Patents by Inventor Hyo June Kim
Hyo June Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11963467Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.Type: GrantFiled: May 13, 2022Date of Patent: April 16, 2024Assignee: SK hynix Inc.Inventors: Hyo-June Kim, Hyun-Seok Kang, Chi-Ho Kim, Jae-Geun Oh
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Publication number: 20230043168Abstract: Disclosed is an invention relating to a processor-executed method for outputting a hierarchical command menu on a display depending on user inputs.Type: ApplicationFiled: October 21, 2022Publication date: February 9, 2023Inventors: Hyo June KIM, Ji Hye SEO, Hye In KIM, Ye In KIM
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Patent number: 11513662Abstract: Disclosed is an invention relating to a processor-executed method for outputting a hierarchical command menu on a display depending on user inputs.Type: GrantFiled: March 20, 2020Date of Patent: November 29, 2022Inventors: Hyo June Kim, Ji Hye Seo, Hye In Kim, Ye In Kim
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Publication number: 20220278275Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.Type: ApplicationFiled: May 13, 2022Publication date: September 1, 2022Inventors: Hyo-June KIM, Hyun-Seok KANG, Chi-Ho KIM, Jae-Geun OH
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Patent number: 11362273Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.Type: GrantFiled: October 22, 2019Date of Patent: June 14, 2022Assignee: SK hynix Inc.Inventors: Hyo-June Kim, Hyun-Seok Kang, Chi-Ho Kim, Jae-Geun Oh
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Publication number: 20220113848Abstract: Disclosed is an invention relating to a processor-executed method for outputting a hierarchical command menu on a display depending on user inputs.Type: ApplicationFiled: March 20, 2020Publication date: April 14, 2022Inventors: Hyo June KIM, Ji Hye SEO, Hye In KIM, Ye In KIM
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Patent number: 11271039Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document may include a substrate including a first portion in a first region and a second portion in a second region; a plurality of memory cells disposed over the first portion of the substrate; a first insulating layer extending over the second portion of the substrate and at least partially filling a space between adjacent ones of the plurality of memory cells; and a second insulating layer disposed over the first insulating layer. The first insulating layer has a dielectric constant smaller than that of the second insulating layer, a thermal conductivity smaller than that of the second insulating layer, or both.Type: GrantFiled: December 11, 2019Date of Patent: March 8, 2022Assignee: SK hynix Inc.Inventors: Chi-Ho Kim, Min-Seon Kang, Hyun-Seok Kang, Hyo-June Kim, Jae-Geun Oh, Su-Jin Chae
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Patent number: 10879461Abstract: In a method for fabricating an electronic device including a semiconductor memory, the method includes: forming stack structures, each of the stack structures including a variable resistance pattern; forming capping layers on the stack structures, the capping layers including an impurity; forming a gap fill layer between the stack structures; and removing the impurity from the capping layers and densifying the gap fill layer by irradiating the capping layers and the gap fill layer with ultraviolet light.Type: GrantFiled: December 5, 2019Date of Patent: December 29, 2020Assignee: SK hynix Inc.Inventors: Hyo June Kim, Chi Ho Kim, Sang Hoon Cho, Eung Rim Hwang
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Publication number: 20200373353Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document may include a substrate including a first portion in a first region and a second portion in a second region; a plurality of memory cells disposed over the first portion of the substrate; a first insulating layer extending over the second portion of the substrate and at least partially filling a space between adjacent ones of the plurality of memory cells; and a second insulating layer disposed over the first insulating layer. The first insulating layer has a dielectric constant smaller than that of the second insulating layer, a thermal conductivity smaller than that of the second insulating layer, or both.Type: ApplicationFiled: December 11, 2019Publication date: November 26, 2020Inventors: Chi-Ho KIM, Min-Seon KANG, Hyun-Seok KANG, Hyo-June KIM, Jae-Geun OH, Su-Jin CHAE
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Publication number: 20200287131Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.Type: ApplicationFiled: October 22, 2019Publication date: September 10, 2020Inventors: Hyo-June KIM, Hyun-Seok KANG, Chi-Ho KIM, Jae-Geun OH
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Publication number: 20200111956Abstract: In a method for fabricating an electronic device including a semiconductor memory, the method includes: forming stack structures, each of the stack structures including a variable resistance pattern; forming capping layers on the stack structures, the capping layers including an impurity; forming a gap fill layer between the stack structures; and removing the impurity from the capping layers and densifying the gap fill layer by irradiating the capping layers and the gap fill layer with ultraviolet light.Type: ApplicationFiled: December 5, 2019Publication date: April 9, 2020Inventors: Hyo June KIM, Chi Ho KIM, Sang Hoon CHO, Eung Rim HWANG
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Patent number: 10535819Abstract: In a method for fabricating an electronic device including a semiconductor memory, the method includes: forming stack structures, each of the stack structures including a variable resistance pattern; forming capping layers on the stack structures, the capping layers including an impurity; forming a gap fill layer between the stack structures; and removing the impurity from the capping layers and densifying the gap fill layer by irradiating the capping layers and the gap fill layer with ultraviolet light.Type: GrantFiled: March 30, 2018Date of Patent: January 14, 2020Assignee: SK HYNIX INC.Inventors: Hyo June Kim, Chi Ho Kim, Sang Hoon Cho, Eung Rim Hwang
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Publication number: 20190088871Abstract: In a method for fabricating an electronic device including a semiconductor memory, the method includes: forming stack structures, each of the stack structures including a variable resistance pattern; forming capping layers on the stack structures, the capping layers including an impurity; forming a gap fill layer between the stack structures; and removing the impurity from the capping layers and densifying the gap fill layer by irradiating the capping layers and the gap fill layer with ultraviolet light.Type: ApplicationFiled: March 30, 2018Publication date: March 21, 2019Inventors: Hyo June KIM, Chi Ho KIM, Sang Hoon CHO, Eung Rim HWANG
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Patent number: 9520186Abstract: A semiconductor memory may include: a first stacked structure including a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line; and a second stacked structure including a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line; and a first selecting element layer interposed between the first bit line and the second bit line.Type: GrantFiled: February 7, 2014Date of Patent: December 13, 2016Assignee: SK HYNIX INC.Inventors: Hyo-June Kim, Ja-Chun Ku, Sung-Kyu Min, Seung-Beom Baek, Byung-Jick Cho, Won-Ki Ju, Hyun-Kyu Kim, Jong-Chul Lee
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Patent number: 9385311Abstract: A semiconductor device includes a first conductive layer, a second conductive layer spaced from the first conductive layer, a variable resistance layer interposed between the first and second conductive layers, and an impurity-doped layer provided over a side surface of the variable resistance layer. The variable resistance layer has a smaller width than the first and the second conductive layers.Type: GrantFiled: August 3, 2015Date of Patent: July 5, 2016Assignee: SK HYNIX INC.Inventors: Beom-Yong Kim, Kee-Jeung Lee, Wan-Gee Kim, Hyo-June Kim
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Publication number: 20150340608Abstract: A semiconductor device includes a first conductive layer, a second conductive layer spaced from the first conductive layer, a variable resistance layer interposed between the first and second conductive layers, and an impurity-doped layer provided over a side surface of the variable resistance layer. The variable resistance layer has a smaller width than the first and the second conductive layers.Type: ApplicationFiled: August 3, 2015Publication date: November 26, 2015Inventors: Beom-Yong KIM, Kee-Jeung LEE, Wan-Gee KIM, Hyo-June KIM
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Patent number: 9130153Abstract: A semiconductor device includes a first conductive layer, a second conductive layer spaced from the first conductive layer, a variable resistance layer interposed between the first and second conductive layers, and an impurity-doped layer provided over a side surface of the variable resistance layer. The variable resistance layer has a smaller width than the first and the second conductive layers.Type: GrantFiled: July 19, 2013Date of Patent: September 8, 2015Assignee: SK HYNIX INC.Inventors: Beom-Yong Kim, Kee-Jeung Lee, Wan-Gee Kim, Hyo-June Kim
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Patent number: 9105840Abstract: According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, and contacted with one side surface and the other side surface of the variable resistance pattern, respectively, wherein the first stacked structure has a line shape extended in a first direction and the second stacked structure has a pillar shape; and a pillar-shaped conductive pattern contacted with one side surface of the second stacked structure, which is not contacted with the variable resistance pattern.Type: GrantFiled: March 6, 2014Date of Patent: August 11, 2015Assignee: SK HYNIX INC.Inventors: Jong-Chul Lee, Ja-Chun Ku, Sung-Kyu Min, Byung-Jick Cho, Seung-Beom Baek, Hyo-June Kim, Won-Ki Ju, Hyun-Kyu Kim
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Publication number: 20150089087Abstract: A semiconductor memory may include: a first stacked structure including a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line; and a second stacked structure including a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line; and a first selecting element layer interposed between the first bit line and the second bit line.Type: ApplicationFiled: February 7, 2014Publication date: March 26, 2015Applicant: SK HYNIX INC.Inventors: Hyo-June KIM, Ja-Chun KU, Sung-Kyu MIN, Seung-Beom BAEK, Byung-Jick CHO, Won-Ki JU, Hyun-Kyu KIM, Jong-Chul LEE
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Publication number: 20150085559Abstract: According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, and contacted with one side surface and the other side surface of the variable resistance pattern, respectively, wherein the first stacked structure has a line shape extended in a first direction and the second stacked structure has a pillar shape; and a pillar-shaped conductive pattern contacted with one side surface of the second stacked structure, which is not contacted with the variable resistance pattern.Type: ApplicationFiled: March 6, 2014Publication date: March 26, 2015Applicant: SK HYNIX INC.Inventors: Jong-Chul LEE, Ja-Chun KU, Sung-Kyu MIN, Byung-Jick CHO, Seung-Beom BAEK, Hyo-June KIM, Won-Ki JU, Hyun-Kyu KIM