Patents by Inventor Hyeohn KIM

Hyeohn KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive switching memory device based on multi-inputs
    Patent number: 11437570
    Abstract: A resistive switching memory device according to an exemplary embodiment includes: a first electrode; a second electrode formed to be separated from the first electrode; and an insulating layer formed near the first electrode and the second electrode, and changed to one of a high resistance state and a low resistance state when a conductive filament is controlled by a change of external humidity or a voltage applied through the first electrode or the second electrode.
    Type: Grant
    Filed: July 17, 2020
    Date of Patent: September 6, 2022
    Assignees: YONSEI UNIVERSITY, UNIVERSITY—INDUSTRY FOUNDATION (UIF), SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Ki Tae Nam, Ouk Hyun Cho, Jang-Yeon Kwon, Min-Kyu Song, Seok Namgung, Hyeohn Kim, Yoon Ho Lee
  • RESISTIVE SWITCHING MEMORY DEVICE BASED ON MULTI-INPUTS
    Publication number: 20210050514
    Abstract: A resistive switching memory device according to an exemplary embodiment includes: a first electrode; a second electrode formed to be separated from the first electrode; and an insulating layer formed near the first electrode and the second electrode, and changed to one of a high resistance state and a low resistance state when a conductive filament is controlled by a change of external humidity or a voltage applied through the first electrode or the second electrode.
    Type: Application
    Filed: July 17, 2020
    Publication date: February 18, 2021
    Inventors: Ki Tae NAM, Ouk Hyun CHO, Jang-Yeon KWON, Min-Kyu SONG, Seok NAMGUNG, Hyeohn KIM, Yoon Ho LEE