Abstract: An electric field-controlled refractive index tunable device includes a phase change correlated transition metal oxide layer, and E-field responsive charge dopants. The E-field responsive charge dopants either accumulate in the phase change correlated transition metal oxide layer or are depleted from the phase change correlated transition metal oxide layer in response to an E-field applied to the phase change correlated transition metal oxide layer.

Abstract: A transition metal dichalcogenide (TMD) transistor includes a substrate, an n-type two-dimensional (2D) TMD layer, a metal source electrode, a metal drain electrode, and a gate dielectric. The substrate has a top portion that is an insulating layer, and the n-type 2D TMD layer is on the insulating layer. The metal source electrode, the metal drain electrode, and the gate dielectric are on the n-type 2D TMD layer. The metal gate electrode is on top of the gate dielectric and is between the metal source electrode and the metal drain electrode.

Abstract: A method of providing a spatial light modulator comprising: providing a substrate; providing a first phase change material cell on the substrate, the first phase change material cell comprising: a first electrical heater on the substrate; a first optical reflector layer on the electrical heater; and a first phase change material layer on the optical reflector layer; and providing at least a second phase change material cell on the substrate, the second phase change material cell comprising: a second electrical heater on the substrate; a second optical reflector layer on the second electrical heater; a second phase change material layer on the second optical reflector layer; and providing a light absorber layer between the first phase change material cell and the second phase change material cell.

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: A field effect transistor includes a substrate, a passivation layer on the substrate forming a passivated substrate, wherein the passivation layer is inert to XeF2, and a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate.

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: A Field Effect Transistor (FET) device and a method for manufacturing it are disclosed. The FET device contains a graphene layer, a composite gate dielectric layer disposed above the graphene layer, wherein the composite gate layer is passivated with fluorine, and a metal gate disposed above the composite gate dielectric layer. The method disclosed teaches how to manufacture the FET device.

Abstract: A spatial light modulator includes a substrate, a phase change material cell on the substrate, the phase change material cell including an electrical heater on the substrate, an optical reflector layer on the electrical heater, and a phase change material layer on the optical reflector layer.

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: A device including a biopolymer membrane, a passivation layer on the biopolymer membrane, a graphene layer on the passivation layer, a source electrode on the graphene layer, and a drain electrode on the graphene layer, wherein the graphene layer extends between the source electrode and the drain electrode.

Abstract: A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

Abstract: A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

Abstract: A device including a biopolymer membrane, a passivation layer on the biopolymer membrane, a graphene layer on the passivation layer, a source electrode on the graphene layer, and a drain electrode on the graphene layer, wherein the graphene layer extends between the source electrode and the drain electrode.

Abstract: An optical device includes an optically transparent and electrically conducting conductor including graphene, a network of metal nanowires, or graphene integrated with a network of metal nanowires. The optical device includes a II VI compound semiconductor, a III V compound semiconductor, or InAsSb.

Abstract: A switch includes an input port, an output port, a phase change material coupled between the input port and the output port, a heater, and a thermal dielectric layer in between the heater and the phase change material, and in contact with the heater and the phase change material. The thermal dielectric layer provides thermal conduction between the phase change material and the heater, and the thermal dielectric layer is nonmetallic and electrically non-conductive and includes polycrystalline AlN, diamond, or SiC.