Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.

Abstract: A layout check method includes generating a layout shell structure by preprocessing a full-chip layout, generating a process condition model by preprocessing at least one process condition, extracting a stress simulation value of the layout shell structure by performing a stress simulation based on the layout shell structure and on the process condition model, and extracting statistics data based on the stress simulation value of the layout shell structure, wherein the layout shell structure and the process condition model are configured to have a dimension which is greater than two dimensions and less than three dimensions.

Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.

Abstract: A memory device includes a plurality of first conductive lines on a substrate and extending in a first direction, a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction intersecting the first direction, and a plurality of memory cells respectively between the plurality of first conductive lines and the plurality of second conductive lines. Each of the plurality of memory cells includes a switching element and a variable resistance material layer. The switching element includes a material having a composition of [GeX PY SeZ](1-W) [O]W, where 0.15?X?0.50, 0.15?Y?0.50, 0.35?Z?0.70, and 0.01?W?0.10.

Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.

Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.

Abstract: A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.

Abstract: An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.

Abstract: An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.

Abstract: A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.