Abstract: An apparatus of tilting a seat cushion of a vehicle, includes a tilting motor, a pinion gear, a sector gear, and a tilting link which perform the tilting operation of the seat cushion and exert a binding force in a tilted state of the seat cushion and are provided to be connected to both of one side and the other side of a seat cushion frame, and has two sector gears positioned on left and right sides and connected to each other by a connection bar so that, by strengthening a binding force of the front portion of the seat cushion, it is possible to secure the safety of passengers in the event of a collision.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: A thinner composition for a reduced resist coating process includes an alkyl lactate, cyclohexanone, and an alkyl acetate, wherein an alkyl substituent of the alkyl acetate is a C1 to C5 non-ether based alkyl group.

Abstract: A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.

Abstract: A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Abstract: A thinner composition for a reduced resist coating process includes an alkyl lactate, cyclohexanone, and an alkyl acetate, wherein an alkyl substituent of the alkyl acetate is a C1 to C5 non-ether based alkyl group.

Abstract: A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

Abstract: A method of fabricating a microarray is provided, which includes providing a substrate having a surface that is protected by an acid labile protective group that includes an acetal group represented by formula (1) and has a functional group that can be coupled with a monomer of a probe; applying a photoresist including a photo acid generator to the substrate; selectively exposing the photoresist to deprotect the acid labile protective group that corresponds to an exposed region; removing the photoresist; and coupling the monomer that is combined with the acid labile protective group with the deprotected functional group. Formula (1) has the following structure: wherein, R1 denotes an alkyl group having 1 to 5 carbon atoms, R2 denotes hydrogen or a methyl group, and Y denotes a monomer or a site coupled with the substrate.

Abstract: The present invention provides compositions for forming an oligomer array and methods for using the same. Such a composition may include an acid stable polymer, a photoacid generator and an organic solvent and may allow for the selective attachment of oligormers at one or more desired positions on a substrate using long wavelength light.

Abstract: A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.

Abstract: In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Abstract: A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

Abstract: In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Abstract: A photoresist composition includes about 4% to about 10% by weight of a photoresist resin, about 0.1% to about 0.5% by weight of a photoacid generator having a sulfonium-salt cationic group and a sulfonium-salt anionic group containing a carboxyl group as a hydrophilic site and a remainder of a solvent. The photoresist composition may form a photoresist pattern having a uniform profile.

Abstract: A photoresist film is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of a cyclodextrin derivative, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent. The cyclodextrin derivative includes a ?-cyclodextrin moiety and at least one alkyl carbonate group.

Abstract: In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.