Patents by Inventor Hyoung Gi Kim

Hyoung Gi Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photoresist cross-linker and photoresist composition comprising the same
    Patent number: 6482565
    Abstract: The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride.
    Type: Grant
    Filed: November 24, 1999
    Date of Patent: November 19, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Keun Kyu Kong, Myoung Soo Kim, Hyoung Gi Kim, Hyeong Soo Kim, Ki Ho Baik
  • Process for forming a photoresist pattern improving resistance to post exposure delay effect
    Patent number: 6403287
    Abstract: The present invention relates to a process for forming a photoresist pattern which improves its resistance to the harmful effects of post exposure delay. More specifically, it relates to an improved process for forming a photoresist pattern comprising the steps of (a) coating a photoresist composition on a wafer, (b) exposing the coated wafer to patterned light by employing an exposer, and (c) developing the exposed wafer, wherein the improvement comprises raising the temperature of the photoresist to above room temperature when it is coated on the wafer.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: June 11, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Jin Soo Kim, Hyoung Gi Kim
  • Photoresist cross-linker and photoresist composition comprising the same
    Patent number: 6399792
    Abstract: The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. wherein X1, X2, R, R′, R″, R1, R2, p, q and s are those defined herein. Such cross-linkers are suitable for use in photolithography processes employing KrF(248 nm), ArF(193 nm), E-beam, ion-beam or EUV light sources.
    Type: Grant
    Filed: September 11, 2001
    Date of Patent: June 4, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Keun Kyu Kong, Jae Chang Jung, Myoung Soo Kim, Hyoung Gi Kim, Hyeong Soo Kim, Ki Ho Baik
  • Photoresist cross-linker and photoresist composition comprising the same
    Patent number: 6368773
    Abstract: The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride.
    Type: Grant
    Filed: November 24, 1999
    Date of Patent: April 9, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Keun Kyu Kong, Myoung Soo Kim, Hyoung Gi Kim, Hyeong Soo Kim, Ki Ho Baik, Jin Soo Kim
  • Novel photoresist cross-linker and photoresist composition comprising the same
    Publication number: 20020019560
    Abstract: The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources.
    Type: Application
    Filed: September 11, 2001
    Publication date: February 14, 2002
    Inventors: Keun Kyu Kong, Jae Chang Jung, Myoung Soo Kim, Hyoung Gi Kim, Hyeong Soo Kim, Ki Ho Baik
  • Photoresist cross-linker and photoresist composition comprising the same
    Patent number: 6312868
    Abstract: The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources.
    Type: Grant
    Filed: February 9, 2000
    Date of Patent: November 6, 2001
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Keun Kyu Kong, Jae Chang Jung, Myoung Soo Kim, Hyoung Gi Kim, Hyeong Soo Kim, Ki Ho Baik