Abstract: The movement-free bending method means the one of deformation methods for a one- or two-dimensional nanostructures using an ion beam capable of bending and deforming them and furthermore, changing a bending direction without requiring a motion such as a rotation of the nanostructures. The present invention affords a movement-free bending method for deforming the nanostructure 20 having the one-dimensional or two-dimensional shape by irradiating the ion beam 10, wherein a bending direction of the nanostructure 20 is controlled depending on energy of the ion beam 10 or a thickness of the nanostructure 20.

Abstract: The movement-free bending method means the one of deformation methods for a one- or two-dimensional nanostructures using an ion beam capable of bending and deforming them and furthermore, changing a bending direction without requiring a motion such as a rotation of the nanostructures. The present invention affords a movement-free bending method for deforming the nanostructure 20 having the one-dimensional or two-dimensional shape by irradiating the ion beam 10, wherein a bending direction of the nanostructure 20 is controlled depending on energy of the ion beam 10 or a thickness of the nanostructure 20.

Abstract: The present invention discloses a dielectric ceramic composition having a formula represented by (1−x)Nd(Ga1−yAly)O3-xCaTiO3, wherein x refers a mole fraction of CaTiO3 to the composition and satisfies an expression of 0.5≦x≦0.8, and y refers a mole fraction of Al to Ga and satisfies an expression of 0≦y≦0.9. The present dielectric substance has a high dielectric constant and a high Q value and a resonant frequency temperature coefficient of near 0. Also, it can be sintered at a low temperature and thus replace the conventional dielectric materials used as a filter for parts of mobile communication or satellite communication appliances.

Abstract: The present invention discloses a method for preparing Ba(Zn1/3Ta2/3)O3 dielectric ceramic compositions. In accordance with the present invention, by adding a small amount of Al2O3, Ga2O3, ZrO2, or TiO2, which can generate metal ion having an atomic value of 3+ or 4+, the problems occurring during the sintering of BZT due to the volatilization of Zn can be solved. Also, the BZT dielectrics obtained from the present method have a Q value of 200,000, which is higher than the pure BZT, a dielectric constant of 28.5 or more and a resonant frequency temperature coefficient of near 0.

Abstract: The present invention discloses a dielectric ceramic composition having a formula represented by (1−x)Nd(Ga1−yAly)O3−xCaTiO3, wherein x refers a mole fraction of CaTiO3 to the composition and satisfies an expression of 0.5≦x≦0.8, and y refers a mole fraction of Al to Ga and satisfies an expression of 0≦y≦0.9.

Abstract: The present invention discloses a method for preparing Ba(Zn⅓Ta⅔)O3 dielectric ceramic compositions.