Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCx in which the atomic percentage of carbon is within a range of 25% to 45%.

Abstract: This application relates to a method for manufacturing a pellicle for extreme ultraviolet lithography. In one aspect, the method includes forming a support layer of a silicon nitride material on a silicon substrate, and forming a core layer of a graphene material on the support layer. The method may also include forming a graphene defect healing layer on the core layer by selectively forming a material of MeOxNy (Me is one of Si, Al, Ti, Zr, and Hf, x+y=2) at a grain boundary of the core layer in an atomic layer deposition process using heat in order to heal defects generated in graphene forming the core layer without additional damage to the graphene. The method may further include a capping layer on the graphene defect healing layer, wherein a central portion of the silicon substrate under the support layer is removed to form an opening partially exposing the support layer.

Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCX (0.25<x<0.45).

Abstract: This application relates to a pellicle for extreme ultraviolet lithography used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer formed of an M-? material in which M is combined with ?. Here, M is one of Si, Zr, Mo, Ru, Y, W, Ti, Ir, or Nb, and a is at least two of B, N, C, O, or F.

Abstract: This application relates to a pellicle for extreme ultraviolet lithography containing amorphous carbon and a manufacturing method thereof. In one aspect, the pellicle includes a substrate having an opening formed in a central portion, a support layer formed on the substrate to cover the opening, and a pellicle layer formed on the support layer and containing amorphous carbon. The pellicle layer may include a core layer formed on the support layer, and a capping layer formed on the core layer and may further include a buffer layer. At least one of the core layer, the capping layer, or the buffer layer may be an amorphous carbon layer.

Abstract: This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

Abstract: This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-temperature direct growth method of multilayer graphene. In one aspect, the method includes forming an etch stopper on a substrate, forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N). The method may also include forming a metal catalyst layer on the seed layer; forming an amorphous carbon layer on the metal catalyst layer, and directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.

Abstract: A pellicle for extreme ultraviolet lithography containing molybdenum carbide is disclosed. The pellicle includes a substrate having an opening formed in a central portion, and a pellicle layer formed on the substrate to cover the opening and including a molybdenum carbide containing layer that contains molybdenum carbide expressed as MoC1-x (0<x<1). The pellicle layer includes a core layer formed on the substrate to cover the opening, and the core layer may be the molybdenum carbide containing layer.

Abstract: A pellicle for extreme ultraviolet lithography has an extreme ultraviolet transmittance of 90% or more and also has thermal stability, mechanical stability, and chemical durability. The pellicle includes a support layer and a pellicle layer. The support layer has an opening formed in a central portion thereof. The pellicle layer is formed on the support layer to cover the opening and includes ZrBx (2<x<16).

Abstract: This application relates to a method for manufacturing a pellicle for extreme ultraviolet lithography. In one aspect, the method includes forming a support layer of a silicon nitride material on a silicon substrate, and forming a core layer of a graphene material on the support layer. The method may also include forming a graphene defect healing layer on the core layer by selectively forming a material of MeOxNy (Me is one of Si, Al, Ti, Zr, and Hf, x+y=2) at a grain boundary of the core layer in an atomic layer deposition process using heat in order to heal defects generated in graphene forming the core layer without additional damage to the graphene. The method may further include a capping layer on the graphene defect healing layer, wherein a central portion of the silicon substrate under the support layer is removed to form an opening partially exposing the support layer.

Abstract: This application relates to a method for direct growth of multilayer graphene used as a core layer of a pellicle for extreme ultraviolet lithography. This application also relates to a method for manufacturing the pellicle for extreme ultraviolet lithography by using the multilayer graphene direct growth method. The multilayer graphene direct growth method may include forming few-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the few-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The method may also include directly growing multilayer graphene from the few-layer graphene used as a seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment.

Abstract: A pellicle for extreme ultraviolet lithography has an extreme ultraviolet transmittance of 90% or more and also has thermal stability, mechanical stability, and chemical durability. The pellicle includes a support layer and a pellicle layer. The support layer has an opening formed in a central portion thereof. The pellicle layer is formed on the support layer to cover the opening and includes ZrBx (2<x<16).

Abstract: A graphene fabrication method which can obtain graphene of high quality and good characteristics by adjusting a size and a shape of a domain of graphene is provided. The method for fabricating graphene according to the present disclosure includes: a graphene pattern forming step of forming a graphene forming pattern on a graphene growth substrate; and a graphene forming step of forming a graphene layer on the graphene growth substrate having the graphene forming pattern formed thereon.

Abstract: The present disclosure relates to a manufacturing method of a graphene fiber, a graphene fiber manufactured by the same method, and use thereof. The graphene fiber formed by using graphenes of linear pattern can be applied to various fields such as an electric wire and coaxial cable.

Abstract: The present invention relates to a method for forming a graphene protective film having gas and moisture barrier properties, to a graphene protective film formed by the method, and to the use thereof. A single-layer or multilayer graphene protective film can be used as a material for a barrier coating or bags, and improves the gas and moisture barrier properties of a variety of devices in a wide array of industrial fields to thereby maintain the electrical characteristics of devices over a long period of time.

Abstract: A graphene roll-to-roll coating apparatus and a graphene roll-to-roll coating method are provided on the basis of a continuous process.

Abstract: A graphene fabrication method which can obtain graphene of high quality and good characteristics by adjusting a size and a shape of a domain of graphene is provided. The method for fabricating graphene according to the present disclosure includes: a graphene pattern forming step of forming a graphene forming pattern on a graphene growth substrate; and a graphene forming step of forming a graphene layer on the graphene growth substrate having the graphene forming pattern formed thereon.

Abstract: A graphene roll-to-roll coating apparatus and a graphene roll-to-roll coating method are provided on the basis of a continuous process.

Abstract: A graphene roll-to-roll coating apparatus and a graphene roll-to-roll coating method are provided on the basis of a continuous process.

Abstract: The invention relates to an optic fiber having a core in which carbon nano-structures are formed at a predetermined locus, a fiber optic chemical sensor using the optic fiber, and a method of forming the carbon nano-structure layer in the core of the optic fiber. The invention utilizes gas refractive index and the adsorption sensitivity of particles on the surface of the carbon nano-structure layer, and uses the carbon nano-structure layer in the core of the optic fiber as a sensor for particles of gas, liquid and the like.