Abstract: The inventive concept provides a substrate support unit. The substrate support unit includes a susceptor supporting the substrate and having a pinhole formed vertically; and a lift pin unit configured to load and unload the substrate on the susceptor, and wherein the lift pin unit includes: a lift pin vertically movable along the pinhole; a support vertically movable by a driving unit; a pin holder connecting the support and the lift pin, and wherein the lift pin is pivotably connected to the pin holder and the pin holder is laterally movable with respect to the support.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space; a separation unit provided at the inner space and configured to be combined with the chamber to divide the inner space into a plurality of treating spaces and a transfer space; a plurality of support units provided at each of the plurality of treating spaces and configured to support a substrate; a plurality of gas supply units provided at each of the plurality of treating spaces and configured to supply a process gas to the substrate supported on the plurality of support units; and a transfer unit provided at the transfer space and configured to transfer the substrate between the plurality of treating spaces.

Abstract: A gas supplying unit of a substrate treating apparatus is proposed. The gas supplying unit includes: a gas distribution plate having a first surface and a second surface opposite the first surface, and having first gas supply holes formed through the first surface and the second surface; a shower head having a third surface being in close contact with the second surface and a fourth surface opposite the third surface, and having second gas supply holes formed through the third surface and the fourth surface to be connected to the first gas supply holes; and heat transfer members having first ends inserted in at least one of the gas distribution plate and the shower head and second ends being in contact with any one of the shower head and the gas distribution plate.

Abstract: A gas distribution assembly provided in an apparatus for treating a substrate with plasma to distribute gas includes a gas distribution plate formed with a plurality of gas introduction holes for diffusing gas supplied from the gas supply unit; a shower head plate disposed at the upper portion or lower portion of the gas distribution plate to be in contact with the gas distribution plate and having a plurality of gas supply holes formed at positions communicating with the gas introduction holes to penetrate through the upper surface and the lower surface; and a fastening member provided at a side surface in contact with the gas distribution plate and the shower head plate and including a first coupling portion coupled to the gas distribution plate and a second coupling portion supporting the lower surface of the shower head plate to contact the gas distribution plate and the shower head plate.

Abstract: A gas supplying unit of a substrate treating apparatus is proposed. The gas supplying unit includes: a gas distribution plate having a first surface and a second surface opposite the first surface, and having first gas supply holes formed through the first surface and the second surface; a shower head having a third surface being in close contact with the second surface and a fourth surface opposite the third surface, and having second gas supply holes formed through the third surface and the fourth surface to be connected to the first gas supply holes; and heat transfer members having first ends inserted in at least one of the gas distribution plate and the shower head and second ends being in contact with any one of the shower head and the gas distribution plate.

Abstract: A process chamber is provided for an etching apparatus that etches a substrate, such as a liquid crystal display (LCD) substrate, using plasma. The process chamber may include a chamber body, in one wall of which a gate slit is formed, a rotary inner door that opens and closes an inner opening of the gate slit, and a door driving mechanism that rotates the inner door. When the substrate is etched, the inner door is closed preventing an interior of the chamber body from communicating with the gate slit. Thereby, a space in which the plasma is formed may be maintained symmetrical, so that the plasma may be uniformly distributed in an interior of the chamber body.

Abstract: An electrode member for generating plasma includes an electrode plate and a cooling unit having a plurality of thermoelectric modules that are thermally in contact with the electrode plate. The thermoelectric modules may regulate the temperature of the electrode plate based on the Peltier effect.

Abstract: Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and an upper cover. The upper cover is configured to be easily opened away from and closed to the chamber body.

Abstract: Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and an upper cover. The upper cover is configured to be easily opened away from and closed to the chamber body.

Abstract: Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and an upper cover. The upper cover is configured to be easily opened away from and closed to the chamber body.

Abstract: Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and an upper cover. The upper cover is configured to be easily opened away from and closed to the chamber body.

Abstract: A lift pin driving device and a flat panel display (FPD) manufacturing apparatus having the device are provided. The lift pin driving device can precisely move a plurality of lift pins using one motor, thus realizing a simple lift pin driving structure and a simple motor control structure. This allows a space below a chamber body of the manufacturing apparatus to be configured in a variety of ways, thus reducing the cost of equipment and the production cost of products.

Abstract: An apparatus and method for measuring a chuck attachment force are provided. The apparatus is capable of measuring loads applied to a measurement substrate, while the measurement substrate is detached from a chuck, and precisely calculating necessary force through a process of comparing and analyzing values of the measured loads. This may prevent errors in the application of attachment force during a semiconductor manufacturing process. In the semiconductor manufacturing process, when the substrate is detached from a chuck, the substrate may be prevented from being deformed or cracked.

Abstract: Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and an upper cover. The upper cover is configured to be easily opened away from and closed to the chamber body.

Abstract: Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and an upper cover. The upper cover is configured to be easily opened away from and closed to the chamber body.

Abstract: Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and an upper cover. The upper cover is configured to be easily opened away from and closed to the chamber body.

Abstract: Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and an upper cover. The upper cover is configured to be easily opened away from and closed to the chamber body.

Abstract: An apparatus is provided that forms embossed portions on a workpiece. The apparatus includes a melting chamber filled with melt, such as ceramic, nozzles provided at a lower portion of the melting chamber, and presses provided adjacent to each of the injection nozzles. The injection nozzles drop the melt on the workpiece and the presses press the dropped melt into a predetermined shape of the embossed portions in a state where the dropped melt is being solidified after being dropped on the workpiece.

Abstract: An apparatus and method for measuring a chuck attachment force are provided. The apparatus is capable of measuring loads applied to a measurement substrate, while the measurement substrate is detached from a chuck, and precisely calculating necessary force through a process of comparing and analyzing values of the measured loads. This may prevent errors in the application of attachment force during a semiconductor manufacturing process. In the semiconductor manufacturing process, when the substrate is detached from a chuck, the substrate may be prevented from being deformed or cracked.

Abstract: An electrode member for generating plasma includes an electrode plate and a cooling unit having a plurality of thermoelectric modules that are thermally in contact with the electrode plate. The thermoelectric modules may regulate the temperature of the electrode plate based on the Peltier effect.