Abstract: A novel compound for a capping layer, and an organic light-emitting device containing the same are disclosed.

Abstract: The present disclosure relates to an organic light-emitting diode and, more particularly, to an organic-light-emitting diode comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer intercalated between the first electrode and the second electrode, wherein the light-emitting layer comprises at least one of the amine compounds represented by the following Chemical Formula A and at least one of the anthracene compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A to C are the same as in the specification.

Abstract: Semiconductor packages and methods of fabricating the same are provided. The semiconductor package includes a first package substrate including a first area, a first semiconductor chip mounted on the first area, a second package substrate disposed on an upper surface of the first semiconductor chip and including a second area and a first hole penetrating through the second area, a second semiconductor chip mounted on the second area, a connection member electrically connecting the first package substrate and the second package substrate and between the first package substrate and the second package substrate, and a mold film covering the second semiconductor chip on the second package substrate, filling the first hole, and covering the first semiconductor chip and the connection member on the first package substrate.

Abstract: An image sensor is provided. An image sensor includes: a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region; a photoelectric conversion element provided inside the substrate on the boundary region; a passivation layer provided on the substrate; a grid trench formed on the boundary region of the substrate and extending from an upper surface of the passivation layer toward an inside of the passivation layer; grid patterns, each of the grid patterns being provided on the passivation layer on each of the active pixel sensor region and the boundary region of the substrate, at least a part of a grid pattern being provided inside the grid trench; and a color filter provided between the grid patterns.

Abstract: Disclosed are an anode including a core part and a binder and a secondary battery including the same. Particularly, a coating layer including a polymer is provided between the core part and the binder and thus blocks electron transport paths from the core part to the binder. Thereby, decomposition of the binder is suppressed, and thus, the charge capacity and the initial Coulombic efficiency of the secondary battery are increased.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: The present invention relates to a composition for preventing or treating transplantation rejection or a transplantation rejection disease, comprising a novel compound and a calcineurin inhibitor. A co-administration of the present invention 1) reduces the activity of pathogenic Th1 cells or Th17 cells, 2) increases the activity of Treg cells, 3) has an inhibitory effect against side effects, such as tissue damage, occurring in the sole administration thereof, 4) inhibits various pathogenic pathways, 5) inhibits the cell death of inflammatory cells, and 6) increases the activity of mitochondria, in an in vivo or in vitro allogenic model, a transplantation rejection disease model, a skin transplantation model, and a liver-transplanted patient, and thus inhibits transplantation rejection along with mitigating side effects possibly occurring in the administration of a conventional immunosuppressant alone.

Abstract: A high-voltage battery control apparatus includes a plurality of high-voltage battery controllers configured to respectively monitor states of a plurality of high-voltage batteries included in one high-voltage battery pack depending on a predetermined period for monitoring the high-voltage battery pack, wherein the high-voltage battery controllers are configured to transition state of the plurality of high-voltage battery controllers together to an end state when a high-voltage battery controller among the high-voltage battery controllers, which has completed a monitoring operation, first waits until all monitoring operations of the high-voltage battery controllers that have not yet completed monitoring operations are completed and then all the monitoring operations of the high-voltage battery controllers are completed.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.

Abstract: The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.

Abstract: Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.

Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.

Abstract: Provided are a polysiloxane-based compound, a selective etching composition with respect to a silicon nitride layer including the polysiloxane-based compound, and a method of manufacturing a semiconductor device including the etching composition. The silicon nitride layer etching composition including the polysiloxane-based compound may selectively etch the silicon nitride layer relative to a silicon oxide layer, and have a significantly excellent etch selectivity ratio, and a small change in etch rate and a small change in etch selectivity ratio with respect to the silicon nitride layer even when time for using the composition increases or the composition is repeatedly used.

Abstract: Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.

Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.