Abstract: A method for forming submicroscopic patterns of a semiconductor device, which comprises: coating a photoresist film on a lower layer to be patterned; primarily exposing the photoresist film through a mask having chrome patterns to a light with an energy lower than the threshold energy for the thickness of the photoresist film; secondarily exposing the photoresist film through the mask to a light with an energy lower than the threshold energy, said mask having been shifted at a predetermined distance; subjecting the exposed photoresist film to development, to completely remove the regions in which the primarily exposed regions overlap with the secondarily exposed regions and half remove the once-exposed regions to form photoresist film patterns, each having four side walls; depositing an insulating layer entirely over the resulting structure; subjecting the insulating layer to anisotropic etch, to form insulating layer spacers at the side walls of the photoresist film patterns; and dry etching the photoresist

Abstract: A hair winder having a winding member on which the hair can be wound, a strip of foil being so attached to the winding member that the strip can be wound onto the winding member together with the hair.

Abstract: This invention relates to an impact resistant material composed of polyether-based micro-cellular polyurethane foam:more particularly, however, this invention relates to the impact resistant polyurethane foam having a new physical property, and a methods of foamed polyurethane as set forth hereunder, demonstrating a remarkable impact resistance effect and recovery force as well and furthermore, making it possible to control the specific gravity of molding in manufacture:mixing the prepolymer containing residual isocyanate or isocyanate monomer with resin consisting of ether-type polyol, plasticizer, and organic siloxane and casting this mixture for the preparation of foamed molding.