Patents by Inventor Hyeon-Woo Park

Hyeon-Woo Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240190810
    Abstract: A novel compound for a capping layer, and an organic light-emitting device containing the same are disclosed.
    Type: Application
    Filed: December 29, 2023
    Publication date: June 13, 2024
    Inventors: Ho Wan HAM, Hyun Cheol AN, Hee Joo KIM, Dong Jun KIM, Jeong Woo HAN, Hyung Jin LEE, Ja Eun ANN, Dong Yuel KWON, Ill Hun CHO, Bo Ra LEE, Yeong Rong PARK, Il Soo OH, Dae Woong LEE, Hyeon Jeong IM
  • Patent number: 12010915
    Abstract: The present disclosure relates to an organic light-emitting diode and, more particularly, to an organic-light-emitting diode comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer intercalated between the first electrode and the second electrode, wherein the light-emitting layer comprises at least one of the amine compounds represented by the following Chemical Formula A and at least one of the anthracene compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A to C are the same as in the specification.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: June 11, 2024
    Assignee: SFC CO., LTD.
    Inventors: Soon-Wook Cha, Sang-Woo Park, Jung-Ho Yoo, Ji-Hwan Kim, Sung Woo Kim, Hyeon Jun Jo, Young-Hwan Park
  • Publication number: 20240178188
    Abstract: Semiconductor packages and methods of fabricating the same are provided. The semiconductor package includes a first package substrate including a first area, a first semiconductor chip mounted on the first area, a second package substrate disposed on an upper surface of the first semiconductor chip and including a second area and a first hole penetrating through the second area, a second semiconductor chip mounted on the second area, a connection member electrically connecting the first package substrate and the second package substrate and between the first package substrate and the second package substrate, and a mold film covering the second semiconductor chip on the second package substrate, filling the first hole, and covering the first semiconductor chip and the connection member on the first package substrate.
    Type: Application
    Filed: August 1, 2023
    Publication date: May 30, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Myung-Sung KANG, Kyong Hwan KOH, Jin-Woo PARK, Chung Sun LEE, Hyeon Jun JIN
  • Patent number: 11996420
    Abstract: An image sensor is provided. An image sensor includes: a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region; a photoelectric conversion element provided inside the substrate on the boundary region; a passivation layer provided on the substrate; a grid trench formed on the boundary region of the substrate and extending from an upper surface of the passivation layer toward an inside of the passivation layer; grid patterns, each of the grid patterns being provided on the passivation layer on each of the active pixel sensor region and the boundary region of the substrate, at least a part of a grid pattern being provided inside the grid trench; and a color filter provided between the grid patterns.
    Type: Grant
    Filed: August 18, 2021
    Date of Patent: May 28, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Han Seok Kim, Byung Jun Park, Hyeon Ho Kim, Young Woo Chung
  • Publication number: 20240170678
    Abstract: Disclosed are an anode including a core part and a binder and a secondary battery including the same. Particularly, a coating layer including a polymer is provided between the core part and the binder and thus blocks electron transport paths from the core part to the binder. Thereby, decomposition of the binder is suppressed, and thus, the charge capacity and the initial Coulombic efficiency of the secondary battery are increased.
    Type: Application
    Filed: March 9, 2023
    Publication date: May 23, 2024
    Inventors: Yong Il Cho, Geun Ho Choi, Hannah Song, Hyun Jin Kim, Hyeon Ha Lee, Chan Bum Park, Jang Wook Choi, Tae Geun Lee, Ji Woo An
  • Patent number: 11987740
    Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: May 21, 2024
    Assignee: ENF Technology Co., Ltd.
    Inventors: Dong Hyun Kim, Hyeon Woo Park, Sung Jun Hong, Myung Ho Lee, Myung Geun Song, Hoon Sik Kim, Jae Jung Ko, Myong Euy Lee, Jun Hyeok Hwang
  • Patent number: 11969397
    Abstract: The present invention relates to a composition for preventing or treating transplantation rejection or a transplantation rejection disease, comprising a novel compound and a calcineurin inhibitor. A co-administration of the present invention 1) reduces the activity of pathogenic Th1 cells or Th17 cells, 2) increases the activity of Treg cells, 3) has an inhibitory effect against side effects, such as tissue damage, occurring in the sole administration thereof, 4) inhibits various pathogenic pathways, 5) inhibits the cell death of inflammatory cells, and 6) increases the activity of mitochondria, in an in vivo or in vitro allogenic model, a transplantation rejection disease model, a skin transplantation model, and a liver-transplanted patient, and thus inhibits transplantation rejection along with mitigating side effects possibly occurring in the administration of a conventional immunosuppressant alone.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: April 30, 2024
    Assignee: THE CATHOLIC UNIVERSITY OF KOREA INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Mi-La Cho, Dong-Yun Shin, Jong-Young Choi, Chul-Woo Yang, Sung-Hwan Park, Seon-Yeong Lee, Min-Jung Park, Joo-Yeon Jhun, Se-Young Kim, Hyeon-Beom Seo, Jae-Yoon Ryu, Keun-Hyung Cho
  • Publication number: 20240123827
    Abstract: A high-voltage battery control apparatus includes a plurality of high-voltage battery controllers configured to respectively monitor states of a plurality of high-voltage batteries included in one high-voltage battery pack depending on a predetermined period for monitoring the high-voltage battery pack, wherein the high-voltage battery controllers are configured to transition state of the plurality of high-voltage battery controllers together to an end state when a high-voltage battery controller among the high-voltage battery controllers, which has completed a monitoring operation, first waits until all monitoring operations of the high-voltage battery controllers that have not yet completed monitoring operations are completed and then all the monitoring operations of the high-voltage battery controllers are completed.
    Type: Application
    Filed: April 14, 2023
    Publication date: April 18, 2024
    Inventors: Geon Woo Park, Young Tae Ko, Hyeon Jun Kim, Byung Mo Kang, Jong Seo Yoon
  • Patent number: 11939505
    Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 26, 2024
    Assignee: ENF Technology Co., Ltd.
    Inventors: Dong Hyun Kim, Hyeon Woo Park, Sung Jun Hong, Myung Ho Lee, Myung Geun Song, Hoon Sik Kim, Jae Jung Ko, Myong Euy Lee, Jun Hyeok Hwang
  • Publication number: 20240096888
    Abstract: A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.
    Type: Application
    Filed: September 8, 2022
    Publication date: March 21, 2024
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Hae Ju CHOI, Tae Ho KANG, Chan Woo KANG, Hyeon Je SON, Jin Hong PARK, Sung Joo LEE, Sung Pyo BAEK
  • Publication number: 20220396733
    Abstract: The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.
    Type: Application
    Filed: June 3, 2022
    Publication date: December 15, 2022
    Inventors: Hyeon Woo PARK, Seok Hyeon NAM, Myung Ho LEE, Myung Geun SONG
  • Publication number: 20220089951
    Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 24, 2022
    Inventors: Dong Hyun KIM, Hyeon Woo PARK, Sung Jun HONG, Myung Ho LEE, Myung Geun SONG, Hoon Sik KIM, Jae Jung KO, Myong Euy LEE, Jun Hyeok HWANG
  • Publication number: 20220089952
    Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 24, 2022
    Inventors: Dong Hyun KIM, Hyeon Woo PARK, Sung Jun HONG, Myung Ho LEE, Myung Geun SONG, Hoon Sik KIM, Jae Jung KO, Myong Euy LEE, Jun Hyeok HWANG
  • Publication number: 20220089953
    Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 24, 2022
    Inventors: Dong Hyun KIM, Hyeon Woo PARK, Sung Jun HONG, Myung Ho LEE, Myung Geun SONG, Hoon Sik KIM, Jae Jung KO, Myong Euy LEE
  • Patent number: 11149201
    Abstract: Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: October 19, 2021
    Assignee: ENF TECHNOLOGY CO., LTD.
    Inventors: Dong Hyun Kim, Hyeon Woo Park, Du Won Lee, Jang Woo Cho, Myung Ho Lee, Myung Geun Song
  • Patent number: 11091695
    Abstract: Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: August 17, 2021
    Assignee: ENF TECHNOLOGY CO., LTD.
    Inventors: Hye Hee Lee, Hyeon Woo Park, Myung Ho Lee, Myung Geun Song
  • Patent number: 10982144
    Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: April 20, 2021
    Assignee: ENF TECHNOLOGY CO., LTD.
    Inventors: Dong Hyun Kim, Hyeon Woo Park, Jang Woo Cho, Tae Ho Kim, Myung Ho Lee, Myung Geun Song
  • Patent number: 10920142
    Abstract: Provided are a polysiloxane-based compound, a selective etching composition with respect to a silicon nitride layer including the polysiloxane-based compound, and a method of manufacturing a semiconductor device including the etching composition. The silicon nitride layer etching composition including the polysiloxane-based compound may selectively etch the silicon nitride layer relative to a silicon oxide layer, and have a significantly excellent etch selectivity ratio, and a small change in etch rate and a small change in etch selectivity ratio with respect to the silicon nitride layer even when time for using the composition increases or the composition is repeatedly used.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: February 16, 2021
    Assignee: ENF TECHNOLOGY CO., LTD.
    Inventors: Dong Hyun Kim, Hyeon Woo Park, Du Won Lee, Jang Woo Cho, Myung Ho Lee
  • Publication number: 20200339879
    Abstract: Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.
    Type: Application
    Filed: April 22, 2020
    Publication date: October 29, 2020
    Inventors: Hye Hee LEE, Hyeon Woo PARK, Myung Ho LEE, Myung Geun SONG
  • Publication number: 20200071614
    Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.
    Type: Application
    Filed: August 30, 2019
    Publication date: March 5, 2020
    Inventors: Dong Hyun KIM, Hyeon Woo PARK, Jang Woo CHO, Tae Ho KIM, Myung Ho LEE, Myung Geun SONG