Patents by Inventor Hyo-Jin Kim

Hyo-Jin Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11555213
    Abstract: The present disclosure relates to modified homoserine dehydrogenase and a method for producing a homoserine-derived L-amino acid using the same.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: January 17, 2023
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Hyo Jin Kim, Lan Huh, Sang Jo Lim, Hyun Ah Kim, Hyoung Joon Kim, Chang il Seo, Seung Bin Lee, Ji Sun Lee
  • Publication number: 20220387532
    Abstract: Provided are a novel yeast strain producing glutathione and a method of producing glutathione using the same.
    Type: Application
    Filed: September 18, 2020
    Publication date: December 8, 2022
    Applicant: CJ CHEILJEDANG CORPORATION
    Inventors: Cheol Woong Ha, Eun Bin Yang, Hyo Jin Kim, Hyung Joon Kim, Yeong Eun Im
  • Publication number: 20220385723
    Abstract: An apparatuses for managing access to a file stored in a remote location includes detecting an attempt for a user terminal to access the file stored in the remote location, determining a location where the file attempted to be access is to be opened, in response to a determination that the location where the file is to be opened is remote, opening the file and providing a content of the opened file to the user terminal by a file management server and in response to a determination that the location where the file is to be opened is local, processing the file to be downloaded to the user terminal by the file management server.
    Type: Application
    Filed: May 27, 2022
    Publication date: December 1, 2022
    Inventors: Seung Min BAEK, Yee Soo AHN, Jeong Woo KIM, Hyo Jin KIM
  • Patent number: 11488953
    Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: November 1, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Seok Ha, Hyun Seung Song, Hyo Jin Kim, Kyoung Mi Park, Guk Il An
  • Publication number: 20220336661
    Abstract: A semiconductor device includes a first impurity region on a substrate; a channel pattern protruding from an upper surface of the substrate, the channel pattern extending in a first direction substantially parallel to the upper surface of the substrate; a second impurity region on the channel pattern, the second impurity region covering an entire upper surface of the channel pattern; a gate structure on a sidewall of the channel pattern and the substrate adjacent to the channel pattern; a first contact pattern on the second impurity region; a second contact pattern that is electrically connected to the gate structure; and a spacer between the first contact pattern and the second contact pattern. The spacer completely surrounds the second contact pattern in plan view, and the first contact pattern partially surrounds the second contact pattern in plan view.
    Type: Application
    Filed: July 5, 2022
    Publication date: October 20, 2022
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Hyun-Seung SONG, Hyo-Jin KIM, Kyoung-Mi PARK, Hwi-Chan JUN, SeungSeok HA
  • Publication number: 20220274939
    Abstract: Disclosed are a dual modulator of mGluR5 and 5-HT2AR (5-HT2A receptor), and use thereof. More specifically, disclosed are a compound which acts as modulator of mGluR5 and an antagonist of 5-HT2AR at the same time, and use thereof as therapeutic agent for pain.
    Type: Application
    Filed: July 28, 2021
    Publication date: September 1, 2022
    Inventors: Dae Kyu CHOI, Hyo Jin KIM, Mi Seon BAE, Jin CHOI, Hyun Jin HEO, Yong Seok LEE, Geon Ho LEE, Mi Yon SHIM, Jin Sun PARK, Han Mi LEE
  • Publication number: 20220254650
    Abstract: Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.
    Type: Application
    Filed: November 2, 2021
    Publication date: August 11, 2022
    Inventors: Do Young CHOI, Sung Min KIM, Cheol KIM, Hyo Jin KIM, Dae Won HA, Dong Woo HAN
  • Publication number: 20220231168
    Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.
    Type: Application
    Filed: April 4, 2022
    Publication date: July 21, 2022
    Inventors: Hyo Jin KIM, Dong Woo KIM, Sang Moon LEE, Seung Hun LEE
  • Patent number: 11380791
    Abstract: A semiconductor device includes a first impurity region, a channel pattern, a second impurity region, a gate structure, a first contact pattern, a second contact pattern and a spacer. The first impurity region may be formed on a substrate. The channel pattern may protrude from an upper surface of the substrate. The second impurity region may be formed on the channel pattern. The gate structure may be formed on a sidewall of the channel pattern and the substrate adjacent to the channel pattern, and the gate structure may include a gate insulation pattern and a gate electrode. The first contact pattern may contact an upper surface of the second impurity region. The second contact pattern may contact a surface of the gate electrode. The spacer may be formed between the first and second contact patterns. The spacer may surround a portion of a sidewall of the second contact pattern, and the spacer may contact a sidewall of each of the first and second contact patterns.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: July 5, 2022
    Assignee: SAMSUNG ELECTRONICS CO.. LTD.
    Inventors: Hyun-Seung Song, Hyo-Jin Kim, Kyoung-Mi Park, Hwi-Chan Jun, Seung-Seok Ha
  • Publication number: 20220198551
    Abstract: A method for controlling a live content broadcast includes receiving, on a first online platform, information on a first set of products registered as products for sale of a user account associated with the user terminal, and receiving from a user, as a first user input, a selection of a second set of products to sell in the live content broadcast on a second online platform among the first set of products.
    Type: Application
    Filed: July 12, 2021
    Publication date: June 23, 2022
    Inventors: Jaehoon SONG, Soo Ha PARK, Mulgyeol KANG, Seung Hye LEE, Yi Seul GA, Soo Ryun SHIN, Kyung Hee YOON, Eunyoung SEO, Jee Won NAM, Hyo Jin KIM, Jun Young JANG, Nakyung LIM
  • Publication number: 20220158011
    Abstract: According to an embodiment, a transparent solar cell, a photovoltaic system including the transparent solar cell, and a method for manufacturing the transparent solar cell are provided. The transparent solar cell comprises a substrate, an adhesive layer formed on the substrate, a metal layer formed on the adhesive layer, a solar cell layer formed on the metal layer, and a coating layer formed on the solar cell layer. The solar cell layer and the metal layer include a plurality of holes having a predetermined diameter.
    Type: Application
    Filed: October 25, 2021
    Publication date: May 19, 2022
    Inventors: Hyo Jin KIM, Chae Won KIM, Gwang Ryeol PARK
  • Patent number: 11322614
    Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: May 3, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyo Jin Kim, Dong Woo Kim, Sang Moon Lee, Seung Hun Lee
  • Publication number: 20220129419
    Abstract: A method for providing metadata sharing service may include obtaining a sharing event for a predetermined range path based on a current location of a first target object, determining whether a second original name of a second target object previously registered with a name duplicating with a first original name of the first target object according to the sharing event exists in a sharing table, generating and registering a first unique name different from a second unique name for the second original name of the second target object in the sharing table in response to the existence of a second original name previously registered with a name duplicating with the first original name, and sharing a predetermined range path based on a current location of a first target object of the first unique name according to the sharing event through a virtual drive.
    Type: Application
    Filed: October 28, 2021
    Publication date: April 28, 2022
    Inventors: Jun Deok JO, Sang Uk HAN, Hyo Jin KIM
  • Patent number: 11316138
    Abstract: A manufacturing method of a display device, includes: providing a display module bendable at a bending area and including: a passivation film including a polyimide and disposed both in and outside of the bending area, and an adhesive layer attaching a display panel to the passivation film and including a first adhesive portion in the bending area and a second adhesive portion outside of the bending area; reducing an adhesive force of the first adhesive portion, by irradiating a first laser which is a CO2 laser to the adhesive layer at the bending area, to provide the first adhesive portion which has reduced adhesive force; providing a groove in the passivation film and the adhesive layer, along a boundary of the bending area; and removing the passivation film and the first adhesive portion which has the reduced adhesive force, from the display panel, at the groove.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: April 26, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Tae Hyun Sung, Woo Hyun Kim, Hyo Jin Kim
  • Patent number: 11312982
    Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.
    Type: Grant
    Filed: July 15, 2020
    Date of Patent: April 26, 2022
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Ji Sun Lee, Kwang Ho Lee, Hyo Jin Kim, Keun Chul Lee, Young Bin Hwang
  • Patent number: 11296639
    Abstract: The present invention relates to an inverter which is capable of adjusting an output frequency of a three-phase voltage output to a motor based on a result of comparison in magnitude between the minimum operating voltage of the motor and a DC link voltage applied to a DC link. The inverter includes: a measurement part configured to measure a DC link voltage applied to a DC link; a conversion part configured to convert the DC link voltage into a three-phase voltage and output the three-phase voltage to the motor; and a control part configured to make comparison in magnitude between the DC link voltage and the minimum operating voltage of the motor and adjust an output frequency of the three-phase voltage based on a result of the comparison.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: April 5, 2022
    Assignee: LSIS CO., LTD.
    Inventor: Hyo-Jin Kim
  • Publication number: 20220069128
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.
    Type: Application
    Filed: November 4, 2021
    Publication date: March 3, 2022
    Inventors: Sung Min Kim, Hyo Jin Kim, Dae Won Ha
  • Publication number: 20220056546
    Abstract: Disclosed are a method of manufacturing cage for a constant velocity joint and a cage for a constant velocity joint manufactured using the same for providing a cage having improved hardness, strength, and elongation while having a structure with a uniform core part and surface and for ensuring economic feasibility by reducing manufacturing time. The method includes a cutting operation of forming a structure having an outer shape by cutting a cylindrical pipe, forming an outer circumference of the cut structure to have a curved surface thereon, performing a turning operation on a surface of the formed structure, a punching operation of forming a window in the surface of the structure on which the turning operation is performed, a broaching operation of processing an edge of the window formed via punching, and a heat treatment operation of fully hardening the completely broached cage via austempering.
    Type: Application
    Filed: August 13, 2021
    Publication date: February 24, 2022
    Applicants: SEOHAN INDUSTRY CO., LTD., KOREA FLANGE CO., LTD.
    Inventors: Jeong Lyul PARK, Won Kew BAN, Hyo Jin KIM
  • Publication number: 20220057659
    Abstract: A liquid crystal display includes a first substrate including: a display area including a plurality of pixels on the first substrate, a non-display area which is disposed on an outside of the display area and in which a dummy wire is disposed on the first substrate, and an image input hole which is defined therein in the non-display area and in which an image input device is disposed, a second substrate facing the first substrate and including a display area and a non-display area corresponding to those of the first substrate, a liquid crystal layer interposed between the first and second substrates, and a sealant which is in the non-display area of the first and second substrates and seals the liquid crystal layer between the first and second substrates. The dummy wire is disposed near the image input hole.
    Type: Application
    Filed: November 8, 2021
    Publication date: February 24, 2022
    Inventors: Tae Hee LEE, Hyoung Joon KIM, Hyo Jin KIM, Kap Soo YOON, Jeong Uk HEO, Ji Yun HONG
  • Patent number: D944772
    Type: Grant
    Filed: June 3, 2021
    Date of Patent: March 1, 2022
    Assignee: Harman International Industries, Incorporated
    Inventor: Hyo Jin Kim