal processor for processing the image signal which is output from the image sensor and reproducing the image of the subject, wherein the image processing package has a structure in which the image sensor is vertically stacked on the image signal processor.

Abstract: The present invention relates to a technology enabling a normal access by controlling a read access through an arbiter in a circuit for controlling an access to memory to which clock signals are input through two ports, respectively for a read access to a single port memory. The present invention includes an arbiter that generates an internal clock signal through a state transition among a first state for generating a first clock signal, a second state for generating a second clock signal, a standby state and a neutral state when generating the internal clock signal for reading data from the memory on the basis of the first clock signal and the second clock signal, and a read end signal that is supplied from the memory.

Abstract: A semiconductor device having improved heat-dissipation characteristics is capable effectively discharging heat that is generated inside the semiconductor device of a three-dimensional laminated structure, to the outside of the semiconductor device by utilizing an internal connector used during bonding.

Abstract: The present invention provides an image processing package comprising: an image sensor for receiving an image of a subject, which is incident from the outside, in the form of light and converting the image of the subject into an image signal; and an image signal processor for processing the image signal which is output from the image sensor and reproducing the image of the subject, wherein the image processing package has a structure in which the image sensor is vertically stacked on the image signal processor.

Abstract: The present invention relates to a technology enabling a normal access by controlling a read access through an arbiter in a circuit for controlling an access to memory to which clock signals are input through two ports, respectively for a read access to a single port memory. The present invention includes an arbiter that generates an internal clock signal through a state transition among a first state for generating a first clock signal, a second state for generating a second clock signal, a standby state and a neutral state when generating the internal clock signal for reading data from the memory on the basis of the first clock signal and the second clock signal, and a read end signal that is supplied from the memory.

Abstract: A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.

Abstract: The present invention relates to a technology with enables an image signal processor to output image data at a faster speed while using a memory having a smaller capacity. The image signal processor includes a pair of line memories for storing image data output from an analog-digital converter such that the image data alternates in units of horizontal lines, and outputting the stored image data in units of blocks according to a first-in-first-out method.

Abstract: The present invention provides a stack memory device and a method for operating same. The stack memory device, according to the present invention, is provided with: a first memory chip in which first type memory cells are repeatedly arranged in row direction and column direction, and which comprises one or more cell arrays, in which a dump line is connected to the each first type memory cell; and a second memory chip in which second type memory cells are repeatedly arranged in row direction and column direction, and which comprises one or more cell arrays, in which a dump line is connected to the each second type memory cell, wherein first pads are connected to the dump lines of the first type memory cells and second pads are connected to the dump lines of the second type memory cells, the first pads and the second pads having one-to-one correspondence.

Abstract: A semiconductor apparatus having a heat dissipating function and electronic equipment comprising the same includes a front surface on which semiconductor devices constituting a circuit a circuit are formed; and a rear surface including a convexo-concave surface. Thus, the heat dissipation effect of the semiconductor apparatus can be maximized even without attaching a heat dissipation plate thereto.

Abstract: A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.

Abstract: A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.

Abstract: A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.

Abstract: A semiconductor device having improved heat-dissipation characteristics is capable effectively discharging heat that is generated inside the semiconductor device of a three-dimensional laminated structure, to the outside of the semiconductor device by utilizing an internal connector used during bonding.