Patents by Inventor Hyeongsub Song

Hyeongsub Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device for testing characteristics of transistors and method for testing semiconductor device
    Patent number: 11088138
    Abstract: A semiconductor device for evaluating characteristics of a transistor is provided. The semiconductor device includes a substrate, an active area defined on the substrate, an insulated gate configured to be formed on the active area, a first source layer and a first drain layer configured to be formed on the active area in a first two-way direction of the gate, and a second source layer and a second drain layer configured to be formed on the active area in a second two-way direction of the gate. The first source layer, the first drain layer, and the second drain layer are formed as a first conductive type. The second source layer is formed as a second conductive type.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: August 10, 2021
    Assignee: THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC)
    Inventors: Hideok Lee, Dongjun Oh, Sungkyu Kwon, Hyeongsub Song, Soyeong Kim
  • SEMICONDUCTOR DEVICE FOR TESTING CHARACTERISTICS OF TRANSISTORS AND METHOD FOR TESTING SEMICONDUCTOR DEVICE
    Publication number: 20190172829
    Abstract: A semiconductor device for evaluating characteristics of a transistor is provided. The semiconductor device includes a substrate, an active area defined on the substrate, an insulated gate configured to be formed on the active area, a first source layer and a first drain layer configured to be formed on the active area in a first two-way direction of the gate, and a second source layer and a second drain layer configured to be formed on the active area in a second two-way direction of the gate. The first source layer, the first drain layer, and the second drain layer are formed as a first conductive type. The second source layer is formed as a second conductive type.
    Type: Application
    Filed: November 29, 2018
    Publication date: June 6, 2019
    Inventors: Hideok Lee, Dongjun Oh, Sungkyu Kwon, Hyeongsub Song, Soyeong Kim