Patents by Inventor Hwan Yoo

Hwan Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10826442
    Abstract: An apparatus includes an amplifying circuit configured to include stacked first and second transistors, and to amplify a signal input from an input terminal during an operation in an amplifying mode, and provide the amplified signal to an output terminal, and a negative feedback circuit comprising first to nth sub-negative feedback circuits, each corresponding to a separate gain mode included in the amplifying mode, wherein the negative feedback circuit is configured to provide a variable resistance value to determine a negative feedback gain based on each of the separate gain modes.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: November 3, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Jin Yoo, Jong Mo Lim, Yoo Hwan Kim, Hyung Jun Cho, Hyun Hwan Yoo, Yoo Sam Na
  • Publication number: 20200294416
    Abstract: A pegboard of the present disclosure includes: a main device including multiple unit modules; a board plate including multiple receiving portions; and multiple pegs to be inserted into the multiple receiving portions, and the multiple unit modules include multiple sensor modules configured to sense whether the multiple pegs are inserted into the multiple receiving portions and multiple light source modules configured to output light to the multiple receiving portions.
    Type: Application
    Filed: September 27, 2018
    Publication date: September 17, 2020
    Inventors: Sung Jun ROH, Kyung Hwan YOO, Seo Jeong HAN
  • Patent number: 10778175
    Abstract: A coupler circuit includes: a signal line disposed between a first terminal and a second terminal; a coupling line disposed between a coupling port and an isolation port such that the coupling line is coupled to the signal line and is configured to extract a coupling signal from the signal line; and a coupling adjusting circuit connected to the coupling port and the isolation port, and configured to reduce changes in an amount of coupling according to a change in a frequency band of a signal passing through the signal line.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: September 15, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Mo Lim, Hyun Jin Yoo, Yoo Sam Na, Hyun Hwan Yoo, Hyung Jun Cho, Yoo Hwan Kim
  • Publication number: 20200227201
    Abstract: An inductor includes a substrate, and a first coil pattern disposed on one surface of the substrate and having a spiral shape comprising a plurality of turns, wherein as the first coil pattern extends inwardly towards a center of the first coil pattern, a pattern width of the first coil pattern decreases while a center-to-center distance between two adjacent turns of the first coil pattern increases.
    Type: Application
    Filed: July 24, 2019
    Publication date: July 16, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyung Jun CHO, Jong Mo LIM, Hyun Hwan YOO, Hyun Jin YOO, Yoo Hwan KIM, Yoo Sam NA
  • Patent number: 10715374
    Abstract: A Long Range (LoRa) communication system with an improved data rate and method thereof are provided. When a packet to be transmitted is received, a transmission device determines a transmission scheme. When the determined transmission scheme is an enhanced transmission scheme, the transmission device transmits a preamble signal indicating that a packet is to be transmitted using the enhanced transmission scheme, converts n-th data of the packet to an up-chirp signal, converts (n+1)-th data of the packet to a down-chirp signal, generates a transmission signal by adding the n-th data converted to the up-chirp signal and the (n+1)-th data converted to the down-chirp signal, and transmits the transmission signal to a reception device.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: July 14, 2020
    Assignee: PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION
    Inventors: Young-Hwan Yoo, Sungryul Kim
  • Patent number: 10686413
    Abstract: A low noise amplifier circuit includes a first low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among first and second band signals; a second low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among third and fourth band signals; an output DPDT circuit including a first input terminal connected to the first low noise amplifier, a second input terminal connected to the second low noise amplifier, and a first output terminal and a second output terminal for selectively outputting signals input through the first input terminal and the second input terminal; and a control circuit performing an amplification control and a switching control for the first and second low noise amplifiers and the output DPDT circuit in response to a predetermined communications scheme.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: June 16, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Hwan Yoo, Jong Mo Lim, Yoo Sam Na, Hyun Jin Yoo, Hyung Jun Cho, Yoo Hwan Kim
  • Publication number: 20200157672
    Abstract: Zn alloy plated steel material having excellent weldability and processed-part corrosion resistance and a method for production of Zn alloy plated steel material are provided. In the Zn alloy plated steel material comprising base steel material and a Zn alloy plating layer, the Zn alloy plating layer includes, by wt %, Al: 0.1-5.0%, Mg: 0.1-5.0%, as well as a remainder of Zn and inevitable impurities. The Zn alloy plated steel material includes a lower interface layer and an upper interface layer between the base steel material and the Zn alloy plating layer, wherein the lower interface layer is formed on the base steel material and has a dense structure, and the upper interface layer is formed on the lower interface layer and has a network-type or island-type structure.
    Type: Application
    Filed: January 27, 2020
    Publication date: May 21, 2020
    Inventors: Min-Suk OH, Sang-Heon KIM, Tae-Chul KIM, Jong-Sang KIM, Hyun-Chu YUN, Bong-Hwan YOO, Il-Ryoung SOHN
  • Publication number: 20200119424
    Abstract: A directional coupler circuit includes a signal line disposed between a first terminal and a second terminal; a coupling line comprising a first end terminal and a second end terminal, and disposed to be coupled to the signal line; a switching circuit connecting the first end terminal and a coupling port to each other to extract a first coupling signal in a first coupling mode, and connecting the second end terminal and the coupling port to extract a second coupling signal in a second coupling mode; and a phase compensating circuit configured to compensate for a phase difference between the coupling port and a first isolation port in the first coupling mode, or compensate for a phase difference between the coupling port and a second isolation port in the second coupling mode.
    Type: Application
    Filed: May 24, 2019
    Publication date: April 16, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Mo LIM, Yoo Sam NA, Hyun Hwan YOO, Hyun Jin YOO, Hyung Jun CHO, Yoo Hwan KIM
  • Publication number: 20200112470
    Abstract: A Long Range (LoRa) communication system with an improved data rate and method thereof are provided. When a packet to be transmitted is received, a transmission device determines a transmission scheme. When the determined transmission scheme is an enhanced transmission scheme, the transmission device transmits a preamble signal indicating that a packet is to be transmitted using the enhanced transmission scheme, converts n-th data of the packet to an up-chirp signal, converts (n+1)-th data of the packet to a down-chirp signal, generates a transmission signal by adding the n-th data converted to the up-chirp signal and the (n+1)-th data converted to the down-chirp signal, and transmits the transmission signal to a reception device.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 9, 2020
    Inventors: Young-Hwan YOO, Sungryul KIM
  • Patent number: 10584407
    Abstract: Zn alloy plated steel material having excellent weldability and processed-part corrosion resistance and a method for production of Zn alloy plated steel material are provided. In the Zn alloy plated steel material comprising base steel material and a Zn alloy plating layer, the Zn alloy plating layer includes, by wt %, Al: 0.1-5.0%, Mg: 0.1-5.0%, as well as a remainder of Zn and inevitable impurities. The Zn alloy plated steel material includes a lower interface layer and an upper interface layer between the base steel material and the Zn alloy plating layer, wherein the lower interface layer is formed on the base steel material and has a dense structure, and the upper interface layer is formed on the lower interface layer and has a network-type or island-type structure.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: March 10, 2020
    Assignee: POSCO
    Inventors: Min-Suk Oh, Sang-Heon Kim, Tae-Chul Kim, Jong-Sang Kim, Hyun-Chu Yun, Bong-Hwan Yoo, Il-Ryoung Sohn
  • Publication number: 20200059210
    Abstract: An amplifying device includes: an amplifying circuit connected between an input terminal and an output terminal and amplifying a signal input in an amplification mode; and a bypass circuit including a filter connected to a bypass path for bypassing the amplifying circuit, wherein the bypass path is in an off-state in the amplification mode and is in an on-state in a bypass mode, and the filter bypasses an input high-frequency signal to ground, in the amplification mode.
    Type: Application
    Filed: February 22, 2019
    Publication date: February 20, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyung Jun CHO, Hyun Jin Yoo, Jong Mo Lim, Hyun Hwan Yoo, Yoo Sam Na, Yoo Hwan Kim
  • Patent number: 10550457
    Abstract: Zn alloy plated steel material having excellent weldability and processed-part corrosion resistance and a method for production of Zn alloy plated steel material are provided. In the Zn alloy plated steel material comprising base steel material and a Zn alloy plating layer, the Zn alloy plating layer includes, by wt %, Al: 0.1-5.0%, Mg: 0.1-5.0%, as well as a remainder of Zn and inevitable impurities. The Zn alloy plated steel material includes a lower interface layer and an upper interface layer between the base steel material and the Zn alloy plating layer, wherein the lower interface layer is formed on the base steel material and has a dense structure, and the upper interface layer is formed on the lower interface layer and has a network-type or island-type structure.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: February 4, 2020
    Assignee: POSCO
    Inventors: Min-Suk Oh, Sang-Heon Kim, Tae-Chul Kim, Jong-Sang Kim, Hyun-Chu Yun, Bong-Hwan Yoo, Il-Ryoung Sohn
  • Publication number: 20200034525
    Abstract: An apparatus and a method for measuring the security strength of a lock pattern applied to a terminal device are disclosed. The disclosed apparatus may include: a CCI monitoring part configured to read cache coherence information associated with a touch made over a multiple number of points implementing a lock pattern inputted by a user from a CCI (cache coherence interconnect); a computation part configured to compute a multiple number of similar lock pattern candidates by using the read cache coherence information; and a measurement part configured to measure the security strength of the inputted lock pattern by using the multiple number of similar lock pattern candidates.
    Type: Application
    Filed: November 14, 2018
    Publication date: January 30, 2020
    Inventors: Chuck YOO, Young Pil KIM, See Hwan YOO, Kyoung Woon LEE
  • Patent number: 10544497
    Abstract: A Zn alloy plated steel sheet having excellent phosphatability and spot weldability and a method for manufacturing the same are provided. In the Zn alloy plated steel sheet including a base steel sheet and a Zn alloy plating layer, the Zn alloy plating layer includes, by wt %, Al: 0.5-2.8%, Mg: 0.5-2.8%, and a remainder of Zn and inevitable impurities, and a cross-sectional structure of the Zn alloy plating layer includes, by area percentage, more than 50% of a Zn single phase structure and less than 50% of a Zn—Al—Mg-based intermetallic compound. A surface structure of the Zn alloy plating layer includes, by area percentage, 40% or less of a Zn single phase structure and 60% or more of a Zn—Al—Mg-based intermetallic compound.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: January 28, 2020
    Assignee: POSCO
    Inventors: Min-Suk Oh, Sang-Heon Kim, Tae-Chul Kim, Jong-Sang Kim, Bong-Hwan Yoo, Hyun-Chu Yun
  • Patent number: 10530628
    Abstract: A Long Range (LoRa) communication system with an improved data rate and method thereof are provided. When a packet to be transmitted is received, a transmission device determines a transmission scheme. When the determined transmission scheme is an enhanced transmission scheme, the transmission device transmits a preamble signal indicating that a packet is to be transmitted using the enhanced transmission scheme, converts n-th data of the packet to an up-chirp signal, converts (n+1)-th data of the packet to a down-chirp signal, generates a transmission signal by adding the n-th data converted to the up-chirp signal and the (n+1)-th data converted to the down-chirp signal, and transmits the transmission signal to a reception device.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: January 7, 2020
    Assignee: PUSAN NATIONAL UNIVERSITY INDUSTRY—UNIVERSITY COOPERATION FOUNDATION
    Inventors: Young-Hwan Yoo, Sungryul Kim
  • Patent number: 10505517
    Abstract: A radio frequency switch circuit is described including a radio frequency switch and a coupler. The radio frequency switch includes a first band switch circuit connected between a first signal port and a common port, and configured to switch a first band signal. The coupler includes a first coupling wiring, disposed adjacent to a signal wiring formed between the common port of the radio frequency switch and an antenna port, and configured to form a first coupling signal with the signal wiring. A resonant frequency of the first coupling wiring is based on an inductance of the first coupling wiring and a capacitance of the radio frequency switch.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: December 10, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo Sam Na, Jong Mo Lim, Yoo Hwan Kim, Hyun Hwan Yoo, Hyun Jin Yoo, Seong Jong Cheon
  • Publication number: 20190363680
    Abstract: An amplifying apparatus includes a variable gain amplifying circuit configured to operate in a gain mode selected from a plurality of gain modes in response to a first control signal during operation in an amplification mode, a variable attenuation circuit configured to have an attenuation value that is adjusted in response to a second control signal, and a phase compensation value which compensates for a phase distortion in the selected gain mode, and a control circuit configured to control the selecting of the gain mode, the adjusting of the attenuation value and the phase compensation value, based on the first and second control signals.
    Type: Application
    Filed: October 24, 2018
    Publication date: November 28, 2019
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyun Jin YOO, Jong Mo LIM, Yoo Sam NA, Hyung Jun CHO, Yoo Hwan KIM, Hyun Hwan YOO
  • Patent number: 10490703
    Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: November 26, 2019
    Assignee: LUMENS CO., LTD.
    Inventors: Tae Kyung Yoo, Myeong Kook Gong, Yong Wook Cho, Min Pyo Kim, Sung Hwan Yoo, Kyoung Min Kim
  • Patent number: 10492106
    Abstract: Provided are an adaptive data rate control method and an adaptive data rate control system. The adaptive data rate control method may include collecting a data rate used by each of terminals connected to a network through a gateway; counting the number of terminals for each section of the data rate; comparing the counted number of terminals for each section to the optimal number of terminals that are allocated to a corresponding section based on an overall network throughput; determining a terminal included in a mismatch section as a result of the comparing as a target terminal of which the data rate is to be controlled; and transmitting a command packet for controlling the data rate to the target terminal through the gateway.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: November 26, 2019
    Assignee: PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION
    Inventors: Young-Hwan Yoo, Sungryul Kim
  • Publication number: 20190348961
    Abstract: A coupler circuit includes: a signal line disposed between a first terminal and a second terminal; a coupling line disposed between a coupling port and an isolation port such that the coupling line is coupled to the signal line and is configured to extract a coupling signal from the signal line; and a coupling adjusting circuit connected to the coupling port and the isolation port, and configured to reduce changes in an amount of coupling according to a change in a frequency band of a signal passing through the signal line.
    Type: Application
    Filed: October 26, 2018
    Publication date: November 14, 2019
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Mo LIM, Hyun Jin YOO, Yoo Sam NA, Hyun Hwan YOO, Hyung Jun CHO, Yoo Hwan KIM