Patents by Inventor Hyong Sik Won
Hyong Sik Won has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8686626Abstract: There are provided an oxynitride-based phosphor and a light emitting device including the same. The oxynitride-based phosphor has a rare-earth element dissolved in a host material represented by a general formula: Ca15Si20O10N30. The rare-earth element is at least one selected from a group consisting of manganese (Mn), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), dysprosium (Dy), terbium (Tb), holmium (Ho), erbium (Er), thulium (Tm) and ytterbium (Yb). The host material has a crystal lattice according to a peak of an X-ray powder diffraction pattern, and the crystal lattice has a cubic crystal structure.Type: GrantFiled: December 7, 2012Date of Patent: April 1, 2014Assignees: Samsung Electronics Co., Ltd., Industry-Academy Cooperation Corps of Sunchon National UniversityInventors: Hyong Sik Won, Kee Sun Sohn, Un Bae Park
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Publication number: 20140048742Abstract: The fluorescent substance according to one embodiment of the present invention has the following compositional formula (1): [Compositional formula 1] SrySi(6?z)AlzOzN(8?z):Rex. Here, x, y and z are respectively 0.005?x?0.05, 0.05?y?0.5, 0.001?z?0.50, and Re is a rare earth element. As a result, the fluorescent substance according to one embodiment of the present invention can exhibit a short wavelength of between 525 nm and 537 nm when the concentration of strontium is between 0.05 moles and 0.5 moles. Also, the fluorescent substance can exhibit a short wavelength of between 525 nm and 537 nm by the addition of barium in a range of between 0.003 moles and 0.125 moles when the concentration of aluminium is high. Also, the fluorescent substance can exhibit a short wavelength of between 525 nm and 537 nm by adjusting the oxygen concentration by the addition not only of AlN but also of Al2O3 as an aluminium precursor when the concentration of aluminium is high.Type: ApplicationFiled: February 6, 2012Publication date: February 20, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyong Sik Won, Seong Min Kim, Chan Suk Min, Chul Soo Yoon
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Patent number: 8652357Abstract: Disclosed are a phosphor, a method for preparing and using the same, a light emitting device package, a surface light source apparatus, a lighting apparatus using the phosphor, and a display apparatus. The phosphor includes an inorganic compound represented by an empirical formula (Sr, M)2SiO4-xNy:Eu, where M is a metallic element, 0<x<4, and y=2x/3.Type: GrantFiled: October 22, 2010Date of Patent: February 18, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong Ho Ryu, Chul Soo Yoon, Hyong Sik Won
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Publication number: 20140008680Abstract: A method for producing a sialon phosphor is provided. The method includes mixing a silicon precursor and an aluminum precursor and sintering the mixture to form a first sintered body. The first sintered body and a precursor for an active material are mixed and the mixture is heat-treated to form a second sintered body. That is, the exemplary method for producing a sialon phosphor involves firstly forming the first sintered body serving as a host material to stably ensure a crystal structure, and then mixing the active material and the first sintered body so as to preserve the role of the active material without sacrificing the crystal structure of the first sintered body.Type: ApplicationFiled: September 19, 2011Publication date: January 9, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyong Sik Won, Chul Soo Yoon, Youn Gon Park, Chang Bun Yoon
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Patent number: 8592235Abstract: A method for preparing a phosphor includes: dissolving at least one metal as a raw material of a desired phosphor in liquid ammonia to form a metal-amide type precursor; gathering the metal-amide type precursor; and firing the precursor to form a desired phosphor.Type: GrantFiled: December 2, 2011Date of Patent: November 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Youn Gon Park, Chul Soo Yoon, Won Young Song, Sang Hyun Kim, Hyong Sik Won
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Publication number: 20130256597Abstract: According to one embodiment of the present invention, a phosphor has the following composition formula (1): [composition formula 1] Si(6-z)AlzOyN(8-z):Rex, where x, y and z are 0.018?x?0.3, 0.3?y?0.75, 0.42?z?1.0, respectively, and Re is a rare earth element. Therefore, even when the aluminum concentration is 0.42 mol to 1.0 mol, a sialon phosphor of the present invention exhibits high luminance and has a particle size D50 varying between 5 to 20 ?m. In addition, a method for preparing a phosphor according to one embodiment of the present invention involves adjusting the oxygen concentration to ensure the superior crystallinity of the phosphor and thus improve the luminance thereof.Type: ApplicationFiled: September 20, 2011Publication date: October 3, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seong Min Kim, Hyong Sik Won, Chan Suk Min, Chul Soo Yoon, Youn Gon Park
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Publication number: 20120306356Abstract: There is provided a phosphor having a ?-type Si3N4 crystal structure including oxynitride expressed by an empirical formula Si6-zAlzOzN8-z:Eua,Mb, M being at least one selected from among strontium (Sr) and barium (Ba), an amount (a) of europium (Eu) ranging from 0.1 to 5 mol %, an amount (b) of M ranging from 0.1 to 10 mol %, and a composition rate (z) of aluminum (Al) satisfying 0.1<z<1, and the phosphor emitting light having a peak wavelength ranging from 500 to 550 nm when excitation light is irradiated thereto.Type: ApplicationFiled: February 11, 2011Publication date: December 6, 2012Inventors: Chang Bun Yoon, Hyong Sik Won, Chul Soo Yoon
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Publication number: 20120138992Abstract: A method for preparing a phosphor includes: dissolving at least one metal as a raw material of a desired phosphor in liquid ammonia to form a metal-amide type precursor; gathering the metal-amide type precursor; and firing the precursor to form a desired phosphor.Type: ApplicationFiled: December 2, 2011Publication date: June 7, 2012Inventors: Youn Gon PARK, Chul Soo Yoon, Won Young Song, Sang Hyun Kim, Hyong Sik Won
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Patent number: 8158026Abstract: There is provided a method for preparing a ?-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a ?-SiAlON phosphor represented by Formula: Si(6?x)AlxOyN(6?y):Lnz (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0<x?4.2, 0<y?4.2, and 0<z?1.0) includes: mixing starting materials to prepare a raw material mixture; and heating the raw material mixture in a nitrogen-containing atmospheric gas, wherein the starting materials includes a host raw material including a silicon raw material including metallic silicon, and at least one aluminum raw material selected from the group consisting of metallic aluminum and aluminum compound, and at least activator raw material selected from the rare earth elements for activating the host raw material.Type: GrantFiled: May 21, 2009Date of Patent: April 17, 2012Assignee: Samsung LED Co., Ltd.Inventors: Hideo Suzuki, Chul Soo Yoon, Hyong Sik Won, Jeong Ho Ryu, Youn Gon Park, Sang Hyun Kim
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Publication number: 20110248303Abstract: There is provided a method for preparing a ?-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a ?-SiAlON phosphor represented by Formula: Si(6-x)AlxOyN(8-y):Lnz (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0<x?4.2, 0<y?4.2, and 0<z?1.0) includes: mixing starting materials to prepare a raw material mixture; and heating the raw material mixture in a nitrogen-containing atmospheric gas, wherein the starting materials includes a host raw material including a silicon raw material including metallic silicon, and at least one aluminum raw material selected from the group consisting of metallic aluminum and aluminum compound, and at least activator raw material selected from the rare earth elements for activating the host raw material.Type: ApplicationFiled: August 12, 2009Publication date: October 13, 2011Inventors: Hideo Suzuki, Chul Soo Yoon, Hyong Sik Won, Jeong Ho Ryu, Youn Gon Park, Sang Hyun Kim
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Publication number: 20110096560Abstract: Disclosed are a phosphor, a method for preparing and using the same, a light emitting device package, a surface light source apparatus, a lighting apparatus using the phosphor, and a display apparatus. The phosphor includes an inorganic compound represented by an empirical formula (Sr, M)2SiO4-xNy:Eu, where M is a metallic element, 0<x<4, and y=2x/3.Type: ApplicationFiled: October 22, 2010Publication date: April 28, 2011Inventors: Jeong Ho Ryu, Chul Soo Yoon, Hyong Sik Won
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Patent number: 7781155Abstract: A method of fabricating a micro lens, the method including: forming a photo-sensitive film on a substrate; placing a photo mask at a predetermined distance from a top of the photo-sensitive film; exposing the photo-sensitive film by varying an area of exposure of the photo-sensitive film so as to selectively expose three-dimensional structures of the photo-sensitive film corresponding to desired micro lenses; and developing the photo-sensitive film such that the exposed three-dimensional structures remain. Also, there is provided a method of fabricating a master for a micro lens, in which a master material is applied on the photo-sensitive film with the three-dimensional structures to form a master having the three-dimensional structures transferred thereonto.Type: GrantFiled: December 28, 2007Date of Patent: August 24, 2010Inventors: Hyong Sik Won, Jong Myeon Lee, Myung Whun Chang
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Patent number: 7706653Abstract: Provided is an optical waveguide device including: a core having a stacked structure of at least three layers in which first thin films having a finite width and thickness and formed of a material having a relatively high electric conductivity and a second thin film having the same width as the first thin films and formed of a material having a lower conductivity than the material forming the first thin films are stacked in sequence, the first thin films being disposed in a first layer and an uppermost layer and adjacent to each other for interaction of surface plasmons; and a clad disposed around the core and formed of a material having a lower conductivity than the material forming the first thin films and a higher refractive index than the material forming the second thin film.Type: GrantFiled: September 18, 2007Date of Patent: April 27, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Suntak Park, Seok Ho Song, Hyong Sik Won, Myung-Hyun Lee, Jung Jin Ju, Min-Su Kim, Jin Tae Kim, Seung Koo Park
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Publication number: 20100038590Abstract: There is provided a method for preparing a ?-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a ?-SiAlON phosphor represented by Formula: Si(6-x)AlxOyN(6-y):Lnz (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0<x?4.2, 0<y?4.2, and 0<z?1.0) includes: mixing starting materials to prepare a raw material mixture; and heating the raw material mixture in a nitrogen-containing atmospheric gas, wherein the starting materials includes a host raw material including a silicon raw material including metallic silicon, and at least one aluminum raw material selected from the group consisting of metallic aluminum and aluminum compound, and at least activator raw material selected from the rare earth elements for activating the host raw material.Type: ApplicationFiled: May 21, 2009Publication date: February 18, 2010Inventors: Hideo Suzuki, Chul Soo Yoon, Hyong Sik Won, Jeong Ho Ryu, Youn Gon Park, Sang Hyun Kim
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Publication number: 20080224160Abstract: Provided is a method of manufacturing a high-power LED package, the method including the steps of: preparing a mold having an irregularity pattern; providing a transparent resin solid having an irregularity pattern provided on the surface thereof by using the mold; preparing an irregularity film with the irregularity pattern by cutting a portion of the transparent resin solid; preparing an LED package structure having a cavity in which an LED chip is mounted; filling transparent liquid resin into the cavity having the LED chip mounted therein; mounting the irregularity film on the transparent liquid resin such that the irregularity film projects from the cavity at a predetermined height; and curing the transparent liquid resin having the irregularity film mounted thereon. The irregularity pattern of the irregularity film projects from the cavity at a predetermined height.Type: ApplicationFiled: December 21, 2007Publication date: September 18, 2008Inventors: Myung Whun Chang, Jong Myeon Lee, Hyong Sik Won, Youn Gon Park
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Publication number: 20080206682Abstract: A method of fabricating a micro lens, the method including: forming a photo-sensitive film on a substrate; placing a photo mask at a predetermined distance from a top of the photo-sensitive film; exposing the photo-sensitive film by varying an area of exposure of the photo-sensitive film so as to selectively expose three-dimensional structures of the photo-sensitive film corresponding to desired micro lenses; and developing the photo-sensitive film such that the exposed three-dimensional structures remain. Also, there is provided a method of fabricating a master for a micro lens, in which a master material is applied on the photo-sensitive film with the three-dimensional structures to form a master having the three-dimensional structures transferred thereonto.Type: ApplicationFiled: December 28, 2007Publication date: August 28, 2008Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Hyong Sik Won, Jong Myeon Lee, Myung Whun Chang
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Publication number: 20080080824Abstract: Provided is an optical waveguide device including: a core having a stacked structure of at least three layers in which first thin films having a finite width and thickness and formed of a material having a relatively high electric conductivity and a second thin film having the same width as the first thin films and formed of a material having a lower conductivity than the material forming the first thin films are stacked in sequence, the first thin films being disposed in a first layer and an uppermost layer and adjacent to each other for interaction of surface plasmons; and a clad disposed around the core and formed of a material having a lower conductivity than the material forming the first thin films and a higher refractive index than the material forming the second thin film.Type: ApplicationFiled: September 18, 2007Publication date: April 3, 2008Applicant: Electronics and Telecommunications Research InstituteInventors: Suntak Park, Seok Ho Song, Hyong Sik Won, Myung-Hyun Lee, Jung Jin Ju, Min-su Kim, Jin Tae Kim, Seung Koo Park