Patents by Inventor HYEON-MIN CHO
HYEON-MIN CHO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240068091Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.Type: ApplicationFiled: January 5, 2022Publication date: February 29, 2024Applicant: EGTM Co., Ltd.Inventors: Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Ji Yeon HAN, Ju Hwan JEONG, Hyeon Sik CHO
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Patent number: 11398581Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.Type: GrantFiled: November 2, 2018Date of Patent: July 26, 2022Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
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Patent number: 11239394Abstract: Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light inType: GrantFiled: March 17, 2017Date of Patent: February 1, 2022Assignee: LG INNOTEK CO., LTD.Inventors: Sun Woo Park, Myung Ho Han, Hyeon Min Cho, June O Song, Chung Song Kim, Ji Hyung Moon, Sang Youl Lee
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Patent number: 11158668Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.Type: GrantFiled: September 19, 2018Date of Patent: October 26, 2021Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Yong Tae Moon, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
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Publication number: 20210036187Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.Type: ApplicationFiled: November 2, 2018Publication date: February 4, 2021Applicant: LG INNOTEK CO., LTD.Inventors: Sang Youl LEE, Chung Song KIM, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
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Patent number: 10845714Abstract: An exposure method includes exposing a substrate to form a first pattern on a first layer, measuring a first alignment value of the first pattern, generating first correction data by using the first alignment value, storing the first correction data and exposing the substrate to form a second pattern on a second layer disposed on the first layer by using the first correction data.Type: GrantFiled: November 10, 2017Date of Patent: November 24, 2020Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Ik-Han Oh, Seung-Kyu Lee, Hyeon-Min Cho
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Patent number: 10790330Abstract: One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.Type: GrantFiled: November 24, 2017Date of Patent: September 29, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
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Publication number: 20200286949Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.Type: ApplicationFiled: September 19, 2018Publication date: September 10, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Sang Youl LEE, Chung Song KIM, Yong Tae MOON, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
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Patent number: 10755981Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.Type: GrantFiled: January 5, 2018Date of Patent: August 25, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Chung Song Kim, Ji Hyung Moon, Sun Woo Park, Hyeon Min Cho
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Publication number: 20200127173Abstract: Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light inType: ApplicationFiled: March 17, 2017Publication date: April 23, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Sun Woo PARK, Myung Ho HAN, Hyeon Min CHO, June O SONG, Chung Song KIM, Ji Hyung MOON, Sang Youl LEE
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Publication number: 20190378873Abstract: One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.Type: ApplicationFiled: November 24, 2017Publication date: December 12, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Sang Youl LEE, Chung Song KIM, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
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Publication number: 20190378760Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.Type: ApplicationFiled: January 5, 2018Publication date: December 12, 2019Inventors: Sang Youl LEE, Chung Song KIM, Ji Hyung MOON, Sun Woo PARK, Hyeon Min CHO
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Publication number: 20180067404Abstract: An exposure method includes exposing a substrate to form a first pattern on a first layer, measuring a first alignment value of the first pattern, generating first correction data by using the first alignment value, storing the first correction data and exposing the substrate to form a second pattern on a second layer disposed on the first layer by using the first correction data.Type: ApplicationFiled: November 10, 2017Publication date: March 8, 2018Inventors: IK-HAN OH, SEUNG-KYU LEE, HYEON-MIN CHO
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Patent number: 9841686Abstract: An exposure method includes exposing a substrate to form a first pattern on a first layer, measuring a first alignment value of the first pattern, generating first correction data by using the first alignment value, storing the first correction data and exposing the substrate to form a second pattern on a second layer disposed on the first layer by using the first correction data.Type: GrantFiled: June 16, 2015Date of Patent: December 12, 2017Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Ik-Han Oh, Seung-Kyu Lee, Hyeon-Min Cho
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Publication number: 20160187790Abstract: An exposure method includes exposing a substrate to form a first pattern on a first layer, measuring a first alignment value of the first pattern, generating first correction data by using the first alignment value, storing the first correction data and exposing the substrate to form a second pattern on a second layer disposed on the first layer by using the first correction data.Type: ApplicationFiled: June 16, 2015Publication date: June 30, 2016Inventors: IK-HAN OH, SEUNG-KYU LEE, HYEON-MIN CHO