Abstract: A defect inspecting apparatus includes a reference image generator configured to generate a first reference image and a second reference image from design layout data. An image inspector is configured to obtain a first inspection image of a first inspection region of a photomask and a second inspection image of a second inspection region of the photomask. An operation processor is configured to extract a first coordinate offset by comparing the first inspection image with the first reference image and to extract a second coordinate offset by comparing the second inspection image with the second reference image.

Abstract: A defect inspecting apparatus includes a reference image generator configured to generate a first reference image and a second reference image from design layout data. An image inspector is configured to obtain a first inspection image of a first inspection region of a photomask and a second inspection image of a second inspection region of the photomask. An operation processor is configured to extract a first coordinate offset by comparing the first inspection image with the first reference image and to extract a second coordinate offset by comparing the second inspection image with the second reference image.

Abstract: A defect inspecting apparatus includes a reference image generator configured to generate a first reference image and a second reference image from design layout data. An image inspector is configured to obtain a first inspection image of a first inspection region of a photomask and a second inspection image of a second inspection region of the photomask. An operation processor is configured to extract a first coordinate offset by comparing the first inspection image with the first reference image and to extract a second coordinate offset by comparing the second inspection image with the second reference image.

Abstract: Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.

Abstract: Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.

Abstract: Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.

Abstract: In a method of detecting a defect, a region of a substrate may be primarily scanned using a first electron beam to detect a first defect. A remaining region of the substrate, which may be defined by excluding a portion in which the first defect may be positioned from the region of the substrate, may be secondarily scanned using a second electron beam to detect a second defect. Thus, the portion with the defect may not be scanned in a following scan process so that a scanning time may be remarkably decreased.

Abstract: A defect inspecting apparatus includes a reference image generator configured to generate a first reference image and a second reference image from design layout data. An image inspector is configured to obtain a first inspection image of a first inspection region of a photomask and a second inspection image of a second inspection region of the photomask. An operation processor is configured to extract a first coordinate offset by comparing the first inspection image with the first reference image and to extract a second coordinate offset by comparing the second inspection image with the second reference image.

Abstract: A defect inspecting apparatus includes a reference image generator configured to generate a first reference image and a second reference image from design layout data. An image inspector is configured to obtain a first inspection image of a first inspection region of a photomask and a second inspection image of a second inspection region of the photomask. An operation processor is configured to extract a first coordinate offset by comparing the first inspection image with the first reference image and to extract a second coordinate offset by comparing the second inspection image with the second reference image.

Abstract: Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.

Abstract: In a method of detecting a defect, a region of a substrate may be primarily scanned using a first electron beam to detect a first defect. A remaining region of the substrate, which may be defined by excluding a portion in which the first defect may be positioned from the region of the substrate, may be secondarily scanned using a second electron beam to detect a second defect. Thus, the portion with the defect may not be scanned in a following scan process so that a scanning time may be remarkably decreased.

Abstract: A defect inspecting apparatus includes a reference image generator configured to generate a first reference image and a second reference image from design layout data. An image inspector is configured to obtain a first inspection image of a first inspection region of a photomask and a second inspection image of a second inspection region of the photomask. An operation processor is configured to extract a first coordinate offset by comparing the first inspection image with the first reference image and to extract a second coordinate offset by comparing the second inspection image with the second reference image.